MOC8113 Search Results

MOC8113

Abstract: MOC8111 MOC8112
Contextual Info: MOTOROLA Order this document by MOC8111/D SEMICONDUCTOR TECHNICAL DATA MOC8111* [CTR = 20% Min] GlobalOptoisolator MOC8112* 6-Pin DIP Optoisolators Transistor Output No Base Connection [CTR = 50% Min] MOC8113 [CTR = 100% Min] *Motorola Preferred Devices

IEC60747-5-2

Abstract: optocoupler supply schematic 6 pin Optocoupler MOC8111M MOC8111SM MOC8111SR2M MOC8111TM MOC8112M MOC8113M
Contextual Info: MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications No Base Connection Features Description • High isolation voltage The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for

moc812

Abstract: MOC8113 MOC8111 MOC8111S MOC8111SD MOC8111W MOC8112
Contextual Info: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8111 MOC8112 MOC8113 PACKAGE SCHEMATIC ANODE 1 6 6 N/C 6 CATHODE 2 1 5 COLLECTOR 1 N/C 3 4 EMITTER 6 1 DESCRIPTION The MOC811X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not

Contextual Info: MOC8111X,MOC8112X,MOC8113X MOC8111, MOC8112, MOC8113 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802

PFU1

Abstract: AS-3439
Contextual Info: [ • O PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MOC8111 MOC8112 MOC8113 DESCRIPTION PACKAGE DIMENSIONS The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Î Ä I w t S JU 1 _ L_ _ ip 8.89 8.38 FEATURES 0.2 High isolation voltage

MOC8113

Abstract: E91231 MOC8111 MOC8111X MOC8112 MOC8112X MOC8113X vce 500v NPN Transistor
Contextual Info: MOC8111X,MOC8112X,MOC8113X MOC8111, MOC8112, MOC8113 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802

Contextual Info: MOTOROLA Order this document by MOC8111/D SEMICONDUCTOR TECHNICAL DATA ® TO VD E UL CSA SETI SEM K O DEMKO NEMKO BABT G lobalO ptoisolator 6-Pin DIP Optoisolators Transistor Output No Base Connection MOC8111* MOC8112* MOC8113 [C TR = 20% Min] [C TR = 50% Min]

MOC8113

Abstract: E91231 MOC8111 MOC8111X MOC8112 MOC8112X MOC8113X
Contextual Info: MOC8111X,MOC8112X,MOC8113X MOC8111, MOC8112, MOC8113 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802

IEC60747-5-2

Abstract: moc812 MOC8111M MOC8111SM MOC8111SR2M MOC8111TM MOC8112M MOC8113M
Contextual Info: MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications No Base Connection Features Description • High isolation voltage The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for

Contextual Info: E U PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MOC8111 MOC8112 MOC8113 PACKAGE DIMENSIONS DESCRIPTION The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. db Æ db FEATURES J 4.06 3.81 i l High isolation voltage 5300 VAC RMS—1 minute

motorola 5118 setup

Abstract: OC811
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE GlobalOptotsolâtor TO UL ®®®® C8A sen BEMKO DEMKO NEMKO BAST 6 -Pin DIP Optolsolators Transistor Output No Base Connection MOC8111* MOC8112* MOC8113 fCTR • 20% Min] [CTR - 60% Min] [CTR • 100* Min]

C1686

Abstract: C1685 transistor C1685 TRANSISTOR C1685 MOC8112 MOC8113 SSs 02 C2079 TL431 equivalent C1679
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MOC8111 MOC8112 MOC8113 DESCRIPTION PACKAGE DIMENSIONS The M O C series c o n sists of a Gallium A rsenide IRED couple d with an N P N phototransistor. t 7 “ f i B Œ „ 03 Œ 8.89 8.38 FEATURES 0.2 It tgi ^

MOC8113

Abstract: E244343 OPTO610 SFH600-0
Contextual Info: MOC8113 SFH600-0 UL # E244343 Global Supplier of Optoelectronic Solutions UL # E244343 Schematic: Features: 1 6 2 5 3 4 1.Current transfer ratio CTR : min 100% at IF=10mA Vce=10V 2.High isolation voltage between input and output (Viso : 5300Vrms, 7500vPK).

M0C8113

Abstract: OC8112 M0C8111 OC811 m0c8112
Contextual Info: E PHOTOTRANSISTOR OPTOCOUPLERS U OPTOELECTRONICS MOC8111 MOC8112 MOC8113 PACKAGE DIMENSIONS DESCRIPTION db Æ Æ The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Î “ « t I l 03 I V c p _ g ì 8.89 8.38 ~ -J _ 2.3;

IEC60747-5-2

Abstract: MOC8111M MOC8111SM MOC8111SR2M MOC8111TM MOC8112M MOC8113M
Contextual Info: MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications No Base Connection Features Description • High isolation voltage The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for

MOC8113

Abstract: MOC8112 HC-36/MOC8113
Contextual Info: MOC81H MOC8112 MOC8113 TRANSISTOR OUTPUT OPTOCOUPLERS BASE CONNECTION WITH NO ,. gallium arsenide LEtI optically coupled to silicon phototransistor designed for applications requiring improved noise immunity, high electrical isolation, small package size and low cost,

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

moc 300v

Abstract: moc 7002
Contextual Info: ISOCOM COMPONENTS LTD 4SE D • 4flflbS10 DOQOHSM 5 ■ ISO | MOC 8111X, MQC 8112X, MOC 8113X », f, M,t ■■ jffgwM,i -m{ =”1-'.fr-'#fr-fri Üa* -i■ " OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT : f DESCRIPTION The MOC 811IX,8112X.8113X are optically coupled

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

p421 coupler

Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
Contextual Info: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety

transistor 6NC

Abstract: CNX82S
Contextual Info: 6 LEADED DEVICES continued Transistor Output with No Base Connection Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emltter, 5-Collector, 6-N.C. (Style 3) Current Transfer Ratio (CTR) % a\ Min Device MOC8101S.F MOC8102S,F MOC8103S,F MOC8104S,F MOC8111S,F CNX82S.F

Contextual Info: MOTOROLA m SEM ICO NDUCTO R TECHNICAL DATA M O C 8 1 11 M O C 8112 M O C 81 13 6-P in D IP O p to iso lato rs Transistor Output These d evices co n sist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r d etector. The in te rn a l base-to-Pin 6 co nn e ctio n

mcp3021z

Abstract: P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler
Contextual Info: PHOTOCOUPLER CROSS REFERENCE For user’s convenience, the Sharp equivalents in comparison with the other m anufacturers’ products are suggested in this list. The data is prepared on the basis of main electrical and mechanical characteristics, however, Sharp assumes no responsibility for the actual use of the data and for the specifications of other