MBRA140T3 Search Results

marking b14 on semiconductor

Abstract: B14 diode on semiconductor 403B MBRA140T3 SMA MARKING 86 marking b14 diode b14 diode surface mount B14 SMA
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

diode schottky B14

Abstract: marking b14 diode
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRA140T3G, NRVBA140T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

schottky DIODE MOTOROLA B14

Abstract: Diode Motorola B14 Diode B14 Motorola
Contextual Info: MOTOROLA Order this document by MBRA140T3/D SEMICONDUCTOR TECHNICAL DATA Product Preview M BR A 140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1 AMPERES 40 VOLTS . . . em p lo ying th e S cho ttky B arrier principle in a large area m e ta l-to -s ilic o n

MBRA140T3G

Contextual Info: MBRA140T3G, NRVBA140T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

403B-01

Abstract: 100E6 MBRA140T3-D Motorola b4 motorola package marking for sma diodes 100E3 403B MBRA140T3 Motorola 406 schottky power rectifier MOTOROLA
Contextual Info: MOTOROLA Order this document by MBRA140T3/D SEMICONDUCTOR TECHNICAL DATA Product Preview MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1 AMPERES 40 VOLTS . . . employing the Schottky Barrier principle in a large area metal–to–silicon

MBRS340T3G

Abstract: MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc
Contextual Info: ONSEMI Part # MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRD835LT4G MBRM130LT1G MBRM140T1G MBRM140T3G MBRS1100T3G MBRS130LT3G MBRS140T3G MBRS260T3G MBRS340T3G MBRS360T3G MBRS540T3G MUR120RLG

MBRA140T3G

Contextual Info: TH97/10561QM MBRA140T3G IATF 0060636 SGS TH07/1033 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PRV : 40 Volts Io : 1.0 Ampere SMA 5.3 ± 0.35 4.2 ± 0.25 1.3 ± 0.2 FEATURES : * * * * * TW00/17276EM Very Low Forward Voltage Drop Highly Stable Oxidation Passivated Junction

marking code onsemi Diode B14

Abstract: marking b14 diode B14 marking code 403B 403D MBRA140T3 marking b14 on semiconductor
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

schottky DIODE MOTOROLA B14

Abstract: Diode Motorola B14 Motorola B14 motorola diode marking B14 100E3 403B MBRA140T3 Diode B14 Motorola
Contextual Info: MOTOROLA Order this document by MBRA140T3/D SEMICONDUCTOR TECHNICAL DATA Product Preview MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1 AMPERES 40 VOLTS . . . employing the Schottky Barrier principle in a large area metal–to–silicon

SMA CASE 403D-02 footprint

Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

403D

Abstract: MBRA140T3 MBRA140T3G b14 diode surface mount
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: Certificate TH97/10561QM MBRA140T3G Certificate TW00/17276EM SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PRV : 40 Volts Io : 1.0 Ampere SMA FEATURES : 4.4 ± 0.2 1.3 ± 0.2 Very Low Forward Voltage Drop Highly Stable Oxidation Passivated Junction Guardring for Stress Protection

100E3

Abstract: marking b14 diode
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

403D

Abstract: MBRA140T3 MBRA140T3G
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

B14 diode on semiconductor

Abstract: marking b14 diode marking b14 on semiconductor marking code onsemi Diode B14 403D MBRA140T3 SMA MARKING 86 marking code B14 B14 marking code diode MARKING CODE B14
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

95OC

Abstract: MBRA140T3 403D-01
Contextual Info: MBRA140T3 SURFACE MOUNT SCHOTTKY POWER RECTIFIER SMA Power Surface Mount Package SMA .employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

95OC

Abstract: MBRA140T3
Contextual Info: MBRA140T3 SURFACE MOUNT SCHOTTKY POWER RECTIFIER SMA Power Surface Mount Package .employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRA140T3G, NRVBA140T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

F06A diode

Abstract: "red LED Driver" capacitor 22PF dual resistor npn 500ma LED with 3v INPUT VOLTAGE LT3592 MSOP-10
Contextual Info: LT3592 500mA Wide Input Voltage Range Step-Down LED Driver with 10:1 Dimming DESCRIPTION FEATURES n n n n n n n n Wide Input Voltage Range Operation from 3.6V to 36V Resistor Adjustable 400kHz–2.2MHz Switching Frequency Shorted and Open LED Protected Internal Switch Current Sense Resistor

SAT INDUCTOR

Abstract: DO1608C-154 MBR0530 MBR0530T1 MIC2571 MIC2571-1BMM MIC2571-2BMM Motorola BOOST smps 594D156X0025C2T
Contextual Info: MIC2571 Micrel MIC2571 Single-Cell Switching Regulator Preliminary Information General Description Features Micrel’s MIC2571 is a micropower boost switching regulator that operates from one alkaline, nickel-metal-hydride cell, or lithium cell. The MIC2571 accepts a positive input voltage between 0.9V

NCN4555

Abstract: iso7816 sim SIMCARD Schematic ISO7816 NCN4555MN NCN4555MNG NCN4555MNR2 NCN4555MNR2G 3G system diagram j8 QFN16
Contextual Info: NCN4555 1.8V / 3V SIM Card Power Supply and Level Shifter The NCN4555 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller or MPU. A built−in LDO−type DC−DC converter makes the NCN4555