IRFY9130 Search Results

IRFY9130

Abstract: IRFY9130C IRFY9130CM IRFY9130M
Contextual Info: PD - 94195 POWER MOSFET THRU-HOLE TO-257AA IRFY9130,IRFY9130M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130 0.3 Ω -11.2A Glass IRFY9130M 0.3 Ω -11.2A Glass HEXFET® MOSFET technology is the key to International

SHDC226309

Contextual Info: SENSITRON SEMICONDUCTOR SHD226309 TECHNICAL DATA DATA SHEET 619, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: • 100 Volt, 0.31 Ohm, -9.3 A MOSFET • • • • Fast Switching Low RDS on Equivalent to IRFY9130 Series Add a “C” to the part number for ceramic seals, SHDC226309

IRFY9130M

Contextual Info: IRFY9130M Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 11.2A RDS(ON) = 0.3Ω Ω 1.0 (0.039)

Contextual Info: Provisional Data Sheet No. PD 9.1293A International IGR Rectifier IRFY9130CM HEXFET9 POWER MOSFET P-CHANNEL -100 Volt, 0.3Q HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The effi­

Contextual Info: PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET THRU-HOLE TO-257AA 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International

IRFY9130C

Contextual Info: IRFY9130C Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 11.2A RDS(ON) = 0.3Ω Ω 1.0 (0.039)

Contextual Info: IRFY9130 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)9.3 I(DM) Max. (A) Pulsed I(D)5.8 @Temp (øC)100# IDM Max (@25øC Amb)37 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45# Minimum Operating Temp (øC)-55

SHDC226309

Abstract: IRFY9130 SHD226309
Contextual Info: SENSITRON SEMICONDUCTOR SHD226309 TECHNICAL DATA DATA SHEET 619, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: • 100 Volt, 0.31 Ohm, -9.3 A MOSFET • • • • Fast Switching Low RDS on Equivalent to IRFY9130 Series Add a “C” to the part number for ceramic seals, SHDC226309

HEXFET Power MOSFET P-Channel

Abstract: IRFY9130C IRFY9130CM
Contextual Info: Provisional Data Sheet No. PD 9.1293A IRFY9130CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.3Ω HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.

Contextual Info: IRFY9130M Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)9.3 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)37.2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45 Minimum Operating Temp (øC)

Contextual Info: IRFY9130C Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11.2 I(DM) Max. (A) Pulsed I(D)7.1 @Temp (øC)100# IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75# Minimum Operating Temp (øC)-55

q 1363

Contextual Info: PD-91293C IRFY9130C, IRFY9130CM POWER MOSFET THRU-HOLE TO-257AA 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic HEXFET® MOSFET technology is the key to International

TRANSISTOR 112a

Abstract: IRFY9130C IRFY9130CM
Contextual Info: PD - 91293B POWER MOSFET THRU-HOLE TO-257AA IRFY9130C,IRFY9130CM 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY9130C 0.3 Ω -11.2A Ceramic IRFY9130CM 0.3 Ω -11.2A Ceramic HEXFET® MOSFET technology is the key to International

IRFY9130

Contextual Info: IRFY9130 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 -100V -9.3A Ω 0.31Ω FEATURES

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

Contextual Info: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

IRHNA57064SCS

Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Contextual Info: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5

JANTX2N7334

Abstract: irfy430
Contextual Info: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for