LL4451 Equivalents and Alternates

LL4451 Functional Equivalents (5)

The Functional Equivalents tab will give you options that are likely to match the same function of LL4451, but it may not fit your design.

Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number	Manufacturer	Composite Price	Description
BAW25	Telefunken Microelectronics Gmbh	Check for Price	Rectifier Diode, 1 Phase, 1 Element, 0.15A, 40V V(RRM)
1N4152	Shanghai Lunsure Electronic Technology Co Ltd	Check for Price	Rectifier Diode, 1 Phase, 1 Element, 0.15A, 40V V(RRM)
1N4152#N/A	Central Semiconductor Corp	Check for Price	Rectifier Diode,
1N4152	Shenzhen Yixinsemi Electronics Co Ltd	Check for Price	Rectifier Diode, 1 Phase, 1 Element, 0.15A, 40V V(RRM), Silicon, DO-35
BAW25	Microsemi Corporation (now Microchip)	Check for Price	Rectifier Diode, 1 Phase, 1 Element, 0.15A, 40V V(RRM)

LL4451 Datasheets (5)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
LL4451	International Semiconductor	SWITCHING DIODE	Scan	PDF	124.71KB	1
LL4451	ITT Industries	150mA Iout, 40V Vrrm Fast Recovery Rectifier	Scan	PDF	61.37KB	1
LL4451	Micronas Semiconductor	150mA Iout, 40V Vrrm Fast Recovery Rectifier	Scan	PDF	27.4KB	1
LL4451	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	33.08KB	1
LL4451	SUNMATE electronic Co., LTD	Silicon epitaxial planar diode in SOD-80 package, featuring 75V peak reverse voltage, 150mA average rectified current, 400mW maximum power dissipation, and fast switching speed with max 50ns reverse recovery time.	Original	PDF

LL4451 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1N627 Abstract: la 4450 1N459a LL4148 LL4149 LL4150 LL4151 LL4152 LL4154 LL4446 Contextual Info: SW ITC H IN G DIO DES, SU RFA CE MOUNT, MELF PACKAGE Peak Power IS I P a rt Num ber LL4148 LL4149 LL415Q LL4151 LL4152 U 4153 LL4154 LL4446 LL4447 LL4448 L.L4449 L 1.4450 LL4451 LL4453 LL4454 Re er e D iss ip a tio n Voltage P„ I*» V,M VòltS) M a x im u m	OCR Scan	LL4148 LL4149 LL4150 LL4151 LL4152 U4153 LL4154 LL4446 LL4447 LL4448 1N627 la 4450 1N459a LL4152	PDF
Contextual Info: 4684955 a? I T T SEMICONDUCTORS 87D 02327 »e 1m^a^ss 0DDS3a? t J~ D r . o9 SILICON DIODES General Purpose and Switching Diodes in MiniMELF Package Type Peak Inv. Voltage PIV M ax. Aver. Rectified Current lo Pow er Junction Dissipation Tem peraat 25 °C ture T,	OCR Scan	LL4148 LL4149 LL4150 LL4151 LL4152 LL4153 LL4154 LL4446 LL4447 LL4448	PDF
LL914 Abstract: LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 Contextual Info: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. LL-34 Cathode band Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current	Original	LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 LL4453 LL914 LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454	PDF
LL4149 Abstract: LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914 Contextual Info: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV	Original	LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 max30 LL4453 LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914	PDF
LL4149 Abstract: LL4150 LL4152 LL4153 LL4447 LL4449 LL4450 LL4451 LL4453 LL4454 Contextual Info: ITT S E M I C O N D / INTERMETALL b lE » • 4bfl2711 0003172 2^3 m i S l Silicon Diodes Silicon Diodes for general purpose and switching Cathode Mark h - 3.5*01-» / - These diodes are identical electrically to the corresponding JEDEC 1N . . . types.	OCR Scan	4b62711 01--K LL4149 LL4150 LL4152 LL4153 LL4447 LL4449 LL4450 LL4451 LL4453 LL4454	PDF
LL4149 Abstract: LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914 Contextual Info: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV	Original	LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 LL4453 LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914	PDF
Contextual Info: SWITCHING DIODES, SURFACE MOUNT, MELF PACKAGE M a x im u m i i i i l i s P a rt N um ber P ow er D is s ip a tio n Pea* R e v e rs e V o lta g e M a x im u m A v e ra g e Fwct C u rre n t M a x im u m R e v e rs e V o lta g e D rop a t 1, M a x im u m R e v e rs e	OCR Scan	LL4148 LL4149 LL41S0 L14152 LL41S4 LL4447 LL4448 DO-35	PDF
TCA700Y equivalent Abstract: SAJ300R SAF1092 SAK215 n525 by133 tca700y itt zener diode zpd ITT INTERMETALL BC327-25 Contextual Info: Pages Contents 2 and 3 List of Types 4 to 7 DIGIT2000 Digital TV System 8 to 21 ICs for TV and Radio Receivers 22 ICs for Telephone Applications 23 ICs for Electronic Clocks 24 and 25 ICs for Automobile Applications 26 ICs for other Applications 27 Voltage Stabilizers	OCR Scan	DIGIT2000 237th YU-61000 TCA700Y equivalent SAJ300R SAF1092 SAK215 n525 by133 tca700y itt zener diode zpd ITT INTERMETALL BC327-25	PDF
diodes ir Abstract: LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914 Contextual Info: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV	Original	LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 max30 LL4453 diodes ir LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914	PDF
A2 diode Abstract: 1N414S Contextual Info: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - — - - - - : General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver. Power Junction Rectified Dissipation TemperaCurrent lo at 25 'G	OCR Scan	00Q13QÔ DO-35 1N914 1N414S 1N4149 1N4150 1N4151 1N4152 1N4153 1N4154 A2 diode	PDF
1n4148 ITT Abstract: 1N914 ITT 1N914/1N4148 1n4448 itt 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 Contextual Info: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - - - — - - : G en era l P u r p o s e a n d S w it c h in g D io d e s in D O -3 5 P a ck a ge Type Peak Inv. Voltage PIV Max. Aver. Rectified Current lo Power	OCR Scan	DO-35 1N914 lF-10mA RL-100Â 1N4148 1N4149 1N4150 1n4148 ITT 1N914 ITT 1N914/1N4148 1n4448 itt 1N4151 1N4152 1N4153	PDF
LL4149 Contextual Info: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV	Original	LL914. LL4454 LL-34 LL914 LL4149 LL4151 LL4152 LL4451 LL4453 LL4149	PDF

LL4451 Search Results

LL4451 Functional Equivalents (5)

LL4451 Datasheets (5)

LL4451 Datasheets Context Search

1N627

LL914

LL4149

LL4149

LL4149

TCA700Y equivalent

diodes ir

A2 diode

1n4148 ITT

LL4149