JB4142 Search Results

Contextual Info: S A MS UN G E L E C T R O N I C S INC 42E D E3 7=Jb4142 G O I U S M 5 SSMGK CMOS MASK ROM KM23C4100A 4M-Bit 512Kx8/256Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization Byte Mode: 524,288 x 8 W ord M ode: 26 2,14 4x16 • Fast access tim e : 120ns (m ax.)

P40Y

Abstract: KS57P3016 KS57C3016 4J, P113 5 PIN
Contextual Info: K S 5 7 P 3 0 16MTP ELECTRONICS Mi crocont roll er KS57P3016 MTP The KS57P3016 single-chip CMOS microcontroller is the MTP Multiple Times Programmable version of the KS57C3016 microcontroller. It has an on-chip E2PROM instead of masked ROM. The KS57P3016 is fully

KM44V4100BS

Abstract: Oi24 A10QZ
Contextual Info: KM44V4100BS CMOS DRAM ELECTR ONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

Contextual Info: SEMICONDUCTOR L T 104V 3-102 S pecifications April 1995, Rev. 1 CONTENTS PAGE Record of Revision 3 General Description 4 1. Absolute Maximum Rating 5 1-1 Environmental Absolute Ratings 1-2 Electrical Absolute Ratings 2. Optical Characteristics 6 3. Electrical Characteristics

samsung p28

Contextual Info: K S O l 19 Multimedia ELECTRONICS VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels

96-Seg

Contextual Info: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features

1dq10

Contextual Info: KM416C254B, KM416V254B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: -c u l l i l i» K S 57C 2504 4-Bit CMOS Microcontroller ELECTRONICS Data Sheet DESCRIPTION The KS57C2504 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With up to 320-dot LCD direct-drive capability, 8-bit timer/counter, serial I/O, and comparator, the KS57C2504 offers an

Contextual Info: KM44C1002C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random or sequential access of memory cells within the same row. Access time -5, -6, -7 or -8 and

Contextual Info: KM41C16002A/AI_/ALL/ASL CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16002A/AL/ALL/ASL is a high speed CMOS 16,777,216 bit x 1 Dynamic Random Access Memory. Its design is optim ized for high

IRFS530

Abstract: IRFS531
Contextual Info: N-CHANNEL POWER MOSFETS IRFS530/531 FEATURES • • • • • • • Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

samsung crt monitor circuit diagram

Abstract: A0484 samsung crt monitor vga circuit diagram 0Q-22
Contextual Info: KDA0484 85MHz Monolithic CMOS True-Color RAM DAC SEMICONDUCTOR Preliminary — March, 1994 FUNCTIONAL DESCRIPTION KDA0484 FEATURES • 8:1, 4:1, 2 :1 ,1 :1 MUX Pixel Ports • 85MHz, 75MHz Pixel Clock • Separate 8-bit VGA Port Microprocessor Interface The KDA0484 support a standard microprocessor bus

U321

Abstract: U320 DIODE s31a IRFR321 ui 321
Contextual Info: N-CHANNEL POWER MOSFETS IRFR320/321 IRFU320/321 FEATURES D-PAK • Low er R ds < on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRF9610

Abstract: IRF9611
Contextual Info: P-CHANNEL POWER MOSFETS IRF9610/9611 FEATURES • Lower R dsion • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

C254D

Abstract: cmos dram NCC KMQ
Contextual Info: KM416V254DJ ELECTRONICS CMOS D R A M 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: KM68BV4002 BiCMOS SRAM 512 K x 8 Bit High Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) The KM68BV4002 is a 4,194,304-bit high-speed Static

44C1000

Contextual Info: SAMSUNG ELECTRONICS INC 42E KM44C1000/L T> a 7^4142 001G2G4 - ^ 0 fflSflüK CMOS DRAM 1MX4 Bit CMOS Dynamic RAM with Fast Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1000/L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 dynamic Random Access Memory.

Contextual Info: KMM5364005BK/BKG KMM5364105BK/BKG DRAM MODULE KMM5364005BK/BKG & KMM5364105BK/BKG Fast Page with EDO Mode 4Mx36 DRAM SIMM, 4K & 2K Refresh, using 16M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M 53640 1 05BK is a 4M bit x 36 • Part Identification

Contextual Info: K S57C 0108 4-BIT CMOS Microcontroller ELECTRO N ICS Product Specification OVERVIEW The KS57C0108 single-chip CMOS microcontroller has been designed for high-performance using Samsung's newest 4-bit CPU core. With two 8-bit timer/counters, an 8-bit serial I/O interface, and eight n-channel open-drain

BTS630

Abstract: GDS5163 KSP8598 KSP8599
Contextual Info: KSP8598/8599 PNP EPITAXIAL SILICX N TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: VCeo = KSP8598: 60V KSP8599: 80V • C ollector Dissipation: P c max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage

T4 1060

Abstract: KS57C4004 sbr 1033 BSC23
Contextual Info: KS57C4004 4-BIT CMOS Microcontroller ELECTRONICS Ploduct specification OVERVIEW The KS57C4004 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit development approach, SAM4 Samsung Arrangeable Microcontrollers . With an A/D converter, LED

Contextual Info: Advance Information KM29V64001T/R FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase

Contextual Info: KM41V16000A/AL/ALL/ASL CMOSDRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tC A C tR C K M 41V 16000A /A L /A L L /A S L -6 60 ns 15 ns 110 ns K M 41V 16000A /A L /A L L /A S L -7 70 ns 20 ns 130 ns

Contextual Info: N-CHANNEL POWER MOSFETS IRFR224/U224 FEATURES D -P A K • Low er R d s <o n • Improved inductive ruggedness » Fast sw itching tim es 2 • Rugged polysilicon gate cell structure « • Low er input cap acitance * •Extended sa fe operating area • Improved high tem perature reliability