M48Z2M1Y Search Results

Contextual Info: M48Z2M1 M48Z2M1Y SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 16 Mb 2Mb x 8 ZEROPOWER SRAM PR ELIM IN A R Y DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the

a20 Schottky diode st

Abstract: M48Z2M1V M48Z2M1Y up 5135 Zeropower
Contextual Info: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

M48Z2M1

Abstract: M48Z2M1Y a20 Schottky diode st
Contextual Info: M48Z2M1 M48Z2M1Y 16 Mbit 2Mb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT

Contextual Info: M48Z2M1 M48Z2M1Y SGS-THOMSON 16 Mb 2Mb x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER

up 5135

Contextual Info: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

Contextual Info: M48Z2M1 M48Z2M1Y SCS-THOMSON 16 Mb 2Mb x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT

a20 Schottky diode st

Contextual Info: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

M48Z2M1V

Abstract: M48Z2M1Y
Contextual Info: M48Z2M1Y M48Z2M1V 5V or 3.3V, 16 Mbit 2Mb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

M48Z2M1V

Abstract: M48Z2M1Y
Contextual Info: M48Z2M1Y M48Z2M1V 5V or 3.3V, 16 Mbit 2Mb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE

M48Z2M1

Abstract: M48Z2M1Y
Contextual Info: M48Z2M1 M48Z2M1Y 16 Mb 2Mb x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT

Contextual Info: M48Z2M1 M48Z2M1Y S G S -T H O M S O N n i ii5 in i * r a ( § s 16 Mb (2Mb x 8 ZEROPOWER® SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the

M48Z2M1

Abstract: M48Z2M1Y a20 Schottky diode st
Contextual Info: M48Z2M1 M48Z2M1Y 16 Mbit 2Mb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT

M48Z2M1

Abstract: M48Z2M1Y
Contextual Info: M48Z2M1 M48Z2M1Y 16 Mbit 2Mb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE ABSENCE OF POWER

M48Z2M1

Abstract: M48Z2M1Y
Contextual Info: M48Z2M1 M48Z2M1Y 16 Mb 2Mb x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT

SOH28

Abstract: ic mt 1628 NVRAM STMicroelectronics date CODE so-8 soic date code stmicroelectronics Zeropower ram M48Z m48t35 STMicroelectronics PRODUCT code date m48 M48Z129V M48Z18
Contextual Info: Non-volatile RAMs Selection guide September 2007 www.st.com/nvram ZEROPOWER NVRAMs • ■ Battery backed SRAM 16 Mbit to 16 Kbit Density 16 Mb 2 Mx8 4 Mb (512 Kx8) 1 Mb (128 Kx8) 256 Kb (32 Kx8) 64 Kb (8 Kx8) 16 Kb (2 Kx8) Part number VCC [V] M48Z2M1Y

Contextual Info: 5 7 . M48Z2M1 M48Z2M1Y SGS-THOMSON [M D M [iL [iO T M O (§ S 16 Mb (2Mb x 8 ZERO PO W ER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER

ST L1117

Abstract: ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905
Contextual Info: Technology for Innovators TM Standard Linear Products Cross-Reference Including Amplifiers, Comparators, Timers, Peripheral Drivers, Power Management Controllers, References, Regulators, Supervisors, Shunts, Transmitters and Receivers INTERFACE COMPARATORS

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

M48Z2M1

Abstract: M48Z2M1Y
Contextual Info: w , M48Z2M1 M 48Z 2M 1Y S G S -T H O M S O N k7 #» RitlDÊlMIlilLIKËinSMQtÊS 16 Mb 2Mb X 8 ZEROPOWER SRAM PR ELIM IN A R Y DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

TSOP32 FOOTPRINT

Abstract: NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V
Contextual Info: Non-Volatile RAMs KEEP TIME, PROTECT DATA NVRAM products offer fast non-volatile memory solutions up to 16 Mbit density using battery backed SRAM, in both surface mount and through-hole packages. Integrated features include battery and crystal, real time clock, watchdog timer, power-on reset, square wave

M48128Y

Abstract: ds1245y DS1225Y
Contextual Info: De usili • - S i1 ! i : i ; : í ; í ! u c í í : n 31 fVlb ro e :e o h i ■¡î i c ■. ;î.f i .1 o - DS1225AB M48Z08 DS1225AD M48Z18 bq4010Y M48Z58 bq4010/4823Y M48Z58Y bq4010Y bq4010

asm eagle

Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Contextual Info: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM: