electrometer
Abstract: electrometers MFE823
Contextual Info: MMmOL APPLICATIONS • • • • High-Input Impedance Amplifiers Smoke Detectors Electrometers pH Meters M FE 823 Enhancem ent Mode P-Channel MOSFET PIN CONFIGURATION CHIP TOPOGRAPHY 1503 FEATURES • High Input Impedance Iq ss - 30 Femto Amp Typical • High Gain
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mfe823mfe823/wmfe823/delectrometer+1electrometers
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U421
Abstract: electrometer U422 U423 U424 U421 jfet JFET APPLICATIONS U425
Contextual Info: om noiL U421-U426 Monolitlc Dual N-Channel JF E T A PP LIC A TIO N S • Very High Input Impedance Differential Amplifiers • Electrometers • Impedance Converters PIN CONFIGURATION CHIP TOPOGRAPHY 6034 FEATURES • High Input Impedance Ig = 0.1 pA Maximum U421-3
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u421-u426u421-330/ialog10+8u421electrometeru422u423u424u421 jfetjfet applicationsu425
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electrometer
Abstract: U421-6 U422CHP U423CHP U425CHP U426CHP Siliconix "fet" Package TO-78
Contextual Info: B S ilic o n ix designed f o r . . . • Low Leakage FE T Input Op Amps B E N E FIT S : ■ pH Meters • Ultra-High Input Impedance ■ Electrometers • Good Voltage Gain • Low Noise TY PE PACK AG E P R IN C IP A L D E V IC E S Dual TO -78 Chip U421-6
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electrometeru421-6u422chpu423chp+4u425chpu426chpsiliconix "fetpackage to-78
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IFN424
Abstract: IFN425 IFN426 transistor B42 electrometers
Contextual Info: Databook.fxp 1/14/99 12:22 PM Page B-42 B-42 01/99 IFN424, IFN425, IFN426 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Very High Impedance Differential Amplifiers ¥ Electrometers Device Dissapation Derate 3.2 mW/°C to 50°C
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ifn424ifn425ifn426transistor b42+1electrometers
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2N4119
Abstract: 2N5902
Contextual Info: 2N4119A designed for H . S ilic o n ix Performance Curves NT See Section 5 • Ultra-High Input Impedance Amplifiers B E N E F IT S • Low Power Id S S < 9 ° mA 2 N 4 1 1 7 Electrometers pH Meters Smoke Detectors 2N4118A 2N4119 n-channel JFETs • Minimum Circuit Loading
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IFN423
Abstract: IFN421 IFN422 electrometers electrometer
Contextual Info: Databook.fxp 1/14/99 12:22 PM Page B-41 B-41 01/99 IFN421, IFN422, IFN423 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Very High Input Impedance Differential Amplifiers ¥ Electrometers Device Dissipation Derate 3.2 mW/°C to 50°C
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Contextual Info: 9-97 DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at Ta = 25'C • VERY HIGH INPUT IMPEDANCE DIFFERENTIAL AMPLIFIERS • ELECTROMETERS Device Dissipation Derate 3.2 mW/°C to 50°C Storage Temperature Range FN421, FN422, IFN423
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Contextual Info: B 42 9-97 IFN424, IFN425, IFN426 DUAL N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • VERY HIGH IMPEDANCE DIFERENTIAL AMPLIFIERS • ELECTROMETERS Absolute maximum ratings at TA = 25*C Device Dissapation Derate 3.2 mW/°C to 50°C Storage Temperature Range
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electrometer
Abstract: 7078-TRX-BNC 237-TRX-TBC 7078 electrometers Model 7078-TRX-TBC IEEE-4888 Keithley 2400 7078-TRX Keithley 237
Contextual Info: The Model 6514 Electrometer combines flexible interfacing capabilities with current sensitivity, charge measurement capabilities, resolution, and speed that are equal or superior to our earlier electrometers. The Model 6514’s built-in IEEE-488, RS-232, and digital I/O
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ieee-488rs-23261/2-digit214mm+11369mmelectrometer7078-trx-bnc237-trx-tbc7078electrometersmodel 7078-trx-tbcieee-4888keithley 24007078-trxkeithley 237
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electrometer
Abstract: 2N5902
Contextual Info: n-channel JFET H d e s ig n e d f o r . . . Ultra-High Input Impedance Amplifiers Electrometers S ilic o n ix B E N E F IT S : • pH Meters Sm oke Detectors ¡ALL DIMENSIONS tH MILLIMETERS! • Low Power l DS S < 90 MA 2N4117 High Input Impedance l G < 1 p A (2N5906-09)
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TRANSISTOR LD30
Abstract: KJ01 ctm 2s rilg u421u
Contextual Info: SDE J> D 68 IIFC 4A2bflflfl 0000438 75*3 U421, U422, U423, U424, U425, U426 7 - 3 1- 2 INTER F E T CORP DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • VERY HIGH INPUT IMPEDANCE DIFFERENTIAL AMPLIFIERS * ELECTROMETERS Absolute maximum ratings at 25°C freo-alr temperature.
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U422CHP
Abstract: U421 L144cj U422 U423 U424 AN-743 Package TO-78
Contextual Info: U426 U425 Ü424 U423 monolithic dual n-channel JFETs desicmedi f o r •V ery High Input Impedance I w l i . • .r • Ä E r sCürves BENEFITS •H ighGain = ^mho • • High Input Impedance I q = 0.1 pA Maximum U421-3 ,.,.r Differential Am plifiers Electrometers
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TELEDYNE PHILBRICK 1702
Contextual Info: & T E L O Y N E _ C OM PO N EN T S BÔE D • ÛT17bQH GQ0ba3a S H 7 ^ ~7 '/O 1702 5 Femtoampere Bias Current Operational Amplifier The 1702, with 5 femtoamp bias current 5 X 10"15A maxi mum, is designed to be used in circuits where extremely low error currents, low current noise, high input impedance, high
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electrometers
Abstract: electrometer 7078-TRX MIL-PRF-28800F class 4 sub preamp C1861
Contextual Info: 9:57 AM Page 139 Sub-Femtoamp Remote SourceMeter Instrument 6430 The Model 6430 Sub-Femtoamp Remote SourceMeter combines the voltage and current sourcing and measurement functions of Keithley’s popular SourceMeter and Source-Measure Unit SMU products with sensitivity, noise, and input
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electrometers
Abstract: MAX4162 MAX4162ESA MAX4162EUK MAX4163 MAX4163EBL MAX4163ESA MAX4164 Ionization Detectors
Contextual Info: 19-1195; Rev 3; 1/10 UCSP, Micropower, Single-Supply, 10V, Rail-to-Rail I/O Op Amps The MAX4162/MAX4163/MAX4164 are single/dual/quad, micropower operational amplifiers that combine an exceptional bandwidth to power consumption ratio with true rail-to-rail inputs and outputs. They consume a
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Femto Ammeter
Abstract: ICH8500 ICH8500A electrometer ICH8500ATV current measuring circuit ICH8500_A ammeter principle electrometers ICM8500
Contextual Info: Bienni S 3 IC H 8 5 0 0 /A Ultra Low B ias Current Operational Am plifier _ FEATURES GENERAL DESCRIPTION • Input diode protection • Input bias current less than 0.01 pA at all operating temperatures • No frequency compensation required • Offset voltage null capability
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2n4117 equivalent
Abstract: 2N5905 2N5902-9 2N5904 y33k 2N5902 2N5903 2N4117 2N5906 Siliconix Dual N-Channel JFETs
Contextual Info: matched dual n-channel JFETs B Siliconix Perform ance Curves NT See Section 5 . designed for BEN EFITS • Matching Characteristics Specified • D ifferen tial Am plifiers ■ High Input Impedance Am plifiers • High Input Impedance lG = 1 pA Max 2N 5906—9
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Contextual Info: 24 MHZ RAIL-TO-RAIL Dual Amplifiers with shutdown option AD8646/AD8647 Preliminary Technical Data FEATURES Shutdown current: 10 nA max Wide bandwidth: 24 MHz Slew rate: 12 V/ s Low noise: 8 nV/√Hz High output current: 150 mA Low input bias current: 1 pA
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ph meter circuit
Abstract: OP80G ph meter
Contextual Info: Ultra-Low Bias Current Operational Amplifier OP-80 ANALOG DEVICES FEATURES • Ultra-Low Bias Current: 300 femtoamps T y p .at +85°C 500 femtoamps T y p . at +125°C
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piezoelectric pressure charge amplifier
Contextual Info: LMC6042 LMC6042 CMOS Dual Micropower Operational Amplifier Literature Number: SNOS611C LMC6042 CMOS Dual Micropower Operational Amplifier General Description Features Ultra-low power consumption and low input-leakage current are the hallmarks of the LMC6042. Providing input currents
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electrometer
Abstract: 3N163 3N164
Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18
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21a sot23-5
Abstract: MAX4162 MAX4162ESA MAX4162EUK MAX4163 MAX4163ESA MAX4163EUA MAX4164 MAX4164ESD MAX6120
Contextual Info: 19-1195; Rev 0; 4/97 SOT23, Micropower, Single-Supply, Rail-to-Rail I/O Op Amps _Applications Battery-Powered Devices pH Probes Portable Equipment Low-Power, Low-Voltage Equipment Medical Instruments Ionization Detectors Cellular Phones
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rh10
Abstract: RH-1
Contextual Info: HIGH VOLTAGE, HIGH MEGOHM PRECISION FILM RESISTORS 1/8 WATT to 16 WATT RH SERIES Industry’s most precise high-voltage resistors! Available to 10 teraohm 1013Ω ! FEATURES r Standard temperature coefficients as low as ±25ppm (±10ppm available on limited value range).
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3N164
Abstract: 3N163
Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18
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