MJ16010 Search Results

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJ16010 Designer's Data Sheet MJW16010 SWITCHMODE Series NPN Silicon Power Transistors MJ16012* These transistors are designed for high-voltage, high-speed, power switching in

MJ16010

Abstract: bi 370 transistor MJ16012 ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503 MJW16010
Contextual Info: MOTOROLA Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 D esigner’s Data Sheet SW ITCHM ODE S eries NPN S ilicon Pow er Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in

p6302

Abstract: MJH16010
Contextual Info: MOTOROLA SC X STR S/R 1SE D I F b 3 b ?2 5 4 0 0 0 5 2 0 3 t. | -7 = 3 3 -/^ T ~ & ii MJ16010 MJH16010 Ml 16012 MJH16012 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s D a ta S h e e t 15 A M P E R E SW ITCH M O D E III S E R IE S NPN SILIC O N POW ER T R A N S IS TO R S

MJ16010

Abstract: MJ16012 p6302 IC 7403 2N6191 MJW16010 MJW16012 AM503 mj16
Contextual Info: ON Semiconductort MJ16010 SWITCHMODEt Series NPN Silicon Power Transistors MJW16010 MJ16012 * These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The

MJ16010

Contextual Info: Product Specification www.jmnic.com MJ16010 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Switching Regulators ・Inverters ・Solenoids ・Relay Drivers ・Motor Controls ・Deflection Circuits

MJ16010

Contextual Info: MJ16010 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

mj16010

Contextual Info: SavantIC Semiconductor Product Specification MJ16010 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits

MJ16012

Abstract: MJH16010 MJ16010 MJH16012 MJI6012
Contextual Info: Power Transistors. MJ16010, MJ16012, MJH16010, MJH16012 HARRIS SEMICOND SECTOR 27E D File Number M3GS271 0 0 2 0 4 5 G • 1839 4 «HAS -T V 3 3 - 15 “T - - 3 3 - I 3 5-A SwitchMaXW Power Transistors H ig h -V o lta g e N -P -N Types for O ff-L in e P ow er Supplies

mje340 equivalent

Abstract: 2sd358 equivalent bd139 equivalent transistor BD139 fall time BU108 2SA794 equivalent transistor mj11028 equivalent MJ15025* equivalent NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 c 3198 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16010  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for

MJ16010

Abstract: MJ16010 DATASHEET
Contextual Info: Inchange Semiconductor Product Specification MJ16010 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Switching Regulators ・Inverters ・Solenoids ・Relay Drivers ・Motor Controls ・Deflection Circuits

MJ16010

Abstract: MJ16012 ic 10 209 IC 7403 MJ16010 DATASHEET AM503 MJW16010 MJW16012 P6302 MJ16012 MOTOROLA
Contextual Info: MOTOROLA Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA MJ16010 Designer's  Data Sheet SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for

Contextual Info: MJ16010 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJ16010A MJH16010A POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 and 175 WATTS NPN Silicon Power Transistors 1 kV Switchmode III Series These transistors are designed for high-voltage, high-speed, power switching in

MJH16010

Abstract: MJ16010 MJ16012 MJH16012 100-C h1601
Contextual Info: ~Öi » F |3 ä 7 5 0 fll 3 aai7D 70 I~ 3875081 G E SO LID STATE 0 1E 17 070 SwftcäMa* Power MJ16010, MJ16012 MJH16010,MJH16012 D > U I File N u m b e r 1P 1839 5-A Sw itchM aX II Power Transistors

MJH16010

Abstract: MJ16012 MJ16010 MJI6010 MJH16012
Contextual Info: Ql 3875081 G E SOLID DE I 3 f l ? 5 0 f l l STATE 3 DD1707Q 0 1E 1 70 70 D Sw KckM a* Pow er MJ16010, MJ16012 MJH16010,MJH16012 U I File N u m b e r I p 1839 5-A SwitchMaXW Power Transistors High-Voltage N -P -N Types for O ff-Line Power Supplies

Contextual Info: MJ16010 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

h1601

Contextual Info: H A RR IS S E M I C O N D S E CT OR 5bE » • 4302271 GGMGÖÖM lbb « H A S MJ16010, MJ16012 File Number 1 8 3 9 .1 7=125-/? 5-A Sw itchM a* II Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

STI-430

Abstract: DTS-411 DTS-804 Transistor DTS801 DTS-430 DTS-423 transistor MJ 15024 STI801 DTS-723 transistor st 431
Contextual Info: SEMICONDUCTOR TECHNOLOGY OSE D J fll3bM5fl D G 0 0 2 S b NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS STI Type ST-13071 ST-13080 ST-13081 ST-13090 ST-13091 Industry Type MJ-13071 MJ-13080 MJ-13081 MJ-13090 MJ-13091 Power Dissipation @25 °C watts

transistor buv18a

Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

mj16010

Abstract: MJ16012 MJ16012 MOTOROLA MJ16012 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in In d u c tiv e c irc u its w h e re fa ll tim e is c ritic a l. T h e y a re p a rtic u la rly s u ite d fo r

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.