diodos
Abstract: R024M R082F 1S963 1SS53 RD27E 5w r010j r010j RD27F RD100E
Contextual Info: TT* KJ Dioaes i — • Zonor D iod os DHO C o nstruction P lan ar Typo • S w itch in g D iod os V r (V) 30 50 75 30 50 75 Typo No. 1S963 1S954 1S955 1SS53 1SS54 1SS55 lo (mA) 100 200 200 100 100 100 P -0 .4 W • Tw in Diodas Typo No. 152835 152836 152837
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1s9631s9641s9551ss53+141ss541ss55rd10mrd11mrd12mrd13mdiodosr024mr082frd27e5w r010jr010jrd27frd100e
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1S953
Abstract: 1s954 1S955 NEC 1S953
Contextual Info: NEC S IL IC O N S W IT C H IN G D IO D ES BICimM KVKE 1S953,1S954,1S955 HIGH SPEED SW ITCHING SILICON EPITAXIAL DIODES DESCR IPTIO N The 1S953, 1S954 and 1S955 are silicon epitaxial diodes designed for high speed switching applications. FEA TU R ES PACKAGE D IM E N S IO N S
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diode cross reference 1s1555
Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Contextual Info: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,
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do-351s15551s15881ss104+161s15531s15541s953ma1611s15861s1587diode cross reference 1s1555diode cross reference 1s2473ips3021ss2111s2473 diode equivalent1s2473 diodetoshiba diode do-411s1555 diode1ss2021ss153
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1N4447-A
Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536
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marking code 62z
Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX
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hvd141/142hzu16hzu10hzu18+16hzu11hzu20hzu12hzu22hzu13hzu24marking code 62zphilips surface mount zener diode v6marking 68m sot 23-51s2473 equivalentdiode rohm 3pin marking a7ips302marking 62z sot23diode s4 68a1ss81 diode equivalent1s2473 diode equivalent
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2SA1464
Abstract: 1S955 2SC3739
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE 2S A 1464 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High f T : f T = 4 0 0 M H z 2.8 ± 0.2 • Complementary to 2S C 3739
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2sk2500
Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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c11178jjcv0if0012c11178jjcv0ifmil-hdbk-217milmil10100+11mil-hdbk-217fit2sk2500upc1037haupc648c2sk927nec 2sk2500upd5201gupa64haupd6360c2sh24n13t1
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861
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1S955
Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be
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1S955
Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be
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1S955
Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be
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RD13M
Abstract: RD2.4M 1SS53 zener rd9.1eb
Contextual Info: N E C ELECTRONICS INC E Diodes S=IC D ~'r 9m •ÈÜ t>427555 O D D b l D E VR V 30 50 75 30 50 75 lo (mA) 100 200 200 100 100 100 VR(V) '30 50 30 50 I f (mA) 150 (100) 150 (100) 150 (100) 150 (100) P = 0.4W Common Anode Common Cathode Common • Zener Diodes (Mini-Mold Type)
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1S955
Abstract: IC 1458 2SA1458 2SC3731 cb-40 nec
Contextual Info: PNP SILICON TRANSISTOR 2SA1458 DESCRIPTION The 2SA1458 is designed for general purpose amplifier and high PACKAGE DIMENSIONS speed switching applications. in millimeters inches FEATURES • 4 .2 MAX. (0.165 MAX.) High Frequency Current Gain. • High Speed Switching.
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transistor NEC 2SK2500
Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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mil-hdbk-217c11178ejcv0iftransistor nec 2sk2500nec 2sk2500+82sk2500n13t12sk2500 equivalentupc1037haupc648c2sh252sk2500 transistor2sh24
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Lem LT 300 - t
Contextual Info: SILICON TRANSISTOR 2 S A 1 4 6 4 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATU RES P A C K A G E DIMENSIONS in m illim e te rs • H ig h f T : f T = 4 0 0 M H z 2-8±0.2 • C o m p lem en tary to 2 S C 3 7 3 9
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1S955
Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114fd6666 diodediode by1001n4q07ba100 diodeby164bb139bay38diode aa1191s184 diode1n82
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bt type 47 relay
Abstract: MR62-12USB 1S955 MR62 relay BT 47 Relay MR62 MR62-24USB BT type 47 MR62-48u MR622
Contextual Info: DPDT Signal Relay • DIL package ■ BT type 47 approved ■ 1500V FCC surge between coil and contacts and adjacent contacts ■ Fully sealed for immersion cleaning ■ Bifurcated crossbar contacts for high reliability ■ UL/CSA approved MR62/47 Part Numbers
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mr62/47mr62-4mr62-9usbmr62-12usb+10mr62-24usbmr62-48usb1s955bt type 47 relaymr62 relaybt 47 relaymr62bt type 47mr62-48umr622
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1N4532
Abstract: 1N4448-A 1N4446 1N4447 1N4448 1N4449 1N4450 1N4454 1N4531 1N4533
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536
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1N4532
Abstract: 1S954 1N4536 1N4446 1N4447 1N4448 1N4449 1N4450 1N4454 1N4531
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10db2p10db4p10db6p180b6a+10t35wtransistor kt 606a65e9 transistorsr 6863 d2sc965cs9011sr1k diodekt850transistor st25atransistor 130001 8d
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1S955
Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be
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1S955
Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be
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