IRF2807L Search Results

60V Single N-Channel HEXFET Power MOSFET in a HEX

Abstract: AN-994 IRF2807L irf2807s
Contextual Info: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ

AN-994

Abstract: IRF2807L IRF2807S
Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

Contextual Info: International IG R Rectifier pd-ms« IR F 2 8 0 7 S /L preliminary HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

43a 504

Abstract: marking code 43a AN-994 IRF2807L
Contextual Info: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ

Contextual Info: IRF2807S IRF2807L Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l TO-262 IRF2807L D2Pak IRF2807S l Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve

Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

mosfet k 61 y1

Abstract: IRF2807 AN-994 IRF2807L IRF2807S
Contextual Info: PD - 91518A IRF2807S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF2807S Low-profile through-hole (IRF2807L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS(on) = 0.013Ω G ID = 82A†

Contextual Info: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ

marking 43a

Abstract: AN-994 IRF2807L IRF2807S
Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

SD 1029 MOSFET

Abstract: diode LT 42
Contextual Info: PD -9.1518 International IÖR Rectifier IRF2807S/L PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

43a 504 pcb mounted

Abstract: 43a 504 m 60 n 03 g10 AN-994
Contextual Info: IRF2807S/IRF2807L Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance

irf510 switch

Abstract: IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215
Contextual Info: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

IRF1010E

Abstract: irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606
Contextual Info: HEXFET Power MOSFETs www.irf.com ID ID V BR DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (Ω ) (°C/W)