IXFB44N100P Search Results

IXFB44N100P Datasheets (1)

Filter by Manufacturer

IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFB44N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 44A PLUS264	Original	PDF		4

IXFB44N100P Price and Stock

Filter by Manufacturer

Select Manufacturer


IXYS Corporation IXFB44N100P Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFB44N100P				1	1 $33.59 10 $26.42 100 $23.55 1000 $23.55 10000 $23.55	Get Quote
Newark	IXFB44N100P	Bulk	104		1	1 $36.88 10 $28.22 100 $26.74 1000 $25.67 10000 $24.60	Buy Now
TTI	IXFB44N100P	Tube			300	1 - 10 - 100 - 1000 $26.14 10000 $26.14	Buy Now
Future Electronics	IXFB44N100P	Tube		26 Weeks	300	1 - 10 - 100 $31.61 1000 $31.20 10000 $31.20	Buy Now
Littelfuse Inc IXFB44N100P DiscMosfetN-CH HiPerFET-Polar TO-264(3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXFB44N100P	Bulk		8 Weeks	25	1 - 10 - 100 $38.83 1000 $35.72 10000 $35.72	Get Quote
Onlinecomponents.com	IXFB44N100P					1 $28.06 10 $25.04 100 $22.29 1000 $21.70 10000 $21.70	Buy Now
IXYS Integrated Circuits Division IXFB44N100P MOSFET N-CH 1000V 44A PLUS264 / Trans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	IXFB44N100P		2,862			1 $53.22 10 $35.48 100 $35.48 1000 $35.48 10000 $35.48	Buy Now

IXFB44N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFB44N100P Abstract: IXFB44N100 44n10 44n100p DS99867A Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous	Original	ixfb44n100p 300ns plus264tm 44n100p +44-01-08-d ixfb44n100 44n10 ds99867a	PDF
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	ixfb44n100p 300ns plus264tm 44n100p +18-27-07-b	PDF
Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 44A Ω 220mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfb44n100p 300ns plus264tm 44n100p +14-01-08-d	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200v ixfb30n120p ixfl30n120p ixfn30n120p +14ixfl32n120p ixfn32n120p plus220 ixfv110n10ps 1200 volt mosfet 1000 volt mosfet mosfet 300 volt hiperfet ixfn38n100 sot 227b diode fast transistor polar 2r4n120p ixfn44n100p ixfb44n100p	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	d-68623 ixbod1-08 ixbod1-09 ixbod1-10 +12dsep30-06br dsep30-12cr ixgp70n33 ixgq90n33 sk0604 ixtp76n075 ixer35n120d1 ixgp70n33tbm-a dh60-18a vbo19 sk0712 ixth1n250	PDF