L3B7254 Search Results

Contextual Info: MOTOROLA SC XSTRS/R F bfiF D • L3b7254 □ lb3 M A X I M U M R ATINGS Sym bol V alu e U n it Colle ctor-E m itte r V oltage v CEO -1 2 Vdc C o llector-B ase V oltag e VCBO -1 2 V dc Em itter-Base V oltag e v EBO - 4 .5 V dc C o lle c to r Current — C o ntinu ou s

IC MC14011

Abstract: AD11465 MJE5420Z IC MC14011 application notes IC MC14011 motorola IC TTL 74LS00 mc14011 motorola 74LS00 specifications ic 7401 MJE5420
Contextual Info: MOTOROLA SC XSTRS/R F 12E D I L3b7254 0 Gf l5 b4 1 T'43-d5 fl | Order this data sheet by MJE5420Z/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5420Z Advance Information Z-Sw itch Bipolar Pow er Circuit N P N Self-Protected Silicon Pow er Darlington POW ER D A R LIN G T O N

2N6300

Contextual Info: M OT OR OL A SC X S TR S /R 1SE D I L3b7254 QQflMSTS 5 I F • 2N6053, 2N6054 2N6298, 2N6299 PNP 2N6055, 2N6056 2N6300, 2N6301 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ARLIN GTO N COM PLEM EN TARY SILICON POWER TRAN SISTO RS DARLINGTON 8 AM PERE . . . designed for general-purpose amplifier and low frequency switching

BC372

Abstract: bc373 BC373-25 BC373-16 to 92 case BC 372
Contextual Info: MOT ORO LA SC 12E D I t3b72SM QGÔSÔ53 1 | X S TR S/R F 7 BC372, -16, -25, -40 BC373, -16, -25 M A X IM U M RATINGS BC 373 U nit 100 80 Vdc 100 80 Vd c Sym bol BC 372 Collector-Emitter Voltage VC E O Collector-Base Voltage VCBO Em itter-Base Voltage R a tin g

transistor d 188

Abstract: BD188 bd186 BD186 motorola BD190 3299 transistor
Contextual Info: M O T O R O L A SC Î X S T R S / R F> 6367254 MOTOROLA Th SC DT|b3b7ES4 96D <X ST R S/R _.F J 80565 GOflOSbS 4 D MOTOROLA E l SEMICONDUCTOR TECHNICAL DATA PLASTIC M E D IU M POWER SILICO N PNP TRANSISTOR 4 AM PERE POWER TRANSISTOR . . . designed for use in 5 to 10 Watt audio amplifiers utilizing

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier . . . designed specifically for 450 MHz CATV applications. Features ion-im ­ planted arsenic emitter transistors with 7.0 GHz f j and an all gold metallization system. • Specified for 5 3 - and 60-Channel Performance

2N3467

Abstract: 2N3467 MOTOROLA
Contextual Info: 2N3467* 2N3468* M A XIM U M RATINGS Symbol 2N3467 2N3468 Unit Emitter-Collector Voltage VCEO -4 0 -5 0 Vdc Collector-Base Voltage VCBO -4 0 -5 0 Vdc Emitter-Base Voltage vebo -5 .0 Vdc Collector Current — Continuous ic -1 .0 Ade Total Device Dissipation @ Ta = 25°C

TMS 3727

Abstract: MRF9511ALT1 sot-23 marking 7z RF9511 Motorola 8039 TMS 3748 MARKING T21 SOT23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors . . . designed for use in high gain, low noise small-signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

MJD47

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD47* MJD50* High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.

2N5190 MOTOROLA

Abstract: N5191 2N5190 C 3311 transistor LT 7706 d 317 P 2n transistor Motorola transistors 2N5192
Contextual Info: MOTORCLA SC XSTRS/R F T'3Ò 12E D | b3L72SM Q0ÛMS30 5 I 2N5190 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N5192 SILICON NPN POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS SILICON NPN . . . for use in power amplifier and switching circuits, — excellent safe

mhw612

Abstract: xMDA MHW6122
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 5 5 0 M H z CATV A m p lifie r M H W 6122 . . . designed specifically for 55 0 M H z CA TV applications. Features ion-implanted arsenic emitter transistors with 7.0 GHz f j and an all gold metallization system.

MRF522

Abstract: MRF524 MRFC521 MRF5211 MRF5211L mrfc case 317-01 MRF521 motorola MRF microlab slug tuner SF
Contextual Info: 12E D I b3b755M G0Ö7732 M OTOROL A MO TO ROLA SC T | XSTRS/R F S E M IC O N D U C T O R TECHNICAL DATA MRF521 M RFC521 M RF522 M R F524 M R F52 11 ,L The RF Line P N P S ilic o n H ig h -F re q u e n cy T ra n s is to rs . designed primarily for use in the high-gain, low-noise sm all-signal amplifiers for

4229P-LOO-3C8

Contextual Info: MOT OR OL A SC 1EE D | b3fe,72S4 QOflSlGS b | XSTRS/R F MOTOROLA M J1 2 0 2 0 TECHNICAL DATA MJ12021 MJ12022 SEMICONDUCTOR De s i g n e r ’ s D a t a She et 5 .0 , 8 .0 and 1 5 A M P E R E NPN SILIC O N DEFLECTION POWER T R A N SISTO R S HIGH PERFORMANCE NPN

2n3634

Abstract: 2N3634 MOTOROLA
Contextual Info: 2N3634 M A X IM U M RATINGS thru Symbol 2N3634 2N3635 2N3636 2N3637 Unit C o lle c to r-E m itte r V olta g e v CEO -1 4 0 -1 7 5 Vdc C o lle c to r-B a se V o lta g e VCBO -1 4 0 -1 7 5 Vdc Rating E m itte r-B a se V o lta g e - 5 .0 vebo >c - 1 .0 Ade T o ta l D evice D issip a tio n

308B

Abstract: BC308 Motorola bc309 bc 307A bc307a BC309 Motorola bc307
Contextual Info: MOTOROLA SC XSTRS/R F 12E 0 I t3b7E5i 0043838 S | BC307, A, B, C thru M A X IM U M RATINGS Sym bol R a tin g B C B C BC 307 308 309 BC309, A, B, C U nit Collector-Emltter Voltage VCEO 45 25 25 Vdc Collector-Base Voltage VCBO 50 30 30 Vdc Em itter-Base Voltage

MTD4N20

Abstract: MTD4N20-1 369A-10 AN569 TMOS Power FET AN569 in Motorola Power Applications
Contextual Info: MO T O RO L A SC CXSTRS/R F bßF: D b3b7254 OGel f l 4 cH S7T MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancem ent-M ode Silicon G ate D PA K fo r S urface M o u n t or Insertion M o u n t