MG25Q6 Search Results

Contextual Info: TO SHIBA TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE MG25Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

Contextual Info: T O SH IB A MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage

Contextual Info: T O SH IB A MG25Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG25Q6ES42

Contextual Info: TOSHIBA MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage

Contextual Info: T O SH IB A TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE m . a^ ^7 ^r HIGH POWER SWITCHING APPLICATIONS nX SILICON N CHANNEL IGBT ES 50A MOTOR CONTROL APPLICATIONS • • • • • t High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage

Contextual Info: T O SH IB A MG25Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES51A HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: T O SH IB A MG25Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

mg25q6es42

Abstract: SO120200
Contextual Info: TOSHIBA MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage

Contextual Info: T O S H IB A MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode

Contextual Info: T O SH IB A MG25Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M fi^ n fiF ^ R n A • Mr lap ta «v v m ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

Contextual Info: T O SH IB A MG25Q6ES42 TOSHIBA GTR MODULE M fn ? ^ n SILICON N CHANNEL IGBT f iF c ;z i? Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode

MG25Q6ES51A

Abstract: toshiba Igbts MG25Q6ES51
Contextual Info: TOSHIBA MG25Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

mg25q6es42

Contextual Info: MG25Q6ES42 U n it in m m HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 92.7J-Q.6 • T he E lectrodes a re Isolated from Case. • 6 IGUTs a re B u ilt Into 1 P ackage. • E nhancem ent-M ode • Low S a tu ra tio n V oltage : v C E sa t = 4 0V (M ax.)

igbt 25A toshiba

Abstract: MG25Q6ES42 Toshiba transistor Ic 100A
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.5µs Max. trr = 0.5µs (Max.)

Contextual Info: T O SH IB A MG25Q6ES51A TOSHIBA GTR MODULE • Mr SILICON N CHANNEL IGBT lar ta «v v ■ m a HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

MG25Q6ES50

Contextual Info: TOSHIBA MG25Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG25Q6ES50A

Abstract: P channel 1200v 25a IGBT
Contextual Info: TOSHIBA MG25Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6 ES50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG25Q6ES51

Abstract: MG25Q6ES
Contextual Info: TOSHIBA MG25Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: TOSHIBA TENTATIVE MG25Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tj’=0.3/^s Max. @ Inductive Load Low Saturation Voltage : v CE(sat) = 3-o v (Max.)

G25Q

Contextual Info: T O SH IB A M G25Q 6ES51 MG25Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

MG15J6ES40

Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
Contextual Info: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40