FSS23 Search Results

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3
Contextual Info: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1
Contextual Info: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Formerly available as type TA17698. • 7A, 250V, rDS ON = 0.460Ω Description • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event

1E14

Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3
Contextual Info: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
Contextual Info: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1E14

Abstract: 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3
Contextual Info: FSS23A0D, FSS23A0R Data Sheet 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS234R4 JANSR2N7401
Contextual Info: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss
Contextual Info: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440

FSS232

Abstract: S232
Contextual Info: Ordering number:ENN6359 N-Channel Silicon MOSFET FSS232 Load Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS232] 5 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain

FSS238

Abstract: S238 PG2520
Contextual Info: Ordering number:ENN6401 N-Channel Silicon MOSFET FSS238 Load Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS238] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source 2 : Source 3 : Source 4 : Gate

schottky diode 100A

Abstract: DO214 rectifier 50a Schottky Diode 50V 3A 50a rectifier circuit 50A schottky rectifier DO214-AB transistor 100a Schottky rectifier 3A 60v diode DO214
Contextual Info: QUICK GUIDE Schottky Rectifier SCHOTTKY RECTIFIERS (SURFACE MOUNTED DEVICES) IF IFSM 20V 30V 40V 50V 60V FSS1 1A 40A FSS12 FSS13 FSS14 FSS15* FSS16* 0.50V 0.75V* DO214-AC FSS2 2A 50A FSS22 FSS23 FSS24 FSS25* FSS26* 0.50V 0.70V* DO214-AA FSS3 3A 100A FSS32

r4373

Contextual Info: JANSR2N7400 33 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 200V, rDS 0N = 0.4400 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

S234

Contextual Info: FSS234 N- Channel MOS Silicon FET DC-DC Converter Use TENTATIVE Features and Applications • Very Low ON-state resistance. • 4V drive. • High Speed Switching. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS

fss230

Abstract: S230D
Contextual Info: 33 FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rDS ON = 0.440C1 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

1E14

Abstract: 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSS23A0D, FSS23A0R Data Sheet 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: FSS230D, FSS230R S em iconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rQs^oN = 0.440£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSS23A4D, FSS23A4R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

FSS232

Abstract: S232
Contextual Info: Ordering number : ENN6359 SANYO Semiconductors DATA SHEET FSS232 N-Channel Silicon MOSFET Load Switching Applications Features • Low ON resistance. · 4V drive. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage

Contextual Info: FSS230D, FSS230R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features • 8A, 200V, Package = 0.440Q TO-257AA • Total Dose - Meets Pre-Rad Specifications to 100K RAD Si • Single Event - Safe Operating Area Curve for Single Event Effects

1E14

Abstract: 2E12 FSS234R4 JANSR2N7401 relay 12v 300 ohm
Contextual Info: JANSR2N7401 August 1998 Formerly FSS234R4 File Number 4571 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: JANSR2N7401 January 2002 Formerly FSS234R4 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

FSS234

Abstract: 1E14 2E12 FSS234R4 JANSR2N7401 T0-257AA VGS-12V
Contextual Info: JANSR2N7401 H A R R IS S E M I C O N D U C T O R Formerly FSS234R4 August 1998 File Number 4571 Features 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET • 6A , 2 50V , rp5^oN = 0 .6 0 0 £ i T h e D iscrete Products O peratio n of H arris S em ico n du cto r

1E14

Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3 relay 12v 200 ohm Rad Hard in Fairchild for MOSFET
Contextual Info: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

s237 2.5 m

Abstract: TA-228 FSS237 S237
Contextual Info: Ordering number:ENN6149 N-Channel Silicon MOSFET FSS237 Load Switching Applications Features Package Dimensions • Ultralow ON resistance. · 2.5V drive. unit:mm 2116 [FSS237] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source 2 : Source 3 : Source

1E14

Abstract: 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3
Contextual Info: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event