GP30B Search Results

RGP15J

Abstract: RGP10K GP30A GP30B GP30D GP30G GP30J GP30K GP30M RGP10A
Contextual Info: GLASS PASSIVATED PLASTIC RECTIFIERS REDRESSEURS EN VERRE PASSIVE BOITIER PLASTIQUE GLASPASSIVIERTE GLEICHRICHTER IN PLASTIKGEHÂUSE G L A S S P A S S IV A T E D J U N C T IO N Toper = — 6 5 ° I 1 7 5 °C Type Types Typen GP30A GP30B GP30D GP30G GP30J GP30K

Contextual Info: GP30A, GP30B, GP30D, GP30G, GP30J, GP30K, GP30M www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier condition structure for high reliability • Cavity-free glass-passivated junction

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

GP30A

Abstract: GP30B GP30D GP30M JESD22-B102D J-STD-002B GP30K
Contextual Info: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifiers Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 125 A IR 5.0 µA VF 1.2 V, 1.1 V Tj max. 175 °C d* e t n Pate DO-201AD * Glass-plastic encapsulation

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

gp30jhe3

Contextual Info: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifiers FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 µA

Contextual Info: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier condition structure for high reliability • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 A • Low forward voltage drop

Contextual Info: MCC TM Micro Commercial Components Features • • • • GP30A THRU GP30M
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 3.0 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts High temperature metallurgically bonded construction

D0-201AD

Abstract: GP30A GP30B GP30D GP30G GP30J GP30K GP30M
Contextual Info: 3.0 Amp MEGARECTIFIERS GP30A . . . 30M Series Data Sheet Mechanical Dimensions Description JEDEC D0-201AD .285 .375 .190 .210 1.00 Min. .050 typ. Features n HIGH TEMPERATURE METALLURGICALLY BONDED CONSTRUCTION n 3.0 AMP OPERATION @ TA = 55°C, WITH NO THERMAL RUNAWAY

1N4004 GS1G

Abstract: S8B100
Contextual Info: MCC STANDARD RECOVERY RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE: -55°C TO 150°C Average Forward Maximum Working Forward Peak Current @ HalfReverse Current Peak Surge Current Wave @ VRWM Reverse @ 8.3mS MCC Resistive Load Voltage Superimposed @ 25°C TL*

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

transformer TR-1700

Abstract: TR-1795 tr-180b TM-11A Trigger Module
Contextual Info: Ceramic-Metal Triggered Spark Gaps Key Features • Fast switching operation • High voltage holdoff • Ceramic-metal construction • No warm up period • High current capability • Long life Applications • Flashlamps • Electronically pumped gas lasers

Contextual Info: GP30A thru GP30M Glass Passivated Junction Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 3.0 Amperes Features ‹ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ‹ High temperature metallurgically bonded construction

Contextual Info: GP30A thru GP30M Vishay Semiconductors Patented* formerly General Semiconductor Glass Passivated Junction Plastic Rectifiers Reverse Voltage 50 to 1000V Forward Current 3.0A Features DO-201AD • Plastic package has Underwriters Laboratories Flammability Classification 94V-0

gp30j

Abstract: GENERAL SEMICONDUCTOR gp30k GP30M
Contextual Info: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifiers Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 125 A IR 5.0 µA VF 1.2 V, 1.1 V Tj max. 175 °C d* e t n Pate DO-201AD * Glass-plastic encapsulation

DO-204AC

Abstract: gf1m DO-214BA DO204AC DO204AL GI816 DO-204AL RG02-20E RG02 RGP02 VR800
Contextual Info: SUPERECTIFIERS 0.25 TO 3.0 AMPERES 50 VOLTS TO 4000 VOLTS INTRODUCTION TO SUPERECTIFIER General Semiconductor Superectifier is exactly that, a super rectifier. There is nothing else in the world like it. This is the most cost effective and highly reliable device on the market which is the result of a combination of patented technologies.

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

ru 94v-01

Abstract: P15J BY126 BY127 1n5624g BY227
Contextual Info: :n l 07 iwstr/ power D ElI 30^0137 000233’=] 0 G P 1 5 S E R IE S „ T - 0 / -/S - ^ M IN IA TU R E G L A S S P A S S IV A T Ë D J U N C T IO N P L A S T IC R E C T I F IE R VOLTAGE RANGE 50 to 1000 Volts C U R R EN T 1.5 Amperes FEA TU R ES DO-15 • High temperature metallurgically bonded— no