MPF111 Search Results

2N4221 motorola

Abstract: 2N4360 MPF3821 2n5270 motorola 2n4360 2N4220 MOTOROLA 2N5465 MOTOROLA 2N4222 motorola 2N5458 motorola 2N5457 MOTOROLA
Contextual Info: FIELD-EFFECT TRANSISTORS continued Low-Frequency/Low-Noise (continued) P-Channel JFETs Re \ ros Re Yfs Package TO 92 t = Device MPF111 (mmho) MIN @ VDS (V) (umho) MAX @ VDS (V') 0.5 10 200 10 c lss c rss V(BR)GSS v (BR)GDO (pF) (MAX) (pF) MAX (V) MIN MIN

J2N5457

Abstract: MPF105 MPF103 MPF106 U1897E 2N4303 J2N5458 MPF104 2N4302 mpf102
Contextual Info: National Semiconductors F.E.T.'s-N-Channel Semiconductor General Purpose Amplifiers Epoxy Package REFERENCE TA B LE BVg ss ’BVd g o V (M in) Code E101 M P F1 03 M P F1 04 M P F1 05 M P F1 09 M P F1 10 MPF111 2N3819 2N4302 2N4303 2N 5457 2N5458 2N5459 30

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

mpf211

Abstract: MPFR-M14-4 EN12453 MPF2115 MPF 120 MPFT15-M14-4C MPFR15-XXX-4C MPF3912RSI rs 12 relay MPF2-912
Contextual Info: Photoelectrics Through-beam System, Relay Output Type MPF.RS • • • • • • • • • • • • • Industrial doors and gates Range: 15 m Modulated infrared light Option with individually adjustable channel sensitivity Amplifier with “Snap-ON” photoelectric switches

2N3819 equivalent

Abstract: MPF111 2N3821-4 2N5045 2N3819 2N3921-2 2N4220-2 2N4223-24 2N5457-9 2N5556-58
Contextual Info: designed fo r B . S ilic o n ix Performance Curves NRL See Section 5 • G eneral Purpose Am plifiers MPF109 n-channel JFET B E N E F IT S • Low Cost ■ Analog Switches • Autom atic Insertion Package TO -92 See Section 7 A B S O L U T E M AXIM UM R A T IN G S 25°C

2N6658

Abstract: J201 Replacement 1280A PN4304 2N3323 2N4119 JFET 2N4341 2n4416 jfet 2N6568
Contextual Info: T P r o d u c t S p e c i f i c a t i o n s C o n fd GENERAL Product Specifications DEVICE lUT sìgIì ì ì F E PURPOSE —I —1 G EO M ETRY (Section 4) . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

MPF111

Abstract: 2N5459 MOTOROLA 2N3436 2N4220 MOTOROLA 2N4221 motorola 2N5363 2n5556 2n5358 2N5360 2N4222 motorola
Contextual Info: ¥4 MOTOROLA SC -CDIODES/OPTOJ 6367255 MOTOROLA * SC D E | b B b 7 a S S □ □ 3fl03b <D I O D E S / O P T O 34C :> 1 38036 D '7^-2'J-tsr' FIELD-EFFECT TRANSISTORS DICE continued) die n o . 2C4220 LINE SOURCE — DFM131 This die provides performance equal to or better than that of

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

Contextual Info: AL L E GRO MI C ROS Y S T E MS 8514019 SPRA G U E. I NC T3 D • 0 5 D4 3 3 Ö S E M IC O N D S / I C S GDD3bü3 93D 1 ■ ALGR 0 3 6 0 3 J> PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGs on V(BR)GSS

2n3819 equivalent ic

Abstract: 2N5045-7 2N5045 2N3819 equivalent MPF111 equivalent U401-6 2n4220 2N3821-4 2N3921-2 2N4084-5
Contextual Info: monolithic dual n-channel JFET S NNR BACKS'0€ JUNCTION ISOLATED Siliconix designed f o r . . . • FE T Input Amplifiers B E N E FIT S : ■ Low and Medium Frequency Amplifiers • ■ Impedance Converters ■ Precision instrumentation Amplifiers M inim um System Error and Calibra­

2N3819 equivalent

Abstract: 2n3819 2n4222 to 92 2N5045 Siliconix JFET Dual
Contextual Info: 2N4222A 2N4222 2N4221A 2N4221 2N4220A 2N4220 Siliconix designed for . . . • ■ ■ ■ Performance Curves NRL See Section 5 Small-Signal Amplifiers VHF Amplifiers Oscillators M ixers BEN EFITS • High Gain • Low Receiver Noise Figure •A B S O LU TE M A X IM U M R A TIN G S 25°C

2n5458N

Abstract: MPF111 J201-18 2N3821 J202 J203-18 2N3822 2N4220 PN4303 2N4222
Contextual Info: GENERAL G EOM ETRY Section 4 Product Specifications D E V IC E lUT sìgIììì FET Product Specifications (Confd) PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z X Ii

RX1113

Abstract: MPF 120
Contextual Info: Photoelectrics Through-beam System, Relay Output Type MPF.RS • • • • • • • • • • • • Product Description The MPFRS. is a family of inexpensive general purpose photoelectric sensors in 3 different types of housings with separate amplifier. They are

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

2N3819 equivalent

Abstract: 2N5045 2N3819 2N3821-4 2N3921-2 2N4084-5 2N4220-2 2N4223-24 2N5457-9 2N5556-58
Contextual Info: MPFl 11 n-channel JFET designed fo r B . Siliconix Perform ance Curves NRL See Section 5 • General Purpose Amplifiers ■ Analog Switches B EN EFITS • Low Cost • Automatic Insertion Package TO -92 See Section 7 ABSOLUTE M A X IM U M RA TIN G S 25°C

2N3820

Abstract: TP2609 MPF111 TP3331 MPF110 MPF112 MPF820 NJ32 TPBC264A TPBC264B
Contextual Info: î SPRAGUE/SEMICOND 8 5 1 4 0 1 9 SPRAGUE. GROUP ^ D • S E M I C O N D S / ICS ÖS13Ö50 0DG3LG3 93D 03603 T J> T ï'Z Ÿ - Z - S PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGSfOlf V BB]GSS Limits

Contextual Info: î SPRAGUE/SEMICOND 8 5 1 4 0 1 9 SP RA GU E. GROUP ^ D • S E M I C O N D S / ICS ÖS13Ö50 0DG3LG3 9 3 D 03 6 0 3 T J> T ï 'Z Ÿ - Z - S PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGSfOlf V BB]GSS

j201 jfet

Abstract: 2N4303 J201 Replacement fet cross reference FET J202 2N4381 2N3966 2N3909 J-FET 2N4393
Contextual Info: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z

J201 Replacement

Abstract: 2N6658 fet cross reference 2N3323 3N155 Siliconix JFET 2N3823 fet 2N4393 JFET 2N5457 3N157
Contextual Info: GENERAL G EOM ETRY Section 4 Product Specifications D E V IC E lUT sìgIììì FET Product Specifications (Confd) PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z X Ii

J201 Replacement

Abstract: fet cross reference 2N3B19 j201 Cross Reference 2n4381 JFET 2N4302 CROSS REFERENCE 2n6661 2N4393 fet 2N4304
Contextual Info: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z