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GP30J
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FCI
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3.0 Amp Megarectifiers |
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PDF
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173.29KB |
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GP30J
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General Semiconductor
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GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER |
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PDF
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61.99KB |
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GP30J
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Micro Commercial Components
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3.0 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts |
Original |
PDF
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79.3KB |
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GP30J
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Taiwan Semiconductor
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3.0 A Glass Passivated Junction Plastic Rectifier |
Original |
PDF
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54.33KB |
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GP30J
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Zowie Technology
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SINTERED GLASS PASSIVATED JUNCTION RECTIFIER |
Original |
PDF
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57.93KB |
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GP30J
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General Instrument
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Short Form Data 1976 |
Short Form |
PDF
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66.11KB |
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GP30J
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General Instrument
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600 V, 3 A, glass passivated silicon junction plastic rectifier |
Scan |
PDF
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97.47KB |
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GP30J
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Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
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112.65KB |
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GP30J
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Unknown
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Cross Reference Datasheet |
Scan |
PDF
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36.51KB |
1 |
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GP30J
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Unknown
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Shortform Data and Cross References (Misc Datasheets) |
Short Form |
PDF
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30.58KB |
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GP30J-E3/54
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Vishay Semiconductors
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 600V 3A DO201AD |
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PDF
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4 |
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GP30J-E3/73
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Vishay Semiconductors
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 600V 3A DO201AD |
Original |
PDF
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4 |
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GP30JHE3/54
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Vishay Semiconductors
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 600V 3A DO201AD |
Original |
PDF
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4 |
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GP30JHE3/73
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Vishay Semiconductors
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURP 600V 3A DO201AD |
Original |
PDF
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4 |
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GP30J
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SUNMATE electronic Co., LTD
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3.0A axial leaded silicon rectifier diode in DO-201AD package, with 50 to 1000V repetitive reverse voltage range, low forward voltage drop, high surge current capability, and operating junction temperature from -65 to +125°C.Axial leaded silicon rectifier diode GP30A with 3.0A average rectified current, 50-1000V DC blocking voltage, low forward voltage drop, high surge current capability, and operating junction temperature from -65 to +125°C.3.0A average rectified output current, 50 to 1000V DC blocking voltage, -65 to +125°C operating temperature range, axial leaded silicon rectifier diode in DO-201AD package with high surge current capability and low forward voltage drop. |
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RGP30J
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SUNMATE electronic Co., LTD
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Fast recovery rectifier diodes in DO-201AD package with 3.0 A average forward current, 200 A surge current, 50 to 1000 V peak reverse voltage, and reverse recovery time of 150 to 500 ns. |
Original |
PDF
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EGP30J
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SUNMATE electronic Co., LTD
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Glass passivated fast rectifier diode in DO-201AD package, 3.0 A average rectified current, 50 to 1000 V reverse voltage range, 1.0 to 1.7 V forward voltage at 3.0 A, 50 to 75 ns reverse recovery time, suitable for high surge current applications. |
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GP30J
