MIC4452 Search Results

MIC4451AJ

Abstract: MIC4451 5962-8877005HA MIC4451BM MIC4451BN MIC4451CT MIC4452 power switch with tl494 MIC4452AWBQ TL494
Contextual Info: MIC4451/4452 Micrel MIC4451/4452 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4451 and MIC4452 CMOS MOSFET drivers are tough, efficient, and easy to use. The MIC4451 is an inverting driver, while the MIC4452 is a non-inverting driver.

high side MOSFET driver with charge pump

Abstract: dual high side MOSFET driver with charge pump MOSFET CURRENT output impedance mosfet 4468 mosfet 3,2v gate mosfet 4425 MIC428 DUAL MOSFET DRIVER 14 PIN MIC4426 MIC426/MIC427/MIC428
Contextual Info: •HIERe L MOSFET Driver Selection Guide MIC4451/4452 1500pF to 62,000pF 12A Peak Output 0.8Q Output Impedance 25ns into 15,000pF 4.5V to 18V Supply Latch-Up Protected W ithstands 5V Negative Swing Surface Mount and High Power Package Available MIC4451 MIC4452

MIC4451

Abstract: IGBT parallel Power Supply TL494 1N4448 MIC4451BM MIC4451BN MIC4451CT MIC4452 MIC4452BM MIC4452BN
Contextual Info: MIC4451/4452 Micrel MIC4451/4452 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process Final Information General Description Features MIC4451 and MIC4452 CMOS MOSFET drivers are tough, efficient, and easy to use. The MIC4451 is an inverting driver, while the MIC4452 is a non-inverting driver.

MIC44512

Abstract: tl494 application notes motor control MIC4452 MIC4452BM tl494 led driver WIMA MK22 MIC4451 12v 5v TL494 BYV 35 C ic tl494 mosfet
Contextual Info: MIC4451/4452 Micrel MIC4451/4452 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4451 and MIC4452 CMOS MOSFET drivers are tough, efficient, and easy to use. The MIC4451 is an inverting driver, while the MIC4452 is a non-inverting driver.

ic tl494 cn

Abstract: 5v dc power supply with TL494 MIC4451
Contextual Info: MIC4451/4452 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4451 and MIC4452 CMOS MOSFET drivers are tough, efficient, and easy to use. The MIC4451 is an inverting driver, while the MIC4452 is a non-inverting driver.

tl494 motor

Abstract: MIC4451ZT MIC4452 MIC4452ZT MIC4451YM MIC4452BM MIC4452YN MIC4451 capacitor wima mks 4 0.1uF IGBT parallel
Contextual Info: MIC4451/4452 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4451 and MIC4452 CMOS MOSFET drivers are tough, efficient, and easy to use. The MIC4451 is an inverting driver, while the MIC4452 is a non-inverting driver.

MIC4451

Contextual Info: MIC4451/4452 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4451 and MIC4452 CMOS MOSFET drivers are tough, efficient, and easy to use. The MIC4451 is an inverting driver, while the MIC4452 is a non-inverting driver.

MIC4452YN

Abstract: MIC4452VM mic4451zt MIC4452ZT mic4451yn MIC4451ym MIC4452YM IGBT parallel TL494 Peak Low-Side MOSFET Driver
Contextual Info: MIC4451/4452 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4451 and MIC4452 CMOS MOSFET drivers are robust, efficient, and easy to use. The MIC4451 is an inverting driver, while the MIC4452 is a non-inverting driver.

IGBT parallel

Abstract: MIC4451 MIC4451BM MIC4451YM MIC4452 MIC4452BM MIC4452YN tl494 24v MIC4452ZT mic4451zt
Contextual Info: MIC4451/4452 Micrel, Inc. MIC4451/4452 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4451 and MIC4452 CMOS MOSFET drivers are tough, efficient, and easy to use. The MIC4451 is an inverting driver, while the MIC4452 is a non-inverting driver.

tsc170

Abstract: tl494 application notes motor control tl494 mosfet MIC4451 MIC44512 MIC4452 MIC4452YN tl494 equivalent MIC4451BM MIC4451BN
Contextual Info: MIC4451/4452 Micrel, Inc. MIC4451/4452 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4451 and MIC4452 CMOS MOSFET drivers are tough, efficient, and easy to use. The MIC4451 is an inverting driver, while the MIC4452 is a non-inverting driver.

Contextual Info: APT45GR65BSCD10 APT45GR65BSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and

APT42F50B

Abstract: APT42F50S MIC4452 43A 013
Contextual Info: APT42F50B APT42F50S 600V, 43A, 0.13Ω Max trr ≤260ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT54GA60B

Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Contextual Info: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

APT36GA60B

Abstract: APT36GA60S MIC4452 c 1853
Contextual Info: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT14F100B

Abstract: APT14F100S MIC4452
Contextual Info: APT14F100B APT14F100S 1000V, 14A, 0.98Ω Max, trr ≤240ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

MIC4452

Abstract: APT8M100B APT8M100S
Contextual Info: APT8M100B APT8M100S 1000V, 8A, 1.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

8114

Abstract: APT12M80B APT12M80S MIC4452
Contextual Info: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT9M100B

Abstract: APT9M100S MIC4452
Contextual Info: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT28GA60BD15

Abstract: APT6017LLL MIC4452
Contextual Info: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT17F80B

Abstract: APT17F80S MIC4452
Contextual Info: APT17F80B APT17F80S 800V, 18A, 0.58Ω Max, trr ≤250ns N-Channel FREDFET TO -2 POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

APT28GA60K

Abstract: MIC4452
Contextual Info: APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT30F50B

Abstract: APT30F50S MIC4452
Contextual Info: APT30F50B APT30F50S 500V, 30A, 0.19Ω Max, trr ≤230ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT37F50S

Abstract: MIC4452 APT37F50B
Contextual Info: APT37F50B APT37F50S 500V, 37A, 0.15Ω Max, trr, ≤250ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT23F60B

Abstract: APT23F60S MIC4452
Contextual Info: APT23F60B APT23F60S 600V, 24A, 0.29Ω Max, trr ≤220ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft