MA2Z748 Search Results

Contextual Info: MA2Z748 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification Unit : mm 0.7±0.1 1.25±0.1 0.35±0.1 • Features 1 Reverse voltage DC Unit VR 20 V Repetitive peak reverse voltage V RRM 20 V Average forward current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z748 Silicon epitaxial planar type 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 Unit: mm 0.35±0.1 VR Repetitive peak reverse voltage

MA2Z748

Abstract: MA3X720 SC-76
Contextual Info: Schottky Barrier Diodes SBD MA2Z748 Silicon epitaxial planar type 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 Unit: mm 0.35±0.1 1 1.7±0.1 2 0.5±0.1 Parameter Symbol Rating Unit VR 20 V Repetitive peak reverse voltage

MA2Z748

Abstract: MA3X720 SC-76
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z748 Silicon epitaxial planar type 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 Unit: mm 0.35±0.1 1 1.7±0.1 2 0.5±0.1 Parameter

MA2Z7480G

Abstract: MA3X720
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z7480G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For super high speed switching For small current rectification ue pl d in an c se ed lud

MA2Z720

Abstract: MA2Z748
Contextual Info: Schottky Barrier Diodes SBD MA2Z748 Silicon epitaxial planar type Unit : mm • Low VF type of MA2Z720 • High rectification efficiency caused by its low forward-risevoltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z7480G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For super high speed switching For small current rectification • Package ■ Features

MA2Z7480G

Abstract: MA3X720
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z7480G Silicon epitaxial planar type For super high speed switching For small current rectification • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

Contextual Info: Schottky Barrier Diodes SBD MA2Z748 Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 0.35±0.1 1 1.7±0.1 2 0.5±0.1 Rating Unit VR 20 V Repetitive peak reverse-voltage VRRM 20 V Average forward current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z7480G Silicon epitaxial planar type For super high speed switching For small current rectification • Package ■ Features • Low VF type of MA3X720 • Low forward voltage VF and good rectification efficiency

MA2Z720

Abstract: MA2Z748
Contextual Info: Schottky Barrier Diodes SBD MA2Z748 Silicon epitaxial planar type Unit : mm • Low VF type of MA2Z720 • High rectification efficiency caused by its low forward-risevoltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z748 Silicon epitaxial planar type 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 Unit: mm 0.35±0.1 1 1.7±0.1 2 0.5±0.1 Parameter

MA2Z748

Abstract: MA3X720 MA720
Contextual Info: Schottky Barrier Diodes SBD MA2Z748 Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 0.35±0.1 1 1.7±0.1 2 0.5±0.1 Symbol Rating Unit VR 20 V Repetitive peak reverse-voltage VRRM 20

diode IR 100 2K

Abstract: diode marking 2k
Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA2Z748 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification Anode ● Low VF type of MA720 ● Low VF (forward rise voltage) with high rectification efficiency

MA2Z748

Abstract: 2103R
Contextual Info: MA2Z748 Schottky Barrier Diode SOD-323 • Low VF • High rectification efficiency caused by its low forward - rise - voltage VF • Optimum for high - frequency rectification because of its short reverse recovery time (trr) 1.35 1.15 1.10 0.80 0.40 1.80

MA2Z748

Abstract: MA3X720 SC-76
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z748 Silicon epitaxial planar type 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 Unit: mm 0.35±0.1 M Di ain sc te on na tin nc

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

S-8351A50MC-J3JT2G

Abstract: S-8351A33MC-J2ST2G S-8351C32UA S-835x S-8351A50MC-J3J-T2 s-8351c32ua-j6rt2g s-8351cxxma S-8351A30MC-J2PT2G S-8351A60MC-J3TT2G
Contextual Info: Rev.2.4_00 STEP-UP, BUILT-IN / EXTERNAL FET PFM CONTROL SWITCHING REGULATOR / SWITCHING REGULATOR CONTROLLER S-8351/8352 Series The S-8351/8352 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an oscillation circuit,

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

S-Mini

Abstract: SSMini s-mini 2-pin package
Contextual Info: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)