242MG Search Results
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KEMET Corporation C1825C242MGGAC7210Multilayer Ceramic Capacitors MLCC - SMD/SMT 2000V 2400pF 0.2 |
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KEMET Corporation C1825C242MGGACAUTO7210Multilayer Ceramic Capacitors MLCC - SMD/SMT 2000V 2400pF 20% AEC-Q200 |
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KEMET Corporation C2220C242MGGAC7210Multilayer Ceramic Capacitors MLCC - SMD/SMT 2000V 2400pF 0.2 |
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KEMET Corporation C2220C242MGGACAUTO7210Multilayer Ceramic Capacitors MLCC - SMD/SMT 2000V 2400pF 20% AEC-Q200 |
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KEMET Corporation C2220C242MGTAC7210Multilayer Ceramic Capacitors MLCC - SMD/SMT 2000V 2.4nF X8G 2220 20% |
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242MG Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: O K I Semiconductor M SC23432A-XXBS8/PS8 4,194,304-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23432A-xxBS8/DS8 is a fully decoded 4,194,304-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 16-Mb DRAMs 4M x 4 in SOJ packages |
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msc23432a-xxbs8/ps8304-word32-bitmsc23432a-xxbs8/ds8+2 | |
DD13337Contextual Info: 5ÖE D • b 7 5 4 2 4 0 G G 1 3 3 3 b BbO « O K I J O K I S E M I C O N D U C T O R GROUP O K I semiconductor MSM27C256HZB -r-^/s-as" 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27C256HZB is a 32,768-word x 8-bit electrically programmable read-only memory. |
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msm27c256hzb768-wordmsm27g256hzb28-pin+4 | |
MSM5117180-70
Abstract: MSM5117180-80
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msm5117180576-word18-bitcycles/32ms+2 | |
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Contextual Info: O K I Semiconductor MSM511002B 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The |
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msm511002b576-wordb7242hge4240 | |
5424G
Abstract: oki Rotary Encoder switch TA22 OLD2210 OLD221Q QLD2210 910nm
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qld2210old2210old221qb7e42l+6 | |
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Contextual Info: O K I Semiconductor MSM51V17170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V17170is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI'sCMOS silicon gate technology. The MSM51V17170 achieves high integration, high-speed operation, and low-power |
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msm51v17170576-word16-bitthemsm51+2 | |
trw 1014Contextual Info: O K I Semiconductor MSM511665A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WRITE PER BIT DESCRIPTION The MSM511665A/ AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology. |
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msm511665a/al536-word16-bitmsm511665a/+3 | |
65P524
Abstract: SFT 352 0040H MSM65524 MSM65P524 TI OAE
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b72424d13tb7msm65524/65p524msm65524+8 | |
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Contextual Info: O K I Semiconductor MSC23108B/BL-XXDS2 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 23108B /B L -xxD S2 is a fully decoded 1,048,576-w ord x 8-bit CM O S D ynam ic Random Access Memory Module composed of two 4-Mb DRAM s in SOJ M SM 514400B/BL packages mounted |
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msc23108b/bl-xxds2576-wordmsc23108bmsm514400b/bl+1 | |
2454D
Abstract: 2DQ11 2M54G
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msm5117180576-word18-bitcycles/32ms+3 | |
600S8
Abstract: MSC23408C
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msc23408c-xxps8msc23408cl-xxps8304-wordmsc23408c/cl-xxds8+4 | |
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Contextual Info: 4bE D • b ? 2 4 2 4 0 OOllflMS 3RM W O K I J O K I S E M I C O N D U C T O R GR OU P O K I semiconductor_ r - ? 2 - n -o MSM6569_ _ LCD Dot Matrix Segment Driver TAB GENERAL DESCRIPTION The MSM6569 is a LCD dot m atrix segment driver of a CMOS 1C which consists o f a 160-bit |
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msm6569_msm6569160-bitl016o | |
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Contextual Info: O K I Semiconductor MSM5117405A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405A is a4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117405A achieves high integration, high-speed operation, and low-power |
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msm5117405a304-word26/24-pincycles/32 | |
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Contextual Info: O K I Semiconductor MSM5 1 16160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power |
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576-word16-bitmsm5116160a42-pin+1 | |
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44PIN
Abstract: MSC1187
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l724e4gmsc1187-xx33-bit44pin+1 | |
str s6501
Abstract: SF 119 D MSM80C85A-2 MSM80C86A-10 MSM80C88A-10 80c86a Coprocessor 8086 82C84A
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724b40msm80c86a-1ors/gs/js16-bitmsm80c86a-10+9 | |
M6552
Abstract: PIMF MSM65524 65P524 MSM65P524 m65524 OKI nX-8
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msm65524msm65p524nx-8/5010mhz+8 | |
OA71
Abstract: A7137
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msc23t/pv4720a-xxbs18304-word72-bitmsc23t/dv4720a-xxbs+4 | |
oki 117400Contextual Info: O K I Semiconductor MSM5 117400 _ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The M SM 5117400 is a n ew generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the MSM5117400 is OKI's CMOS silicon gate process technology. |
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304-word304-wmsm5117400b7e424d+2 | |
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Contextual Info: O K I Semiconductor MSM7543 / MSM7544 5V Single-Rail PCM CODECs DESCRIPTION The MSM7543 and MSM7544 are single-rail, low-voltage, single-channel PCM CODECs which perform voice digitization using presampling and reconstruction filters for transmit and receive operation in PCM |
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msm7543msm75446k-100 | |
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Contextual Info: O K I Semiconductor MSC23432B-XXBS32/DS32 4,194,304-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23432B-xxBS32/D S32 is a fully decoded 4,194,304 word x 32-bit CM OS Dynamic Random Access Memory Module composed of thirty-two 4-Mb DRAM s in SOJ MSM514100B packages mounted |
OCR Scan |
msc23432b-xxbs32/ds32304-word32-bit23432b-xxbs32/d+2 | |
package zip-20
Abstract: 20-PIN 26-PIN ZIP20-P-400 514256
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OCR Scan |
msm514256h144-word512cycles/8ms20-pin+6 | |