B7E424 Search Results

ODE28

Contextual Info: SÔE D O f t . i • b7E424G GD14712 446 « O K I J b e m i c o n d u c t o r MSC7125-XX O K I T - S 2 . - 1S-Æ 9 SEMICONDUCTOR GROUP 5 x 7 DOT MATRIX, 8 -DIGIT GENERAL DESCRIPTION The MSC7125-xx is a Bi-CMOS dot matrix display controller for vacuum fluorescent

SC-1149

Contextual Info: 5ÛE D • b7E4240 0014S3Ô ^ 2 H0KIJ O K I Semiconductor M S C 1 1 4 9 -X X O K I -s z -\ s - 9 SEMICONDUCTOR 6R0UP 33-BIT SEGMENT DRIVER GENERAL DESCRIPTION The M SC 1149-XX is a vacuum fluorescent display tube driver IC, which consists of a 34-bit shift register, a 33-bit latch circuit the

Contextual Info: 5ÔE D • b7E424D 0G1453Ô <^2 I IOKI J O K I Semiconductor M SC1149-XX O K I SEMICONDUCTOR GROUP 33-BIT SEGM ENT DRIVER GENERAL DESCRIPTION The MSC1149-XX is a vacuum fluorescent display tube driver IC, w hich consists of a 34-bit shift register, a 33-bit latch circuit the

Contextual Info: O K I Semiconductor MSM5 1 1 7 1 7 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117170 achieves high integration, high-speed operation, and low-power

optical switch 2x1

Abstract: cd photo diode ocm240 Photo MOS Relay OCM200 OCM201 OCM220 OCM221 OCM241 201 photo
Contextual Info: O K I electronic components OCM 2X 0, 2X1 SERIES Bidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM2XO and OCM2X1 Series are bidirectional AC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS

OCV CM 1092

Abstract: SP 1191 MSM6576
Contextual Info: O K I Semiconductor MSM6576-XX_ Operatable at 0.9V and 7-level Detector 4-Bit Microcontroller GENERAL DESCRIPTION M SM 6576 is a 4-bit, low -pow er m icrocontroller that is manufactured in a C M O S silicon-gate process. The m icrocontroller can be started and operated at a low supply voltage of 0.9 V.

Contextual Info: O K I Semiconductor MSC23832A-XXBS16/DS16 8,388,608-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23832A-xxBS16/DS16 is a fully decoded 8,388,608-word x 32-bit CMOS Dynamic Random Access M emory M odule com posed of sixteen 16-Mb DRAMs 4M x 4 in SOJ packages

MSM5116400C

Contextual Info: E 2 G 0 1 06-18-42 V $ \ O K I S e m ic o n d u c to r ^ve^on^.i*«^ M SM 5 1 1 6 4 0 0 C_ 4,194,304-W ord x 4 -B it D Y N A M IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

active suspension

Abstract: m56v16 m56v1640010
Contextual Info: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-w ord x 4-bit synchronous dynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

MSM538021C

Abstract: MSM538031C
Contextual Info: O K I Semiconductor MSM538031C 1,048,576-Word x 8-Bit Low-Voltage Mask ROM DESCRIPTION ^ 3 }' i8h"Speed f iC° n §ate CM OS M ask ROM with 1'048,576-word x 8-bit capac­ ity. The M SM 538031C operates on a smgle 3.0 V or 3.3 V power supply but offers the sam e fast access times

MSM531601D

Abstract: C18-19 HA20
Contextual Info: O K I Semiconductor MSM531601D 2,097,152-Word x 8-Bit Mask ROM DESCRIPTION The OKI M SM 531601D is a high-speed silicon gate CM OS Mask ROM with 2,097,152-word x 8-bit capac­ ity. The M SM 531601D operates on a single 5.0 V power supply and is TTL compatible. The chip's asyn­

MSM53V1655F

Abstract: TSOP70-P-400
Contextual Info: O K I Semiconductor MSM53V1655F_ 524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 4Double Words x 32-Bit or 8Words x 16-Bit/Page Mode MASKROM • DESCRIPTION The OKI MSM53V1655F is a 524,288-double words x 32-bit or 1,048,576-words x 16-bit

bi-directional switches FET

Abstract: til 431 ocm240 OCM200 OCM201 OCM220 OCM221 OCM241
Contextual Info: O K I electronic components OCM 2X 0, 2X1 SERIES Bidirectional Optical MOS Relay G EN ER A L D E S C R IP T IO N The OCM2XO and OCM2X1 Series are bidirectional AC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS

A5 GNC

Abstract: TSOP32-P-4QO-K 51V17400 5116100
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

Contextual Info: OKI Sem iconductor MSM5416273 P relim inary 262,144 -Word x 16 Bits Multiport DRAM_ Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and

MSM80C154HJS

Abstract: QFP44-P-910-V1K MSM80C154H p311t
Contextual Info: SflE D O M K S I M • ^724240 OOlMOfll 5 5 ^ B i O K I J S e m ic o n d u c t o r 8 C 1 5 4 t S E „ IC0NIUCT0R H _- t - h w - o t CMOS 8-Bit Single*Chip Microcontroller DESCRIPTION The MSM80C154H is a high performance 8-bit single-chip microcontroller implementing large inte­

Bv 42 transistor

Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

T462 transistor

Abstract: EZ613 transistor t462 MSM51C256 MSM51C256-10 MSM51C256-80 MSM51C256RS
Contextual Info: 4bE D rtTTT - • b 7 2 4 2 4 D O D D ' m û ô ITS H O K I J I O K I S E M I C O N D U C T O R GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 262,144 W O R D X1-BIT S D Y N A M IC R A M GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit.

MSM511665-10

Abstract: MSM511665-80
Contextual Info: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M SM511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the MSM511665 is OKI's CMOS silicon gate process technology.

MSM5117180-70

Abstract: MSM5117180-80
Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.

oki m6688

Abstract: M6688 SHARP IC 701 I X11 voice activated recorder circuit evo cn GP 502 op amp ua 743 VOICE REC playback VOICE RECORDER and playback IC MSM6595 MSM6688
Contextual Info: OKI Semiconductor MSM6688 ADPCM SOLID-STATE RECORDER LSI • GENERAL DESCRIPTION The M S M 6688 is a “solid-state-recorder” LSI developed using the ADPCM method. By externally connecting a m icrophone, a speaker, a speaker drive am plifier, and dedicated DRAM through the

m6376

Abstract: oki m6376 msm6376 J3E diode oki msm6376 oki voice synthesizer msm6375 diode i0-i6 7b424 oscV16 ADPCM SPEECH SYNTHESIZER LSIs
Contextual Info: O K I Semiconductor MSM6376_ A D P C M S P EE C H S Y N TH E S IZE R W ITH EXTERNAL R O M G ENER AL D ES C R IP TIO N MSM6376 is a tw o-channel m ixing ADPCM speech synthesizer LSI using u p to 16 M-bit external speech data storage, such as ROM,

Contextual Info: SâE D • b72M2MD 0 0 1 2 7 ^ 0 0 K I SEI 1I C0NPUCT0R 344 I0K IJ GROUP O K I semiconductor_ ' MSM514256A 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM514256A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256A is OKI’s CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM7503 Multi-Function PCM C O D E C GENERAL DESCRIPTION The MSM7503 is a high performance, low power CODEC LSI device integrating a 2-wire time division transmission ping-pong transmission interface function and has a basic function of