KMM366F88 Search Results

Contextual Info: KMM366F883AK KMM366F803AK DRAM1VI0DULE KMM366F883AK & KMM366F803AK EDO Mode without buffer 8Mx64 DRAM DIMM based on 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366FB8 0 3AK is a 8M bit x 64 Dynamic RAM high density memory module. The

KM48V8004AK

Contextual Info: KMM366F883AK KMM366F803AK DRAM1VI0DULE KMM366F883AK & KMM366F803AK EDO Mode without buffer 8Mx64 DRAM DIMM based on 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F88 0 3AK is a 8M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: DRAM MODULE KM M 3 6 6 F 8 0 8 4 B S1 Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1997 L££T R t»ü £S DRAM MODULE KM M 3 6 6 F 8 0 ( 8 ) 4 B S1 Re v is io n H is to ry Version 0.0 (Dec. 1997) • Removed two AC parameters t cacp (access time from CAS) and tAAP (access time from col. addr.) in AC C H A R A C T E R I S T I C S .

Contextual Info: DRAM MODULE KMM366F80 8 3BK2 KMM366F80(8)3BK2EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 3 6 6 F 8 0 (8 )3 B K 2 is a 8 M x6 4b its D ynam ic RAM high de n sity m em o ry m odule.

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

KMM366F213BK6

Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/BWGKMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7

1MX16

Abstract: KMM5324104BK KMM5321200B
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE DRAM Module Org. Part No. Feature 4 Byte Single In-Line Memory Module 5 V 1Mx32 1Mx36 2Mx32 4Mx36 8Mx32 8Mx36 1— -— — r ÍF P .S G , PPD 1Mx16, SOJ 60/70 750 1024/16 r ~ m o w KMM5321200BW/BWG

4CS1

Contextual Info: DRAM MODULE KMM366F80 8 4CS1 KMM366F80(8)4CS1 EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)4CS1 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)4CS1 consists of eight CMOS 4Mx16bits

dram module

Contextual Info: DRAM MODULE KMM 366F80 8 3BK3 8Mx64 Unbuffered DIMM (8Mx8 base) Revision 0.0 Nov. 1997 -1 - Rev. 0.0 ( Nov. 19 97) DRAM MODULE KMM 366F80(8)3BK3 Re v i s i o n H is to ry Ve rs i on 0 . 0 (N ov . 1 997 ) • Changed PCB for signal integrity. • Changed Module Part No. from KMM366F80(8)3BK to KMM366F80(8)3BK3 caused by PCB revision .

Contextual Info: DRAM MODULE KMM366F80 8 4BS1 KMM366F80(8)4BS1 EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)4BS1 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)4BS1 consists of eight CMOS 4Mx16bits

Contextual Info: DRAM MODULE KMM366F80 8 3CK2 KMM366F80(8)3CK2 EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)3CK2 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)3CK2 consists of eight CMOS 8Mx8bits

Contextual Info: DRAM MODULE KMM366F80 8 3BK2 KMM366F80(8)3BK2 EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)3BK2 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)3BK2 consists of eight CMOS 8Mx8bits