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    OKI Semiconductor MSM56V16160F-8

    DRAM Chip SDRAM 16Mbit 1Mx16 3.3V 50-Pin TSOP-II
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    Bristol Electronics MSM56V16160F-8 616
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    OKI Semiconductor M56V16160D-8

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    Bristol Electronics M56V16160D-8 14
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    OKI Semiconductor MSM56V16160F-8TS-K

    SYNCHRONOUS DRAM, 1MX16, 6NS, CMOS, PDSO50 (Also Known As: M56V16160F-8)
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    Quest Components () MSM56V16160F-8TS-K 41
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    MSM56V16160F-8TS-K 34
    • 1 $7.86
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    OKI Semiconductor MSM56V16800F-8ATS-K

    SYNCHRONOUS DRAM, 2MX8, 6NS, CMOS, PDSO44 (Also Known As: M56V16800F-8A)
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    Quest Components MSM56V16800F-8ATS-K 8
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    OKI Electric Industry Co Ltd M56V16160F8

    2-BANK X 524,288 WORD X 16 BIT SYNCHRONOUS DYNAMIC RAM Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50
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    ComSIT USA M56V16160F8 15
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    M56V16 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    active suspension

    Abstract: m56v16 m56v1640010
    Contextual Info: O K I Semiconductor M56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M56V16400 is a 2-bank x 2,097,152-w ord x 4-bit synchronous dynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		MSM56V16400_ 152-Word MSM56V16400 cycles/64 b7E424G DD2Q377 active suspension m56v16 m56v1640010 PDF

    KM48S8030BT-GL

    Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
    Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PC100 KM48S8030BT-GL nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832 PDF

    KM48S8030BT-GL

    Abstract: NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5
    Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PC100 KM48S8030BT-GL NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5 PDF