APT36GA60S Search Results

APT36GA60S Datasheets (2)

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Microsemi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
APT36GA60S		Microsemi	Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3 [S]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 36;	Original	PDF	213.45KB	6
APT36GA60SD15		Microsemi	Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 36;	Original	PDF	243.65KB	9

APT36GA60S Price and Stock

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Microchip Technology Inc


Microchip Technology Inc APT36GA60SD15 IGBT PT MOS 8 Combi 600 V 36 A TO-268, TO-268, Projected EOL: 2028-11-26
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Microchip Technology Inc	APT36GA60SD15	Tube		20 Weeks		1 $7.20 10 $7.20 100 $6.22 1000 $5.71 10000 $5.52	Buy Now
Vyrian	APT36GA60SD15		1,050			1 - 10 - 100 - 1000 - 10000 -	Get Quote

APT36GA60S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
APT36GA60B Abstract: APT36GA60S MIC4452 c 1853 Contextual Info: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	apt36ga60b apt36ga60s mic4452 c 1853	PDF
SD15 Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328 Contextual Info: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT	Original	apt36ga60bd15 apt36ga60sd15 sd15 apt36ga60b +5mic4452 400v 20a ultra fast recovery diode j750 1800g tf328	PDF
439J Contextual Info: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT	Original	apt36ga60bd15 apt36ga60sd15 439j	PDF
Contextual Info: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT	Original	apt36ga60bd15 apt36ga60sd15	PDF
Contextual Info: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 D 3 PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	apt36ga60b apt36ga60s	PDF
400v 20A ultra fast recovery diode Contextual Info: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 D 3 PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	apt36ga60b apt36ga60s 400v 20a ultra fast recovery diode	PDF