M628032 Search Results

m628032

Abstract: SOJ28 1370E
Contextual Info: M628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE 32K x 8 CMOS FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 12, 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ and DIP, 300 mil PACKAGES 28 28 1 1 PSDIP28 PS DESCRIPTION

Contextual Info: XZ7 SG S-TH O M SO N * IM. HD»IHI miS !0 §i M628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE • 32K x 8 CMOS FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 12,15,20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mil

B628

Contextual Info: M628032 256K 32K x 8 VERY FAST SRAM WITH OUTPUT ENABLE DATA BRIEFING 32K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 12, 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ and DIP, 300 mil PACKAGES 28 28 1

Contextual Info: M628032-20E1 1/2 IL08D C-MOS 256 K (32,768 x 8)-BIT SRAM —TOP VIEW— 10 A14 IN VDD 28 1 9 8 A12 IN 2 27 W IN 7 6 A7 IN 3 26 A13 IN 5 4 A6 IN 4 25 A8 IN 3 25 A5 IN 5 24 A9 IN 24 21 A4 IN 6 23 A11 IN 23 2 A3 IN 7 22 G IN 26 1 A2 IN 8 21 A10 IN A1 IN 9 20 E IN

AC w

Contextual Info: /= T ^ 7 # S C S -TH O M S O N M628032 ¡ M 0 ^ iŒ © '? [ E M D ê § VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE • 32K x 8 CMOS FAST SRAM with OUTPUT EN­ ABLE ■ EQUAL CYCLE and AC C ESS TIMES: 12, 15, 20ns ■ LOW Vcc DATA RETENTION: 2V

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

TOP SIDE MARKING M27C512

Contextual Info: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

M27C512 SGS-THOMSON

Abstract: M2201 ST93C46
Contextual Info: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

Contextual Info: Æ7 SGS-1H0MS0N ß _ [U fê W D M * 7 £ M 628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE • 32K x 8 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 12, 15, 20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mil PACK­

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

Contextual Info: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

M628032

Contextual Info: rZ J SGS'THOMSON ^ 7 # EjlD»[llLll @ (Ma(@i M 628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE • 32K x 8 CMOS FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIM ES: 12,15, 20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mil

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

misplaced Wire Bonds

Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
Contextual Info: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7

"Lookaside Cache"

Contextual Info: / T T SCS-THOMSON TA125 TECHNICAL ARTICLE Synchronous Burst SRAM for secondary CACHE systems Ricky Tuttle SGS-THOMSON Microelectronics Carrollton, USA The advent of high speed microprocessors and the requirement for high performance systems has opened the door to the Fast SRAM FSRAM mar­

MK45H14

Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
Contextual Info: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

MK48T87B24

Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Contextual Info: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W