SSS60N
Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
Contextual Info: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00
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o-220irfsz20sss15n05irfsz30+15irfsz40sss50n05sss60n05irfsz24sss15n06irfsz34sss60nsss6n60sss50n061rfs644irfs540irfs541sss7n60irfs630rfs830
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std2n52
Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232
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2sk11192sk11202sk11512sk1152+162sk11532sk11542sk11552sk11562sk11572sk1158std2n52stp2na60buz102 equivalentssh6n80rfp60n06replacement for irl2203nbuz91 equivalentrfp60n06leirfp460 cross referencebuz91a equivalent
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IRFS530
Abstract: IRFS531
Contextual Info: N-CHANNEL POWER MOSFETS IRFS530/531 FEATURES • • • • • • • Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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irfs530/531irfs530irfs531o-220f+17tb4142
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IRFS540
Abstract: IRFS541 irfsz22 IRFS634 irfs630 IRFS522
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL BVdss V Part Number ID(onXA) RDS(onXß) 14.00 15.00 25.00 30.00 35.00 35.00 0.120 0.100 0.070 0.050 0.035 0.028 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 60.00 14.00 15.00 25.00 30.00 35.00
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o-220irfsz22irfsz20irfsz32+11irfsz30irfsz42irfsz40irfsz25irfsz24irfsz35irfs540irfs541irfs634irfs630irfs522
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1RFS530
Abstract: Samsung s3 IRFS250 IRFS251 IRFS252 IRFS332 IRFS333 IRFS340 IRFS341 IRFS342
Contextual Info: - 304 - f m % X H Vd s tí: £ Vg s m fô Ta= 2 5 ' 0 !d Pd Ig s s V g s th Id s s or € * V dg l (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) m 1d (mA) tt a*i Ds(or.) Vd s = Vg s (13= 2 5 * 0 Id (on) Ciss g fs Coss Crss V g s -0
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irfs250t0-247irfs251irfs252+10o-2471rfs330irfs33i1rfs530samsung s3irfs332irfs333irfs340irfs341irfs342
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SSH6N80
Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205
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2sk11192sk11202sk11512sk1152+162sk11532sk11542sk11552sk11562sk11572sk1158ssh6n80irf640 equivalentbuz100 equivalentste38na50irf540 equivalentstp2na60buz10 equivalentbuk444 equivalent2sk2700 equivalentbuz71 equivalent
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