NE4203B-20
Abstract: NE3005B-20 NTM2222A NTM3904 ntm3906 M181H M194H NE3001B-20 NE3003B-20 NE4201B-20
Contextual Info: - 316 - W ckÏÏtë m & HQ1A3M HQ1A4A HQ1F2Q HQ1F3M HQ1F3P HQ1L2N HQ1L2Q HQ2A4A HR1A3M HR1A4A HR1A4M HR1F2Q HR1F3P HR1L2Q HR1L3N M181H M194H NE3001B—20 NE3003B-20 NE3005B—20 NE4201B-2Û NE4203B-20 NE64700 NE64800 NEL2301 NEL2302 NEL2303 NEM1706B—20 NEM1712B-20
|
OCR Scan
|
h82a4apu1619pu1620pu3210+16pu3110pu3211pu3111pu3212pu3112pu3213ne4203b-20ne3005b-20ntm2222antm3904ntm3906m181hm194hne3001b-20ne3003b-20ne4201b-20
|
PDF
|
transistor k 265
Abstract: NE64700
Contextual Info: K-BAND BIPOLAR OSCILLATOR TRANSISTOR NE64700 OUTLINE DIMENSIONS Units in jun FEATURES_ • FUNDAMENTAL OSCILLATION GREATER NE64700 (CHIP) THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER MIL-SPEC TEMP RANGES Bonding Area ELECTRICAL CHARACTERISTICS ( t a - 25-cj
|
OCR Scan
|
ne6470025-cjis12s21itransistor k 265 |
PDF
|
NE64700
Abstract: 10 ghz transistor chip die npn transistor transistor 20 dB 14 ghz
Contextual Info: NE64700 NPN SILICON MICROWAVE TRANSISTOR DESCRIPTION: PACKAGE STYLE: CHIP 0.0007 Inch Gold Wire CHIP The ASI NE64700 is a bipolar transistor Designed for low noise applications at VHF, UFH and microwave frequencies up to 12 GHz. EMITTER • PG = 18.1 dB Typical @ 1.0 GHz
|
Original
|
ne6470010 ghz transistorchip die npn transistortransistor 20 db 14 ghz |
PDF
|
SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
|
OCR Scan
|
an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
|
PDF
|
NE3005B-20
Abstract: M194H NE3005B20 NEM2010B-20 NEM2310B-20 15NO3 HQ2A4A M181H NE3001B-20 NE4201B-20
Contextual Info: - 316 - m & HQ1A3M HQ1A4A HQ1F2Q HQ1F3M HQ1F3P HQ1L2N HQ1L2Q HQ2A4A HR1A3M HR1A4A HR1A4M HR1F2Q ft n Bn a Bn Bn sn Bn sn un sn a n Bn Bn NE3005B—20 am a B is fö T 8T F Hm a* BB NE4201B-2Û U M HR1F3P HR1L2Q HR1L3N M181H M194H NE3001B—20 NE3003B-20 NE4203B-20
|
OCR Scan
|
h82a4a32dbm27dbmnel2302+1534dbm30dbmnel230338dbm65ghzne3005b-20m194hne3005b20nem2010b-20nem2310b-2015no3hq2a4am181hne3001b-20ne4201b-20
|
PDF
|
73412
Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7
|
OCR Scan
|
ne46134ne85634ne46734ne85619+11ne6811973412ne64535chip transistor 348fvh 38p08cne68039ne889ne02135ne64500ne24318
|
PDF
|