MRA - MFE823
Abstract: MFE823
Contextual Info: SILICONIX INC lflE D Ô5S473S O G m O H T MFE823 7 • CX'Sificonix incorporated 'T -Z l-X 'B P-Channel Enhancem ent-M ode M OS Transistor PRODUCT SUMMARY PART NUMBER V BR DSS (V) (m S) ■d (mA) PACKAGE -2 5 1 -3 0 TO-18 9(3 BOTTOM VIEW TO-18 MFE823 Performance Curves: MRA (See Section 7)
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5s473smfe823mra - mfe823 |
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electrometer
Abstract: electrometers
Contextual Info: designed fo r . S ilic o n ix MFE823 B enhancement-type p-channel MOSFET Performance Curves M RA See Section 5 . . • H igh-Input Im pedance Am plifiers BENEFITS • High Input Impedance I q s s =30 Femto Amp Typical • High Gain gfs = 1000 //mho Minimum
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-10maelectrometerelectrometers |
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MFE823
Abstract: Field-Effect Transistors "Field-Effect Transistors"
Contextual Info: MFE823 silicon SILIC O N P-CHANNEL P-CHANNEL MOS F IE L D -E F F E C T T R A N SIS T O R S MOS F IE L D -E F F E C T T R A N SIS T O R S Enhancement Mode (T yp e C) MOS Field-Effect Transistors designed for use in smoke detector circuits. • Low Gate Reverse Current —
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mfe823-10vdcfield-effect transistors |
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MFE823
Abstract: 3N163-64 3N163-64CHP MFE823CHP electrometer
Contextual Info: B S ilic o n ix MFE823 enhancem ent-type p-channel MOSFET designed fo r . . . • High-Input Performance Curves MRA See Section 5 B EN EFITS Im pedance A m plifiers • Sm oke Detectors Electrom eters pH M eters • = High Input Impedance I q s s 30 Femto Am p Typical
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mfe8233n163-643n163-64chpmfe823chp+1electrometer
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10VDC
Abstract: MAX584 2n4352
Contextual Info: M O T O R OL A SC XSTRS/R F 12E D | b3b?2S4 G0flt?M3 T | MFE823 CASE 22-03, STYLE 11 TO-18 TO-206AA M A X IM U M RATINGS Symbol Rating Value U nit • 25 Vdc Drain-Source Voltage Vos Drain-Gate Voltage Vd G ±10 Vdc Id 30 mAdc PD 300 1.71 T j. Tstg - 6 5 to +175
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mfe823o-206aa2n435210vdc+1max584
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electrometer
Abstract: electrometers MFE823
Contextual Info: MMmOL APPLICATIONS • • • • High-Input Impedance Amplifiers Smoke Detectors Electrometers pH Meters M FE 823 Enhancem ent Mode P-Channel MOSFET PIN CONFIGURATION CHIP TOPOGRAPHY 1503 FEATURES • High Input Impedance Iq ss - 30 Femto Amp Typical • High Gain
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mfe823mfe823/wmfe823/delectrometer+1electrometers
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050lmmbd914lbas16lbal99l+16mbav70lmbav99lmbav74bd2835xlmbd2836xlmmbd2837xlmmbf112lmfe521mmbf1122n3797 equivalentmfe131 equivalentmps5210bc557 sot238c448bc459cmfe211
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111iimz5558z5555z5556+11mz5557powec rm 1110rm 1100 powecmpc1000transistors jx 6822 ainverter welder 4 schematicsaa 14ztransistor si 6822stg 8810pl 15z diodegermanium transistor
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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transistors bc 557cbf366smd code 307cf199 transistor+62n5793bc413motorola zener diode marking code z7equivalent of transistor bc212 bc 214bc107c motorola2n555
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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AN73-1 fet
Abstract: AN73-1 9L05 siliconix AN73-7 Siliconix Application Note jpad100 jfet AN73 J174-7 VCR3P 2n Siliconix FET
Contextual Info: voltage-controlled resistor FETs designed for • • • H Siliconix P rformanc Curv _$ NT, PSA See Section t~CA, ~, NPA, Signal AHenuators • Small Filters • Amplifier Control • Oscillator Gain Amplitude Control • TO-18 MODIFIED TO-72 (MODIFIED)
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an73-1 fetan73-19l05siliconix an73-7+6siliconix application notejpad100jfet an73j174-7vcr3p2n siliconix fet
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E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
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ls422ls423ls424ls425+15ls426ls832ls833ls4391ls5911e112 jfetsiliconix e412npd5564jfet e300npd5566data sheet of fet bfw10e402 dual jfete430 jfete310 jfet nnpd5565
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siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
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j-23548k24123i39-40inz3766+1153-c-03siliconix fettransistor e112 fet n-channeljfet transistor replacement guide j201e112 jfetjfet bfw10 terminalsjfet bfw10 specifications4856a mosfettransistor e112 fetfets in balanced mixers ed oxnerequivalent components fet bfw10
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3N156
Abstract: 3N157
Contextual Info: MOTOROLA SC -CDIODES/OPTO]- 6 3 6 7 2 5 5 M O T O R O L A SC 34 DETJt.3L.75S5 003fl037 3 DIODES/OPTO 34C 38037 D FIELD-EFFECT TRANSISTORS DICE (continued) 2C4352 die no. LINE SOURCE — DFM123 This die provides performance equal to or better than that of
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003fl037dfm1232n43523n155+53n1563n157mfe8232c4352mmcs0123
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TIS88A equivalent
Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Contextual Info: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.
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20x40111x109tis88a equivalent2n3456 equivalent+8j411 fet2n5952 equivalent2n3820 equivalent2n5248 equivalentfet 2n43042n5245 equivalent2n4304 equivalent2n5454 equivalent
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P-Channel Depletion Mosfets
Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484
Contextual Info: MOSFETs Single Gate FIELD-EFFECT TRANSISTORS continued P-CHANNEL Enhancement MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel,
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2n54862n44162n4416a2n5245+113n128p-channel depletion mosfetsmosfet 2n37962n37972n3796mfe825mfe3002p-channel depletion mosfetdepletion mode mosfet 100 mhzmfe3003n5484
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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k2874244449silxhxe304 fetjfet transistor replacement guide j201+8bfq13e420 dual jfetjfet tis88siliconix fet design cataloge112 jfetjfet e300bfw10 jfet2n3686
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NPD5564
Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership
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integrau404lsu405lsu406ls841+15ls842ls421ls422ls423ls424npd5564npd5566bfy91imf39582n3050nf5458fairchild e212mp842j9100sst5638
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2N3609
Abstract: 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (S) Max (V) elN Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style P-Chann I Enhanc ment-Typ , (Cont'd) 5 10 15 20 25 30 TP0102N3 TPOS02N3
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tp0102n3tpos02n3tp0102n2tp0602n2+132n3609mfe8232n43523n2082n41202n40672n5548diode 600mnec 500t3sj11a3n1563n155to99 mosfet
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2N4360
Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
Contextual Info: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.
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mfe2001mfe2c04mfe2005mfe2006+16mfe2133mpf102mpf108mpf109mpf111mpf1122n43602n3459j411 fetsolitron 2n3821u1898e2n5906tis58mem5112n3920uc451
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e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.
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e420 dual jfetac digital voltmeter using 7107mps5010bf320+6jfet bf245 bf246 j201 2n3819mc6821icl7117 voltmetercookbook for ic 555hall marking code a04e304 fet
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