MA55M52 Search Results

SAA 7000

Abstract: 9J1A lfg-4 saa 5000
Contextual Info: 02E 07906 4855452 INTERNATIONAL RECTIFIER IO R D 'T ~ q 3 - Data Sheet NO. HU-Z.l05 in t e r n a t io n a l r e c t i f i e r DE | MA55M52 OOOTTOt. S | R30DF AND R30DFR SERIES 800-600 VOLTS RANGE REVERSE RECOVERY TIME 0.9/us 255 AMP AVG STUD MOUNTED SOFT FAST RECOVERY RECTIFIER DIODES

C-491

Contextual Info: International H R ectifier PD959 IRGKIN025M12 "CHOPPER LOW SIDE SWITCH IGBTINT-A-PAK |_ow conduction loss IGBT VŒ = 1200V lc = 25A • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail11 losses •Short circuit rated Vce ON <2.7V

Contextual Info: | , ,• I P D -5041 International IS2R Rectifier CPV364M 4U preliminary IGBT SIP MODULE Features • • • • UltraFast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes

Contextual Info: International ja g Rectifier HEXFET Power MOSFET • • • • • • 4 fl5 5 4 S 2 PD-9.457C INR QD1SS2L 334 IRFP440 INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

452 thyristor

Abstract: IRK E78996
Contextual Info: Bulletin 127132 rev. D 09/97 International IS R Rectifier IRK.71, .91 SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR NEWADD-A-pak Power Modules Features • Electrically isolated: DBC base plate ■ ■ 3500 VRUS isolating voltage Standard JE D EC package

Contextual Info: 4055452 International S Rectifier OOlSbMO t I S • PD-9.701A IRFR014 IRFU014 HEXFET Power M O S FE T • • • • • • • INR Dynamic dv/dt Rating Surface Mount IRFR014 Straight Lead (IRFU014) Available in Tape & Reel Fast Switching Ease of Paralleling

diode D83 004

Abstract: D83 - 004
Contextual Info: Bulletin 12081/A International S R e c tifie r s d 30on/ r s e r ie s STANDARD RECOVERY DIODES Stud Version Features • W id e c u rre n t ra n g e ■ H ig h v o lta g e ra tin g s up to 3 2 0 0 V ■ H ig h s u rg e c u r re n t c a p a b ilitie s ■ S tu d c a th o d e a n d s tu d a n o d e v e rs io n

Contextual Info: 4B5545E 0015B44 DTE * I N R International 'k ?r Rectifier IR L 520S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • PD-9.908 Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive

irf196

Abstract: IRD 10
Contextual Info: International is Rectifier MflSSMSa O O l S S m ‘m PD-9.839 IRFI9640G INTERNATIONAL RECTIFIER HEXFET® Pow er M O S F E T • • • • • • *INR Isolated Package High Voltage lsolat¡on= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel Dynamic dv/dt Rating

Contextual Info: P D - 9.1136 bitemational EUlRectifter IRGPC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V q e = 15V • Switching-loss rating includes all "tall" losses • Optimized for medium operating frequency 1 to

Contextual Info: International SRectifier P D - 2.223B 63CNQ. SERIES SCHOTTKY RECTIFIER 60Amp Major Ratings and Characteristics Characteristics If av Rectangular waveform V rrm If s m @ \£ tp = 5ps sine @ 30Apk, Tj = 125°C (per leg) Tj Desciption/Features 63CNQ. Units

1RF620S

Contextual Info: International k ?r Rectifier • PD-9.900 _ IRF620S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • 4A554S2 0014704 b4fi ■ INR Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching

47SB

Abstract: 600PE160 600PE180 TP 8370 600PE80 6425 ma 8920 600PE100 600PE120 600PE140
Contextual Info: INTERNATIONAL RECTIFIER 4T DeT| i|ÛS545a 00 04 7 5 4 Data Sheet No. PD-3.073 IN T E R N A T IO N A L R E C T IF IE R I R 940A RMS Hockey Puk Thyristors 600PE SERIES Description T he 6 0 0 P E series o f converter type hockey p u k thyristors use centre am plified gate junction technology. These devices with

1rf9530

Contextual Info: International k? r Rectifier HEXFET Pow er M O S F E T 4655452 □D14642 33E PD-9.320G IINR IRF9530 INTERNATIONAL RECTIFIER bSE D Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

Q02c

Contextual Info: P D -9 .1 5 6 8 B International I R Rectifier IRF7317 PRELIMINARY HEXFET Power M O S F E T • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier

Contextual Info: P D -5.044 International I R Rectifier PRELIMINARY CPV362M4U IGBT SIP MODULE UltraFast IGBT Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail" losses • H E X F R E D soft ultrafast diodes

IRC540 package drawing

Contextual Info: 4655452 International Rectifier 21T « I N R PD-9.592A IR C 540 _ INTERNATIO NAL R E C T IF IE R HEXFET Power MOSFET • • • • • • • 0D 14526 Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense 175°C Operating Temperature