MSM511002 Search Results

Contextual Info: O K I Semiconductor MSM511002B 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I semiconductor MSM511002A 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION T h e M S M 5 1 10 0 2 A is a new generation dynam ic R A M organized as 1 ,0 4 8 ,5 7 6 w ords x 1 bit. T h e technology used to fabricate the M S M 5 1 10 0 2 A is O K I's C M O S silicon g ate process technology.

Contextual Info: O K I semiconductor MSM511002B 1,048,576-Word x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The

TRANSISTOR AH-10

Abstract: MSM511002A-70
Contextual Info: 5ÔE D • b?242MÜ D0127fl3 113 H O K I J O K I O K I M S M s e m SEMI CONDUCTOR ic o n d u c t o r ÊROUP ~ T * ' ~ U - 2 3 - i 5 ' 5 1 1 0 0 2 A _ 1,048,576-WORD X 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511002A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The

T-46-23-15

Abstract: ah rzj IMSM511002AI MSM511002A-1A oki msm
Contextual Info: 4bE ]> w • b72454Q 000^534 RTS « O K I J O K I O K I SEMICONDU CT OR GROUP semiconductor_ M SM 511002A _ 1,048,576-WORD x 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511002A is a new generation dynam ic RAM organized as 1,048,576 w ords by 1 bit. The

511002A

Contextual Info: O K I semiconductor MSM511002A_ 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511002A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM511002A is OKI's CMOS silicon gate process technology.

ah rzj

Abstract: MSM511002-10 MSM511002-12
Contextual Info: O K I d SEMICONDUCTOR B d s e GR O U P 10E D | b ? 2 M B LlO □ □□Mlfl'i fl | m i c o n d u c t o r - - r - y fc - a a - MSM511002RS/JS/ZS . 1,048,576-W ORD X 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM 511002 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The

13005 TRANSISTOR

Abstract: transistor 13005 CIRCUIT 18-PIN 26-PIN ZIP20-P-400
Contextual Info: O K I Semiconductor MSM511002 B_ 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I semiconductor MSM511002B 1,048,576-W ord x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The M SM 511002B is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM511002B is OKI's CM OS silicon gate process technology. The

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

MN12261

Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Contextual Info: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating

24 pin 16mbit DRAM

Abstract: MSM5116100A MSM6688 MSM6788 MSM6791 sad a4 a5 gnd 05 we331
Contextual Info: ¡ Semiconductor MSM6791 MSM6791 ¡ Semiconductor DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solid-state recording and playback ICs MSM6688 and MSM6788 . FEATURES • DRAM (¥ 1-bit configuration)

Contextual Info: O K I Semiconductor MSM6791 DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solidstate recording and playback ICs MSM6688 and MSM6789A . FEATURES • DRAM (x 1-bit configuration) lM-bit DRAM (MSM511000A, MSM511001A): 8 pcs. can be connected.

511000

Abstract: MT401024 511000 cmos 18PIN MN41C1002L-8 MN41C1002SJ-8 MT4C1024 511000 18pin
Contextual Info: - 206 IM CMOS x i m ft t t ft CC D y n a m i c -, + > y w R A M 1 0 4 8 5 7 6 X 1 ) 1 8 P I N tt X fi TRWC min (ns) V D D or V C C (ns) TDH min (ns) TRAC max (ns) TRCY min (ns) TCAU min (ns) TAH min (ns) TP mi ) (ns) TWCY (VS IDD max (ibA) I DD STANDBY ( I SB/ I SB2)

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258