MA2H735 Search Results

Contextual Info: Schottky Barrier Diodes SBD MA2H735 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 8° 0.9±0.2 3.2±0.1 • Forward current (Average) IF(AV) = 1 A rectification is possible • Low forward voltage: VF < 0.50 V

MA2H735

Contextual Info: Schottky Barrier Diodes SBD MA2H735 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 • Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition • Low VF (forward voltage) type: VF > 0.5 V（at IF = 1 A）

MA2H735

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2H735 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 M Di ain sc te on na tin nc ue e/ d 2 0.9±0.2 Unit: mm For high frequency rectification 8° ue pl d in an c

MA2H735

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2H735 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 8° 0.9±0.2 3.2±0.1 • Forward current (Average) IF(AV) = 1 A rectification is possible

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2H735 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 3.8±0.2 8° M Di ain sc te on na tin nc ue e/ d 3.2±0.1

Contextual Info: Schottky Barrier Diodes SBD MA2H735 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 8° 0.9±0.2 3.2±0.1 • IF(AV) = 1 A rectification is possible • Low forward voltage: VF < 0.50 V (at IF = 1 A)

MA2H735

Contextual Info: Schottky Barrier Diodes SBD MA2H735 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 8° 0.9±0.2 3.2±0.1 • IF(AV) = 1 A rectification is possible • Low forward voltage: VF < 0.50 V (at IF = 1 A)

MA2H735

Abstract: mini-power package
Contextual Info: Schottky Barrier Diodes SBD MA2H735 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 • Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition • Low VF (forward voltage) type: VF > 0.5 V（at IF = 1 A）

Contextual Info: MA111 Schottky Barrier Diodes SBD MA2H735 Silicon epitaxial planer type Unit : mm For high-frequency rectification 3.2±0.1 0 to 0.05 Small and thin half new mini-power package ● IF(AV)=1A rectification possible 2 1 1.85±0.2 Low VF (forward voltage) type : VF < 0.5V(at IF=1A)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA716

Abstract: MA7D50 ma741 MA10799
Contextual Info: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters