511002B Search Results

Contextual Info: O K I semiconductor 511002B 1,048,576-W ord x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The M SM 511002B is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the 511002B is OKI's CM OS silicon gate process technology. The

BFT 50 TH

Contextual Info: PRELIMINARY 1,048,576 WORD x 1 BIT DYNAMIC RAM DESCRIPTION T he 511002BP/BJ/BZ/BFT is th e new g en eratio n dynam ic RAM organized 1,048,576 words by 1 bit. T he 511002BP/BJ/BZ/BFT utilizes TO SH IB A ’S CMOS Silicon gate process technology a s w ell as

Contextual Info: O K I Semiconductor 511002B 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The 511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the 511002B is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I semiconductor 511002B 1,048,576-Word x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The 511002B is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the 511002B is OKI's CMOS silicon gate process technology. The

13005 TRANSISTOR

Abstract: transistor 13005 CIRCUIT 18-PIN 26-PIN ZIP20-P-400
Contextual Info: O K I Semiconductor MSM511002 B_ 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The 511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the 511002B is OKI's CMOS silicon gate process technology. The