RD10E Search Results

RD9A

Abstract: S51A RD10E RD10L RD11J RD11JS RD11S
Contextual Info: 252- - y *i-n& m RD9. RD9. RD9. RD9. m . ÎJ US IK 1L 1M R D 9 .IP R D 9 . IS RD9.1UJ RD9. 1 UM RD9A RD9D RD10E R010BS RDIOF RDIOFM RDIOJ RD10 J S RD10K RD10L RD10M RD10P RD10S RD10ÜJ RD10UM RB11A R D I ID RD11E R D IIE S RD I IF R D llF M RD11J RDUJS RDI IK

RD9A

Abstract: RD10E RD10L RD11J RD11JS RD11S
Contextual Info: - 252- m RD9. ÎJ RD9. U S RD9. IK RD9. 1L m . 1M RD 9.IP RD 9.IS RD9.1UJ RD9. 1 UM RD9A RD9D RD10E R010BS RDIOF RDIOFM RDIOJ RD10 J S RD10K RD10L RD10M RD10P RD10S RD10ÜJ RD10UM RB11A RDI ID RD11E RDIIES RDI IF RDllFM RD11J RD U JS RDI IK RDI IL RDI IM RDllP

RD9A

Abstract: RD10E RD10L RD11J RD11JS RD11S trn 1p
Contextual Info: - 252- y *i-n& m RD9. ÎJ RD9. U S RD9. IK RD9. 1L m . 1M RD 9.IP RD 9.IS RD9.1UJ RD9. 1 UM RD9A RD9D RD10E R010BS RDIOF RDIOFM RDIOJ RD10 J S RD10K RD10L RD10M RD10P RD10S RD10ÜJ RD10UM RB11A RDI ID RD11E RDIIES RDI IF RDllFM RD11J RD U JS RDI IK RDI IL

RD9A

Abstract: RD10E RD10L RD11J RD11JS RD11S oa 1160 RD9D
Contextual Info: - 252- y *i-n& m RD9. ÎJ RD9. U S RD9. IK RD9. 1L m . 1M RD 9.IP RD 9.IS RD9.1UJ RD9. 1 UM RD9A RD9D RD10E R010BS RDIOF RDIOFM RDIOJ RD10 J S RD10K RD10L RD10M RD10P RD10S RD10ÜJ RD10UM RB11A RDI ID RD11E RDIIES RDI IF RDllFM RD11J RD U JS RDI IK RDI IL

RD9A

Abstract: RD10E RD10L RD11J RD11JS RD11S
Contextual Info: - 252- m RD9. ÎJ RD9. U S RD9. IK RD9. 1L m . 1M RD 9.IP RD 9.IS RD9.1UJ RD9. 1 UM RD9A RD9D RD10E R010BS RDIOF RDIOFM RDIOJ RD10 J S RD10K RD10L RD10M RD10P RD10S RD10ÜJ RD10UM RB11A RDI ID RD11E RDIIES RDI IF RDllFM RD11J RD U JS RDI IK RDI IL RDI IM RDllP

zener diode rd20e b2

Abstract: diode zener 1N 398 zener diode B3 Zener Diode B1 9 zener diode rd13e zener diode B5 RD6.2E zener diode rd39e b5 RD6.8E NEC Zener diode RD3.0E
Contextual Info: DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE DO-35 NEC Type RD2.0E to RD200E Series are planar type zener diode in the PACKAGE DIMENSIONS (in millimeters) popular DO-35 package with DHD (Double Heatsink Diode) construction φ 0.5 25 MIN.

RD9A

Abstract: RD9D RD10E RD10L RD11J RD11JS RD11S
Contextual Info: 252- - y * i - n & tV ñ. m iz m £ £ p Vz [z Z z a a j: V L A ? ¡A fift ¡fe Vz <0 n Í& Í/ L Zzkm ax Ig m a x f O f # f m (m W) 400 (n A ) m in RD9. Î J a n RD9. U S a n 400 8 .5 6 RD9. IK a n 400 8. 56 typ m ax íz (m A ) (ft) I z (m A ) 5 ÍQ )

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

diodos

Abstract: R024M R082F 1S963 1SS53 RD27E 5w r010j r010j RD27F RD100E
Contextual Info: TT* KJ Dioaes i — • Zonor D iod os DHO C o nstruction P lan ar Typo • S w itch in g D iod os V r (V) 30 50 75 30 50 75 Typo No. 1S963 1S954 1S955 1SS53 1SS54 1SS55 lo (mA) 100 200 200 100 100 100 P -0 .4 W • Tw in Diodas Typo No. 152835 152836 152837

zener diode ab

Abstract: 3ES 42 Ab zener RD10ES RD11ES RD12ES RD13ES RD15ES RD39ES zener 2
Contextual Info: TH97/10561QM RD2.0ES SERIES TW00/17276EM IATF 0060636 SGS TH07/1033 ZENER DIODES DO - 34 Glass VZ : 2.0 - 37.5Volts PD : 400 mW 1.00 25.4 min. 0.078 (2.0 )max. FEATURES : * High reliability * Low leakage current * Suitable for 5mm - pitch high speed automatical

RD12E B1

Abstract: rd2.4e zener rd9.1esb2
Contextual Info: SIYU R RD_EB Series 特征 Features DO-35 Glass •反向漏电流小。 Low reverse leakage max. 0.52 ·齐纳击穿阻抗低。 low zener impedance ·最大功率耗散500mW。 maximum power dissipation of 500 mW min. 27.5 ·高稳定性和可靠性。 High stability and high reliability

marking AB2

Abstract: diode zener 1N 398 nec 2563 7es marking RD15ES RD10ES RD11ES RD12ES RD13ES RD16ES
Contextual Info: DATA SHEET ZENER DIODES RD2.0ES to RD39ES 400 mW DHD ZENER DIODE DO-34 DESCRIPTION NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW.

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

RD11EB3

Abstract: RD5.1EB3 rd11eb diode RD15EB3 RD9.1EB2 RD10EB2 RD4.3EB RD5.1EB zener rd5.6b zener diode rd13e
Contextual Info: RD2.0E~RD200E ZENER DIODES Features • DHD Double Heatsink Diode Construction • Vz: Applied E24 standard (RD130E to RD200E: 10 volts step). • DO-35 Glass sealed package. Applications Circuits for Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc.

10EB2

Contextual Info: DO-35Zwter Dtade* 500 mW Electrical C h aracteristics (At Ta=25°C, U n less Otherw ise Specified) Type No. rZ T ^ZT min nom (V) 'z T at l^ at max max (Ohm) Temp. Coeff. of Z 3ner Voltac e 25°C typ max (mA) (%/°C) (Ohm) rZK 'z K a* 'z k (mA) Ta max (MA)

rd11eb diode

Abstract: 7EB2 RD12EB3 RD6.8EB2 rd3.0eb2 RD7.5EB1 RD20E RD10EB2 RD5.1EB3 RD10EB
Contextual Info: RD2.0E~RD200E ZENER DIODES Features • DHD Double Heatsink Diode Construction • Vz: Applied E24 standard (RD130E to RD200E: 10 volts step). • DO-35 Glass sealed package. Applications • Circuits for, Constant Voltage, Constant Current Wave form clipper, Surge absorber, etc.

zener diode RD2.2S

Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
Contextual Info: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ

Contextual Info: RD2.0ES SERIES ZENER DIODES DO - 34 Glass VZ : 2.0 - 37.5Volts PD : 400 mW FEATURES : 1.00 25.4 min. 0.078 (2.0 )max. * High reliability * Low leakage current * Suitable for 5mm - pitch high speed automatical insertion * Pb / RoHS Free 0.118 (3.0) max. Cathode

rd11eb diode

Abstract: RD7.5EB1 RD5.6EB3 RD11EB3 zener diode rd20e b2 RD20E B2 Zener RD10EB2 RD6.2EB2 RD5.1EB3
Contextual Info: RD2.0E~RD200E ZENER DIODES Features • DHD Double Heatsink Diode Construction • Vz: Applied E24 standard (RD130E to RD200E: 10 volts step). • DO-35 Glass sealed package. Applications • Circuits for, Constant Voltage, Constant Current Wave form clipper, Surge absorber, etc.

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

ZENER RD15E B1

Abstract: RD10E RD11E RD120E RD12E RD13E RD15E RD39E RD2.4E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NEC C 324 C

Abstract: marking 222 zener diode MARKING AB2 zener diode ab RD10ES2 7es marking NEC zener diode 35 series RD11ES zener rd9.1esb2 RD15ES
Contextual Info: DATA SHEET ZENER DIODES RD2.0ES to RD39ES 400 mW DHD ZENER DIODE DO-34 DESCRIPTION NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW.

RD13M

Abstract: RD2.4M 1SS53 zener rd9.1eb
Contextual Info: N E C ELECTRONICS INC E Diodes S=IC D ~'r 9m •ÈÜ t>427555 O D D b l D E VR V 30 50 75 30 50 75 lo (mA) 100 200 200 100 100 100 VR(V) '30 50 30 50 I f (mA) 150 (100) 150 (100) 150 (100) 150 (100) P = 0.4W Common Anode Common Cathode Common • Zener Diodes (Mini-Mold Type)