IRGPC40K Search Results

600V 25A Ultrafast Diode

Abstract: Diode 188 IRGPC40KD2
Contextual Info: PD - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes

transistor C946

Abstract: C948 c948 transistor C946 C947 c 948 BR c945 transistor diode c946 transistor c951 c947 transistor
Contextual Info: International tor]Rectifier P D - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • Ie Short circuit rated -1 Ops @ 125°C, V q E = 15V Switching-loss rating includes all "tail" losses

IRGPC40

Abstract: IRGPC40K
Contextual Info: PD - 9.1077 IRGPC40K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

transistor C946

Contextual Info: PD - 9.1114 International [^Rectifier IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V ces = 600V Short circuit rated -10ns @125°C, VGE= 15V Switching-loss rating includes all "tail" losses

500V N-Channel IGBT TO-3P

Abstract: IRGPC40K IC25C
Contextual Info: PD - 9.1077 IRGPC40K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

IRGPC40KD2

Contextual Info: PD - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes

C886

Abstract: transistor C886 S10008
Contextual Info: bitemational S Rectifier P D -9.1077 IRGPC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ms @ 125°C, VGe = 15V • Switching-ioss rating includes all “tail" losses • Optimized for high operating frequency ewer 5kHz

Contextual Info: PD- 9.1077 International iör Rectifier IRGPC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V q e = 1 5 V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

IRGKI200F06

Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U

Contextual Info: Data Sheet No. PD60019J International 1QR Rectifier_ IR 2 1 3 0 /IR 2 1 3 2 PHASE BRIDGE DRIVER 3 Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

Contextual Info: Preliminary Data Sheet No. PD60107J International IQ R Rectifier IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features Product Summary • F loa ting ch a n n e l d e sig n e d for b o o tstra p op era tion F ully o p e ra tio n a l to + 6 0 0 V o r+ 1 2 0 0 V

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

IRGCC40KE

Abstract: IRGPC40K
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

TRANSISTOR 9642

Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

IRGCC40KE

Abstract: IRGPC40K
Contextual Info: PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

application note ir2233j

Abstract: IR2133J IR2235 ir2233j application IR2133 IR2133 application note
Contextual Info: Data Sheet No. PD60107-Q IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune

IRGKI200F06

Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Contextual Info: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications

IR2133 application note

Abstract: IR2133 application notes
Contextual Info: Data Sheet No. PD60107 revX IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) & (PbF) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and

9544 transistor

Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

IR2133 application note

Contextual Info: Data Sheet No. PD60107-R IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune

IR2133 application note

Abstract: mosfet 1200V 40A ax1500 IGBT mod igbt 500V 22A AX-7506-00 SCOP 200-002
Contextual Info: Data Sheet No. PD60107 rev.V IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and

IRGPH40KD2

Abstract: IRGPH20K irgph30k
Contextual Info: HIRectifier IGBTs International UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency— Optim ized for Pow er Conversion Part Number V CES Collector to Emitter Voltage M a x V CE(on) Collector to Emitter Saturation Voltage

IR2132 APPLICATION NOTE

Abstract: IR2130 APPLICATION NOTE ir2130 Mosfet driver IR2130 ir2130 application IR2130 3 phase irf840 power supply application IR2130 Drive circuit for IGBT using IR2130 IR2130S
Contextual Info: Data Sheet No. PD60019J IR2130/IR2132 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune · Gate drive supply range from 10 to 20V

IR2133J

Abstract: irg4p*50kd IR2133 IR2135 IR2233 IR2235
Contextual Info: Back Preliminary Data Sheet No. PD60107J IR2133 / IR2135 IR2233 / IR2235 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage