MA167 Search Results

MA167

Abstract: MA166 Matsushita MA165 MA165 MA2C165 MA2C166 MA2C167
Contextual Info: Switching Diodes MA2C165 MA165 , MA2C166 (MA166), MA2C167 (MA167) Silicon epitaxial planar type For switching circuits Unit: mm • Features • Short reverse recovery time trr • Small terminal capacitance Ct ■ Absolute Maximum Ratings Ta = 25°C Reverse voltage

MA166

Abstract: MA165 MA167 MA2C165 MA2C166 MA2C167 MA165 Panasonic
Contextual Info: Switching Diodes MA2C165, MA2C166, MA2C167 MA165, MA166, MA167 Silicon epitaxial planar type Unit : mm For switching circuits • Features • Short reverse recovery time trr • Small terminal capacitance, Ct 2.3±0.3 2.2±0.3 0.2 max. Parameter Reverse voltage

MA166

Abstract: PANASONIC MA2C167 MA165 MA167 MA2C165 MA2C166 MA2C167 MA165 TA
Contextual Info: Switching Diodes MA2C165, MA2C166, MA2C167 MA165, MA166, MA167 Silicon epitaxial planar type Unit : mm For switching circuits φ 0.45 max. COLORED BAND INDICATES CATHODE • Small terminal capacitance, Ct 1 0.2 max. • Short reverse recovery time trr 13 min.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA2C165 (MA165), MA2C166 (MA166), MA2C167 (MA167) Silicon epitaxial planar type For switching circuits Unit: mm • Features • Short reverse recovery time trr • Small terminal capacitance Ct

Matsua MA165

Abstract: MA165 MA2C165 MA166 MA167 MA2C166 MA2C167
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA2C165 (MA165), MA2C166 (MA166), MA2C167 (MA167) Silicon epitaxial planar type For switching circuits Unit: mm M Di ain sc te on na tin nc ue e/ d • Features ue pl d in an c

MA166s

Abstract: MA165 MA166
Contextual Info: 2SK1406 Switching Diodes MA165, MA166, MA167 Silicon epitaxial planer type Unit : mm For switching circuits φ0.45 max. Small capacity between pins, Ct 2.2±0.3 ● Parameter Symbol Rating MA165 Reverse voltage DC MA166 Repetitive peak Unit 35 VR 50 MA167

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA2C165 (MA165), MA2C166 (MA166), MA2C167 (MA167) Silicon epitaxial planar type For switching circuits Unit: mm • Features M Di ain sc te on na tin nc ue e/ d • Short reverse recovery time trr

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

MA177

Abstract: MA156 MA160A 610F 610P MA153 MA153A MA154WK MA155WK MA157A
Contextual Info: * fi m s & Vr r h Vr I FM T °C (V ) (V ) (m A) (m A) ty p 0 .5 0. 5 0. 5 0. 5 0. 5 1. 1. 1. 1. 1. 100 100 100 100 100 0. 0. 0. 0. 025 35 75 35 75 15 2 2 2 2 2 3 3 3 3 2. 2 4 225 225 200 225 225 100 100* 100* 100 100 0. 5 0. 5 100 100 100 100 100 0. 025

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

qed234

Abstract: QED422
Contextual Info: rsra AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED422/423 PACKAGE DIMENSIONS The QED42X is an 880nm AIGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package. i_.190 4.83 _j REFERENCE SURFACE FEATURES 0.030 (0.76) NOM CATHODE .800 (20.3)

MA156

Abstract: 154wa MA150 S-Mini A152W MA1015 MA165 MA185
Contextual Info: • Switching Diodes Line-up Surface Mount T y p e SS-Mini Type 2 Pin (D78) SS-Mini Ä , (D2| S-Mini Type (2 Pin) (D3) S-Mini Type (3 Pin) (D 5) S-Mini Type {4 Pin) (D7) S-Mini Type (6 Pin) (DIO) MA10100 Mini Type (3 Pin) (D12) Glass H o le -th ro u g h ty p e

MA154WK

Abstract: MA154WA MA156 MA182 MA185
Contextual Info: • Switching Diodes Line-up Hole-through type Surface Mount Type SS Mini Type 2 Pin (078) SS Mini Type (3 Pin) (D2) S Mint Type (2 Pin) (D3) S Mini Type (3 Pin) (D5) S Mini Type (4 Pin) (D7) S Mini Type (6 Pin) (DIO) Mini Type (3 Pin) (D12) Mini Type (4 Pin)

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

Contextual Info: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED121/122/123 DESCRIPTION PACKAGE DIMENSIONS T h e Q ED 12X is an 880 AIGaAs LED encapsulated in a clear, peach tinted, plastic T-1% package. FEATURES • Tight production E- distribution. ■ Steel lead fram es for im proved reliability in solder

Contextual Info: Diodes • Silicon Diodes Switching Vr Type No. (V ) If Ir * Ir (AV) max. (nA) (mA) CD max. *typ. (pF) trr max. (ns) Package Vr Type No. (V ) N o. If Ir * Ir (av) max. (nA) (mA) Co max. *typ. trr max. (ns) Package No. (P F ) MA111 « 80 100 100 1.2 3 S Mini (2 pins)

MA155WK

Abstract: MA156 MA177 MA160A 610F 610P MA153 MA153A MA154WK MA157A
Contextual Info: * fi m s & Vrrh Vr I FM T V (V) (mA) (°C ) JIÌ 15 iS] # £ io, I f * (mA) VFinax I fsm (°C ) (A) <°C) ÎÊ m 15 f t # t í $ t r r (ns) C t(p F ) iRtnax ( * J i s) IF(m A ) T C C ) (u A) Vr (V) T (°C ) typ max 1. 1. 1. 1. 1. 100 100 100 100 100 0. 0.

MA177

Abstract: MA156 MA160A 610F 610P MA153 MA153A MA154WK MA155WK MA157A
Contextual Info: * fi m s & Vr r h Vr I FM T JIÌ £ io , I f * V (V) (mA) (°C ) MA155ffA tô T fô T fö T 40 80 40 40 80 40 80 40 40 80 200 200 225 225 225 100* 100* 100* 100* 100* 0. 5 0. 5 0. 5 MA155WK MA156 MAI 57 MAI 57 A MAI 58 të T fô T fâ T fâ T fô T 80 40

QEE122

Abstract: QEE123
Contextual Info: OPTOELECTRONICS AIGaAs INFRARED EMITTING DIODE QEE122/123 PACKAGE DIMENSIONS DESCRIPTION The QEE12X is an 880 nm AIGaAs LED encapsulated in a wide angle, dark green, plastic sidelooker shell package. FEATURES • Tight production E0 distribution. ■ Steel lead frames for improved reliability in solder

Contextual Info: ÆÜI AIGaAs INFRARED EMITTING DIODE OPTDELECTROHICS QED121/122/123 DESCRIPTION PACKAGE DIMENSIONS T h e Q E D 1 2 X is an 8 8 0 A IG a A s L E D e n c a p s u la te d in a c le a r, p e a c h tin ted , plas tic T-13/4 p a c k a g e . FEATURES • T ig h t p ro d u c tio n Ee d istrib u tio n .

MA154WA

Abstract: MA162 MA177 MA10152D MA171 ma27q MA27 MA27T Bta MA10152K MA1015
Contextual Info: Diodes I Silicon Diodes Switching Type No. V If r (mA) max. (nA) * I r (AV) (V ) Ir CD max. *typ. (pF) Co trr max. (ns) Package No. Type No. V If Ir (mA) max. (nA) max. * typ. (PF) r * I r (a v ) (V ) trr max. (ns) Package No. S M in i (2 pins) D3 M A176W K

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

diode cross reference 1s1555

Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Contextual Info: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,

nred-61

Abstract: NRED 61 NRED FRS transceiver circuit diagram tr/NRED 61 AT76C551 LQFP-176 MA15 MA17 MA18
Contextual Info: Features • Implements Bluetooth Specification on Short Distance Wireless Communication in 2.4 GHz ISM Band • Provides 1 Mbps Aggregate Bit Rate • Supports Frequency Hopping Spread Spectrum Physical-layer Interface to Dedicated Transceiver with Frequency Hopping Algorithm Implemented in Hardware