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IXFB44N100P Abstract: IXFB44N100 44n10 44n100p DS99867A Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous	Original	IXFB44N100P 300ns PLUS264TM 44N100P 4-01-08-D IXFB44N100P IXFB44N100 44n10 DS99867A	PDF
Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 44A Ω 220mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFB44N100P 300ns PLUS264TM 44N100P 4-01-08-D	PDF

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IXFB44N100P

Abstract: IXFB44N100 44n10 44n100p DS99867A
Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFB44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous

Original

IXFB44N100P 300ns PLUS264TM 44N100P 4-01-08-D IXFB44N100P IXFB44N100 44n10 DS99867A

PDF

Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB44N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 44A Ω 220mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Original

IXFB44N100P 300ns PLUS264TM 44N100P 4-01-08-D

PDF