MRA1600 Search Results

LT 6728

Abstract: RA1600-13 TE 2161 motorola MRA1600-13 MRA1600
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MRA1600 Series The RF Line M ic ro w av e P o w er Transistors . . d esig n ed p rim a rily fo r large-signal o u tp u t and d riv e r a m p lifie r stages fo r m o b ile sat­ e llite up links. 7.0 to 8.4 dB 1600-1660 M Hz

MRF648

Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Contextual Info: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137

MRA transistor

Abstract: MRA1600-2 MRA1600 581 transistor motorola Motorola 581 motorola 803 transistor MOTOROLA 813 transistor motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRA1600/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistor MRA1600-2 Designed primarily for large–signal output and driver amplifier stages for mobile satellite up links. • Designed for Class C, Common Base Power Amplifiers

motorola 803 transistor

Abstract: transistor 164 motorola motorola 1550 22565 MOTOROLA MRA1600-2 MRA1600
Contextual Info: MOTOROLA Order this document by MRA1600/D SEMICONDUCTOR TECHNICAL DATA MRA1600-2 Designed primarily for large–signal output and driver amplifier stages for mobile satellite up links. • Designed for Class C, Common Base Power Amplifiers • Specified 28 Volt, 1640 MHz Characteristics:

Contextual Info: MRA1600-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50â V(BR)CBO (V) I(C) Max. (A)0.5 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.5m @V(CBO) (V) (Test Condition)28

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

MRF648

Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

transistor C 5027

Abstract: 22565 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistor Designed primarily for large-signal output and driver amplifier stages for mobile satellite up links. • Designed for Class C, Common Base Power Amplifiers • Specified 28 Volt, 1640 MHz Characteristics:

transistors JX 6822 A

Abstract: MATSUA compressor R12 scf 101 saw filter gte wiring diagram audio amplifier ic 6283 am/transistors JX 6822 A Sansui 21 i fs circuit diagram MC145202 addendum ne602 scrambler motorola power transistor 7752 MC145026
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . viii Chapter One Selector G u id e .1.1-1

transistor C 5027

Abstract: MRA1600 c 5027-r transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistor Designed primarily for large-signal output and driver amplifier stages for mobile satellite up links. • Designed for Class C, Common Base Power Amplifiers • Specified 28 Volt, 1640 MHz Characteristics:

hall marking code A04

Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”