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    MGFC42 Search Results

    MGFC42 Datasheets (18)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MGFC42V3436
    		Mitsubishi 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET Original PDF 193.28KB 2
    MGFC42V3436
    		Mitsubishi 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET Original PDF 144.32KB 2
    MGFC42V3742
    		Mitsubishi 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET Original PDF 209.68KB 2
    MGFC42V3742
    		Mitsubishi 3.7 - 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET Scan PDF 92.03KB 2
    MGFC42V3742
    		Unknown FET Data Book Scan PDF 80.41KB 2
    MGFC42V3742A
    		Mitsubishi 3.7-4.2 GHz Band 16W Internally Matched GaAs FET Scan PDF 106.67KB 2
    MGFC42V4450
    		Mitsubishi 4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET Scan PDF 92.09KB 2
    MGFC42V4450A
    		Mitsubishi 4.4-5.0 GHz Band 16W Internally Matched GaAs FET Scan PDF 107.07KB 2
    MGFC42V5258
    		Mitsubishi 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET Original PDF 193.26KB 2
    MGFC42V5258
    		Mitsubishi 5.2-5.8 GHz Band 16W Internally Matched GaAs FET Scan PDF 79.48KB 2
    MGFC42V5258A
    		Mitsubishi 5.2-5.8GHz band 16W internally matched GaAs FET Scan PDF 79.48KB 2
    MGFC42V5867
    		Mitsubishi 5.8~6.75GHZ BAND 16W INTERNALLHY MATCHED GaAs FET Original PDF 254.32KB 3
    MGFC42V5964
    		Mitsubishi 5.9-6.4 GHz Band 16W Internally Matched GaAs FET Scan PDF 80.57KB 2
    MGFC42V5964A
    		Mitsubishi 5.9-6.4GHz band 16W internally matched GaAs FET Scan PDF 80.57KB 2
    MGFC42V6472
    		Mitsubishi 6.4-7.2 GHz Band 16W Internally Matched GaAs FET Scan PDF 85.28KB 2
    MGFC42V6472A
    		Mitsubishi 6.4-7.2GHz band 16W internally matched GaAs FET Scan PDF 85.28KB 2
    MGFC42V7785A
    		Mitsubishi 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET Original PDF 211.63KB 2
    MGFC42V7785A
    		Mitsubishi 7.7-8.5GHz Band 16W Internally Matched GaAs FET Scan PDF 100.99KB 2
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    MGFC42 Price and Stock

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    Abracon Corporation AMPMGFC-42.5000

    MEMS Oscillator, 42.5 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Bulk (Alt: AMPMGFC-42.5000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMGFC-42.5000 Bulk 1,000
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    Mouser Electronics AMPMGFC-42.5000
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    • 10000 $1.38
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    Abracon Corporation AMPMGFC-42.5000T3

    MEMS Oscillator, 42.5 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGFC-42.5000T3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMGFC-42.5000T3 Reel 3,000
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    Mouser Electronics AMPMGFC-42.5000T3
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    Abracon Corporation AMPMGFC-42.5000T

    MEMS Oscillator, 42.5 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGFC-42.5000T)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMGFC-42.5000T Reel 1,000
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    Mouser Electronics AMPMGFC-42.5000T
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    Mitsubishi Electric MGFC42V5964A-61

    C BAND, GAAS, N-CHANNEL, RF POWER, JFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC42V5964A-61 73
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    MGFC42 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MGFC42V5867

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8~6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC42V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		MGFC42V5867 75GHz MGFC42V5867 GF-18 25deg PDF

    MGFC42V5964A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC42V5964A MGFC42V5964A Item-51] PDF

    MGFC42V5258

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8


    Original     		MGFC42V5258 MGFC42V5258 June/2004 PDF

    MGFC42V5867

    Contextual Info: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8 ~ 6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		June/2004 MGFC42V5867 75GHz MGFC42V5867 PDF

    MGFC42V7785A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC42V7785A MGFC42V7785A 32dBm 10MHz June/2004 PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V778S 7 .7 — 8 .5G H z BAND 16W INTERNALLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 — 8 .5 GHz band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		MGFC42V778S PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 42V 6472 6.4~ 7.2G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472 is an internally impedance-matched GaAs power FE T especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		MGFC42V6472 27C102P, RV-15 16-BIT) PDF

    Contextual Info: < C band internally matched power GaAs FET > MGFC42V3742 3.7 – 4.2 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC42V3742 MGFC42V3742 -45dBc 31dBm PDF

    Contextual Info: <C band Internally Matched Power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package


    Original     		MGFC42V7177 MGFC42V7177 PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V778S 7 .7 —8.5GÜZ BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M GFC42V7785 is an internally impedance-matched GaAs power F E T especially designed for use in 7 .7 - 8 .5 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		MGFC42V778S GFC42V7785 27C102P, RV-15 16-BIT) PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V4450 4.4 ~ 5.0GHz BAND 16 W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC42V4450 MGFC42V4450 31dBm 10MHz June/2004 PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC42V3742 MGFC42V3742 31dBm 10MHz June/2004 PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC42V6472A MGFC42V6472A Item-51] June/2004 PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42 V 3 7 4 2 A p r . e u . t h i s •« " “ 7 r n e 'riC ” c h ,n ,* ' 3 . 7 ~ 4 .2 G H z BAND 1 6 W IN TE R N A LLY M ATCHED GaAs FE T DESCRIPTION OUTLINE D RA W ING T h e M G F C 4 2 V 3 7 4 2 A is an internally im p e d a n c e-m a tc h e d


    OCR Scan     		MGFC42 PDF

    PO32

    Abstract: MGFC42V3436
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6


    Original     		MGFC42V3436 MGFC42V3436 -45dBc 32dBm June/2004 PO32 PDF

    MGFC42V3742

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2


    Original     		MGFC42V3742 MGFC42V3742 31dBm 10MHz June/2004 PDF

    MGFC42V3742

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET . DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2


    Original     		MGFC42V3742 MGFC42V3742 31dBm 10MHz PDF

    GAAS FET AMPLIFIER f 10Mhz to 2 GHz

    Abstract: MGFC42V6472A
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC42V6472A MGFC42V6472A Item-51] GAAS FET AMPLIFIER f 10Mhz to 2 GHz PDF

    MGFC42V5964A

    Abstract: mgfc42v5964
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC42V5964A MGFC42V5964A Item-51] June/2004 mgfc42v5964 PDF

    MGFC42V5964

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964 5.9~6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC42V5964 MGFC42V5964 MGFC42V5964-510V MGFC42V5964-51, 32dBm 10MHz May-02 PDF

    MGFC42V5258

    Abstract: GF-18 5.8GHz
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8


    Original     		MGFC42V5258 MGFC42V5258 25deg GF-18 5.8GHz PDF

    MGFC42V6472A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC42V6472A MGFC42V6472A Item-51] PDF

    MGFC42V5964

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964 5 .9 — 6.4GH z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The OUTLINE DRAW ING M G F C 4 2 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especailly designed fo r use in 5 .9 ~ 6.4 20.4 ± 0 .2 0 .8 0 3 + 0.008


    OCR Scan     		MGFC42V5964 MGFC42V5964 15GHz 40GHz 41GHz PDF

    4433 fet

    Abstract: F4535 high power FET transistor s-parameters MGFC42V3436 VDS-10
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V3436 is an internally impedance-matched Unit: millimeters GaAs power FET especially designed for use in 3.4 - 3.6 24+/-0.3


    Original     		MGFC42V3436 MGFC42V3436 4433 fet F4535 high power FET transistor s-parameters VDS-10 PDF