IRFD214 Search Results

IRFD214

Abstract: n mosfet low vgs
Contextual Info: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT

Contextual Info: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT

Contextual Info: IRFD214_RC, SiHFD214_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRFD120

Contextual Info: PD- 95931 IRFD214PbF • Lead-Free Document Number: 91130 10/29/04 www.vishay.com 1 IRFD214PbF Document Number: 91130 www.vishay.com 2 IRFD214PbF Document Number: 91130 www.vishay.com 3 IRFD214PbF Document Number: 91130 www.vishay.com 4 IRFD214PbF Document Number: 91130

7105

Abstract: IRFD120 marking tac
Contextual Info: PD- 95931 IRFD214PbF • Lead-Free www.irf.com 1 10/29/04 IRFD214PbF 2 www.irf.com IRFD214PbF www.irf.com 3 IRFD214PbF 4 www.irf.com IRFD214PbF www.irf.com 5 IRFD214PbF 6 www.irf.com IRFD214PbF www.irf.com 7 IRFD214PbF Hexdip Package Outline Dimensions are shown in millimeters inches

Contextual Info: PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 2.0Ω ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer

IRFD214

Abstract: SiHFD214
Contextual Info: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT

SiHFD214

Contextual Info: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT

SiHFD214

Contextual Info: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT

IRFD214

Contextual Info: PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 2.0Ω ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer

IRFD214

Contextual Info: Previous Datasheet Index Next Data Sheet PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 2.0Ω

IRFD214

Contextual Info: PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 2.0Ω ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: International ¡^Rectifier_ HEXFET Power MOSFET P D -9.1271 IRFD214 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V d ss = 2 5 0 V ^ D S o n = 2 . 0 ß

Contextual Info: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT

Contextual Info: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT

SiHFD214

Contextual Info: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

IRF3205 equivalent

Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
Contextual Info: 4.1.1 HIGH TEMPERATURE REVERSE BIAS HTRB HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction Temperature: Tj = +150°C or 175°C, as indicated Applied Bias: Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test

irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

irf 425

Abstract: ICL8038CCPD HSMS-2820-BLK icl8038ccjd IRF 315 HSDL-1001-001 hsmp-3890 ICL232CPE HSMP 2820 ICM7211AMIPL
Contextual Info: Semiconductor Directory Page 1.34 1.58 1.54 0.87 2.09 IRF INT IRF IRF IRF 815 824 815 Ñ 816 IRF9410 IRF9510 IRF9510S IRF9520 IRF9520 IRF9520N IRF9530 1.28 0.80 1.47 0.74 0.62 1.04 1.23 IRF IRF IRF IRF INT IRF INT 816 815 816 815 Ñ 814 824 Ñ 824 Ñ 816 815

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

fu110

Contextual Info: I n t e r n a t i o n a l R e c t if ie r HEXFET Power MOSFETS V B%SS Draln-to-Source BreakdownVoltage (Volt. Part Number RDSfon) On-State Resistance (Ohms) iQContinuous Drain Current 100* C 25* C (Amps) (Amps) RthJC Max Thermal Resistance row) PdOTo 2S“C