FSF254R Search Results

Contextual Info: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs e 1998 Features Description • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

1E14

Abstract: 2E12 FSF254R4 JANSR2N7407 Rad Hard in Fairchild for MOSFET TRANSISTOR 187
Contextual Info: JANSR2N7407 Data Sheet [ /Title JANS R2N74 07 /Subject (Formerly Available As FSF25 4R4, Radiation Hardened, SEGR Resistant, N-Cha nnel Power MOSFETs) /Autho r () /Keywords (FSF2 54R4, Radiation Hardened, SEGR Resistant, N-Cha Formerly Available As FSF254R4,

Contextual Info: a h a r r is S E M I C O N D U C T O R FSF254D, FSF254R " J " m * • ■ Radiation Hardened, SE G R Resistant N-Channel Power M OSFETs june 1997 F e a tu re s Package • 18A, 250V, rDS ON = 0.170i2 • Total Dose - Meets Pre-Rad Specifications to 100kRAD(Si)

Contextual Info: JANSR2N7407 Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSF254D FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3 ic 356
Contextual Info: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

fsf254

Abstract: MIL-S-19500 1E14 2E12 FSF254D FSF254R
Contextual Info: S E M I C O N D U C T O R FSF254D, FSF254R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 18A, 250V, rDS ON = 0.170Ω • Total Dose - Meets Pre-Rad Specifications to 100kRAD(Si) • Single Event - Safe Operating Area Curve for Single Event Effects

1E14

Abstract: 2E12 FSF254R4 JANSR2N7407
Contextual Info: JANSR2N7407 Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

250JIS

Contextual Info: GBü à ttm FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 18A, 250V, rDS 0N = 0.170Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs

FSF254D

Abstract: 1E14 2E12 FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3
Contextual Info: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: JANSR2N7407 S em iconductor Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 1998 File N um ber 4636 Features • 18A, 250V, rog oi\| = 0.170Q • Total Dose The Discrete Products Operation of Harris Semiconductor

MOSFETS

Abstract: Power MOSFETs
Contextual Info: RH SEGR MOSFETs PAGE TECHNICAL ASSISTANCE. 2 LINE CARDS Radiation Hardened MOSFETs, MegaRAD Series.

Contextual Info: hS E M aI C O rN DrU Ci TsO R "F S F 2 5 4mD J, F m S F u 2 5 4 a mR m Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 18A, 250V, rDS ON = 0.170£1 TO-254AA • Total Dose - M eets Pre-Rad Specifications to 100kRAD(Si) • Single Event

Power MOSFET Selection Guide

Abstract: TO-205AF Package
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF

MOSFET Selection Guide

Abstract: TO257AA t0-205af TO254AA FSj264
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: