MGFC42 Search Results

MGFC42 Datasheets (18)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGFC42V3436	Mitsubishi	3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET	Original	PDF	193.28KB	2
MGFC42V3436	Mitsubishi	3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET	Original	PDF	144.32KB	2
MGFC42V3742	Mitsubishi	3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET	Original	PDF	209.68KB	2
MGFC42V3742	Mitsubishi	3.7 - 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET	Scan	PDF	92.03KB	2
MGFC42V3742	Unknown	FET Data Book	Scan	PDF	80.41KB	2
MGFC42V3742A	Mitsubishi	3.7-4.2 GHz Band 16W Internally Matched GaAs FET	Scan	PDF	106.67KB	2
MGFC42V4450	Mitsubishi	4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET	Scan	PDF	92.09KB	2
MGFC42V4450A	Mitsubishi	4.4-5.0 GHz Band 16W Internally Matched GaAs FET	Scan	PDF	107.07KB	2
MGFC42V5258	Mitsubishi	5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET	Original	PDF	193.26KB	2
MGFC42V5258	Mitsubishi	5.2-5.8 GHz Band 16W Internally Matched GaAs FET	Scan	PDF	79.48KB	2
MGFC42V5258A	Mitsubishi	5.2-5.8GHz band 16W internally matched GaAs FET	Scan	PDF	79.48KB	2
MGFC42V5867	Mitsubishi	5.8~6.75GHZ BAND 16W INTERNALLHY MATCHED GaAs FET	Original	PDF	254.32KB	3
MGFC42V5964	Mitsubishi	5.9-6.4 GHz Band 16W Internally Matched GaAs FET	Scan	PDF	80.57KB	2
MGFC42V5964A	Mitsubishi	5.9-6.4GHz band 16W internally matched GaAs FET	Scan	PDF	80.57KB	2

MGFC42V6472	Mitsubishi	6.4-7.2 GHz Band 16W Internally Matched GaAs FET	Scan	PDF	85.28KB	2
MGFC42V6472A	Mitsubishi	6.4-7.2GHz band 16W internally matched GaAs FET	Scan	PDF	85.28KB	2
MGFC42V7785A	Mitsubishi	7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET	Original	PDF	211.63KB	2
MGFC42V7785A	Mitsubishi	7.7-8.5GHz Band 16W Internally Matched GaAs FET	Scan	PDF	100.99KB	2

MGFC42 Price and Stock

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Abracon Corporation AMPMGFC-42.5000 MEMS Oscillator, 42.5 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Bulk (Alt: AMPMGFC-42.5000)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMGFC-42.5000	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	AMPMGFC-42.5000			113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Abracon Corporation AMPMGFC-42.5000T MEMS Oscillator, 42.5 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGFC-42.5000T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMGFC-42.5000T	Tape & Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	AMPMGFC-42.5000T			113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Abracon Corporation AMPMGFC-42.5000T3 MEMS Oscillator, 42.5 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGFC-42.5000T3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMGFC-42.5000T3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	AMPMGFC-42.5000T3			113 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mitsubishi Electric MGFC42V5964A-61 C BAND, GAAS, N-CHANNEL, RF POWER, JFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MGFC42V5964A-61		73			1 $50.70 10 $50.70 100 $44.85 1000 $44.85 10000 $44.85	Buy Now

MGFC42 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGFC42V5867 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8~6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC42V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package	OCR Scan	mgfc42v5867 75ghz gf-18 25deg	PDF
MGFC42V5964A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc42v5964a item-51	PDF
MGFC42V5258 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	mgfc42v5258 june/2004	PDF
MGFC42V5867 Contextual Info: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8 ~ 6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004	Original	june/2004 mgfc42v5867 75ghz	PDF
MGFC42V7785A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	mgfc42v7785a 32dbm 10mhz june/2004	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V778S 7 .7 — 8 .5G H z BAND 16W INTERNALLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 — 8 .5 GHz band amplifiers. The herm etically sealed metal-ceramic	OCR Scan	mgfc42v778s	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 42V 6472 6.4~ 7.2G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472 is an internally impedance-matched GaAs power FE T especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	mgfc42v6472 27c102p rv-15 16-bit	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC42V3742 3.7 – 4.2 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc42v3742 -45dbc 31dbm	PDF
Contextual Info: <C band Internally Matched Power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package	Original	mgfc42v7177	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V778S 7 .7 —8.5GÜZ BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M GFC42V7785 is an internally impedance-matched GaAs power F E T especially designed for use in 7 .7 - 8 .5 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	mgfc42v778s gfc42v7785 27c102p rv-15 +116-bit	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V4450 4.4 ~ 5.0GHz BAND 16 W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	mgfc42v4450 31dbm 10mhz june/2004	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	mgfc42v3742 31dbm 10mhz june/2004	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc42v6472a item-51 june/2004	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42 V 3 7 4 2 A p r . e u . t h i s •« " “ 7 r n e 'riC ” c h ,n ,* ' 3 . 7 ~ 4 .2 G H z BAND 1 6 W IN TE R N A LLY M ATCHED GaAs FE T DESCRIPTION OUTLINE D RA W ING T h e M G F C 4 2 V 3 7 4 2 A is an internally im p e d a n c e-m a tc h e d	OCR Scan	mgfc42	PDF

PO32 Abstract: MGFC42V3436 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6	Original	mgfc42v3436 -45dbc 32dbm june/2004 +1po32	PDF
MGFC42V3742 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2	Original	mgfc42v3742 31dbm 10mhz june/2004	PDF
MGFC42V3742 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET . DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2	Original	mgfc42v3742 31dbm 10mhz	PDF
GAAS FET AMPLIFIER f 10Mhz to 2 GHz Abstract: MGFC42V6472A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc42v6472a item-51 gaas fet amplifier f 10mhz to 2 ghz	PDF
MGFC42V5964A Abstract: mgfc42v5964 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc42v5964a item-51 june/2004 mgfc42v5964	PDF
MGFC42V5964 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964 5.9~6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc42v5964 mgfc42v5964-510v mgfc42v5964-51 32dbm +210mhz may-02	PDF
MGFC42V5258 Abstract: GF-18 5.8GHz Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	mgfc42v5258 25deg gf-18 5.8ghz	PDF
MGFC42V6472A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc42v6472a item-51	PDF
MGFC42V5964 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964 5 .9 — 6.4GH z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The OUTLINE DRAW ING M G F C 4 2 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especailly designed fo r use in 5 .9 ~ 6.4 20.4 ± 0 .2 0 .8 0 3 + 0.008	OCR Scan	mgfc42v5964 15ghz 40ghz 41ghz	PDF
4433 fet Abstract: F4535 high power FET transistor s-parameters MGFC42V3436 VDS-10 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V3436 is an internally impedance-matched Unit: millimeters GaAs power FET especially designed for use in 3.4 - 3.6 24+/-0.3	Original	mgfc42v3436 4433 fet f4535 high power fet transistor s-parameters +1vds-10	PDF

MGFC42 Search Results

MGFC42 Datasheets (18)

MGFC42 Price and Stock

Abracon Corporation AMPMGFC-42.5000

Abracon Corporation AMPMGFC-42.5000T

Abracon Corporation AMPMGFC-42.5000T3

Mitsubishi Electric MGFC42V5964A-61

MGFC42 Datasheets Context Search

MGFC42V5867

MGFC42V5964A

MGFC42V5258

MGFC42V5867

MGFC42V7785A

PO32

MGFC42V3742

MGFC42V3742

GAAS FET AMPLIFIER f 10Mhz to 2 GHz

MGFC42V5964A

MGFC42V5964

MGFC42V5258

MGFC42V6472A

MGFC42V5964

4433 fet