IXTP2N100 Search Results

IXTP2N100 Functional Equivalents (2)

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Part Number	Manufacturer	Composite Price	Description
IXTP2N100	Littelfuse Inc	$4.2428	Power Field-Effect Transistor, 2A I(D), 1000V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IXTP2N100	IXYS Corporation	Check for Price	Power Field-Effect Transistor, 2A I(D), 1000V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IXTP2N100 Datasheets (7)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTP2N100	IXYS	1000V high voltage MOSFET	Original	PDF	76.62KB	4
IXTP2N100	IXYS	High Voltage Power MOSFETs	Scan	PDF	1.11MB	12
IXTP2N100	IXYS	High Voltage Power MOSFETs	Scan	PDF	1.11MB	12
IXTP2N100	Sharp	1000 V, 2 A, sourse-drain diode	Scan	PDF	66.79KB	1
IXTP2N100A	IXYS	High Voltage Power MOSFETs	Scan	PDF	1.11MB	12
IXTP2N100A	IXYS	High Voltage Power MOSFETs	Scan	PDF	1.11MB	12
IXTP2N100P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 2A TO-220	Original	PDF		4

IXTP2N100 Price and Stock

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IXYS Corporation IXTP2N100P MOSFET N-CH 1000V 2A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP2N100P	Tube	275		1	1 $5.33 10 $3.53 100 $2.52 1000 $2.08 10000 $2.08	Buy Now
Mouser Electronics	IXTP2N100P		432			1 $5.33 10 $2.77 100 $2.51 1000 $2.11 10000 $2.11	Buy Now
TTI	IXTP2N100P	Tube			300	1 - 10 - 100 - 1000 $2.48 10000 $2.48	Buy Now
TME	IXTP2N100P				1	1 $3.47 10 $3.05 100 $2.21 1000 $1.89 10000 $1.89	Get Quote
Chip 1 Exchange	IXTP2N100P		2,555			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Vyrian	IXTP2N100P		710			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXTP2N100 MOSFET N-CH 1000V 2A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP2N100	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXTP2N100P MOSFET, N-CH, 1KV, 2A, TO-220-3;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTP2N100P	Bulk			1	1 $3.79 10 $3.79 100 $3.79 1000 $3.79 10000 $3.79	Buy Now
RS	IXTP2N100P	Bulk		8 Weeks	50	1 - 10 - 100 $3.02 1000 $3.02 10000 $3.02	Get Quote
Onlinecomponents.com	IXTP2N100P					1 - 10 - 100 $2.04 1000 $1.73 10000 $1.62	Buy Now
IXYS Corporation IXTP2N100A POWER FIELD-EFFECT TRANSISTOR, 2A I(D), 1000V, 6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IXTP2N100A		29			1 $3.15 10 $2.10 100 $1.57 1000 $1.57 10000 $1.57	Buy Now

IXTP2N100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTP4N50A Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100 Contextual Info: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T \|~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80	OCR Scan	IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP4N50A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460	PDF
IXTP2N100 Abstract: 2N100 IXTA2N100 Contextual Info: IXTA2N100 IXTP2N100 High Voltage MOSFET VDSS ID25 RDS on = 1000V = 2A ≤ 7Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	IXTA2N100 IXTP2N100 O-263 2N100 3X-G68 IXTP2N100 IXTA2N100	PDF
2N95A Abstract: 2N95 2N100 IXTM2N100 IXTM2N95 IXTP2N100 IXTP2N95 Contextual Info: 1ÖE D I X Y S CORP • 4böb22b QOOGLOS T ■ IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 □ IX Y S 2 A M PS, 950-1000 V, 6.0Q/7.0Q T V £ °l-ll MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous	OCR Scan	IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 IXTP2N95 IXTM2N95 IXTP2N100 1XTM2N100 O-220 300/js, 2N95A 2N95 2N100 IXTM2N95	PDF
Contextual Info: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25	OCR Scan	IXTA2N100 IXTP2N100 Cto150 O-263 O-22QAB 1999IXYS C2-76 C2-77	PDF
Contextual Info: Polar VHVTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ Ω 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P	PDF
IXTP2N100P Abstract: 2N100P IXTA2N100P IXTP2N100 Contextual Info: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ 7.5Ω Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P 4-03-08-A IXTP2N100P 2N100P IXTA2N100P IXTP2N100	PDF
Contextual Info: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A Ω ≤ 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P 4-03-08-A	PDF
Contextual Info: High Voltage MOSFET VDSS ID25 IXTA2N100 IXTP2N100 RDS on = 1000V = 2A Ω ≤ 7Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	IXTA2N100 IXTP2N100 O-263 2N100 3X-G68	PDF
ZO 109 wa Abstract: ixtm2N100 PN channel MOSFET 10A ixtm2N95 Contextual Info: 1ÖE I X Y S CORP D • 4böb22b QOOGLOS T ■ IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 □ IX Y S 2 AM PS, 950-1000 V, 6.0Q/7.0Q T V £ °l-ll MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous	OCR Scan	IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 IXTP2N95 IXTM2N95 IXTP2N100 CHA420 O-204 ZO 109 wa PN channel MOSFET 10A ixtm2N95	PDF
IXTH40N25 Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent Contextual Info: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V BSS m ax. e m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025	OCR Scan	IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IXTD40N25-6X IXTD40N30-7X IRFC450-5X IRFC460-6X IXTD21N50-7X IXTD24N50-7X IXTH40N25 irfp450 equivalent IXTH7P50 IXTH12N90 IXTD11N80 IRFP460 equivalent	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
Irfp250 irfp460 Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 Contextual Info: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)	OCR Scan	O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20	PDF
IXFd50n20 Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type	Original		PDF
MJ1005 Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007 Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:	Original	IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007	PDF

MOSFET 11N80 Data sheet Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640 Contextual Info: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250	Original	O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640	PDF
2N100 Abstract: FIGURE10 125OC IXTA2N100 IXTP2N100 Contextual Info: High Voltage MOSFET IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS on = 7 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	2N100 O-220AB O-263 125OC Figure10. 2N100 FIGURE10 125OC IXTA2N100 IXTP2N100	PDF
IXTH13P20 Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460 Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan		PDF
IRFP260 equivalent Abstract: IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD50N20-7X IXTD05N100-1T IXTD67N10-7X x315 IRFP254 equivalent Contextual Info: Standard Power MOSFET and MegaMOSTMFET Chips N-Channel Enhancement-Mode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss typ. trr typ. V Ω IXTD67N10-7X IXTD75N10-7X 100 0.025 0.02 5 5 3700 3700 300 300 IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X 200	Original	IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X IFRC254-5X IFRC264-6X IXTD40N30-7X IRFC450-5X IRFP260 equivalent IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD05N100-1T x315 IRFP254 equivalent	PDF

IXTP2N100 Search Results

IXTP2N100 Functional Equivalents (2)

IXTP2N100 Datasheets (7)

IXTP2N100 Price and Stock

IXYS Corporation IXTP2N100P

IXYS Corporation IXTP2N100

Littelfuse Inc IXTP2N100P

IXYS Corporation IXTP2N100A

IXTP2N100 Datasheets Context Search

IXTP4N50A

IXTP2N100

2N95A

IXTP2N100P

ZO 109 wa

IXTH40N25

IXTD08N100P-1A

Irfp250 irfp460

IXFd50n20

MJ1005

MOSFET 11N80 Data sheet

2N100

IXTH13P20

IRFP260 equivalent