FQPF50N06 Search Results
FQPF50N06 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FQPF50N06 | Fairchild Semiconductor | 60V N-Channel MOSFET | Original | 643.56KB | 8 | ||
| FQPF50N06L | Fairchild Semiconductor | 60 V Logic N-Channel MOSFET | Original | 679.02KB | 8 |
FQPF50N06 Price and Stock
Fairchild Semiconductor Corporation FQPF50N06L32.6 A, 60 V, 0.025 OHM, N-CHANNEL, SI, POWER, MOSFET |
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FQPF50N06L | 326 |
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Fairchild Semiconductor Corporation FQPF50N06 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQPF50N06 | 84 |
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FQPF50N06 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
FQPF630
Abstract: FQPF14N30 FQPF7N80 FQPF FQPF6N50 FQPF19N10 FQPF19N10L FQPF19N20 FQPF19N20L FQPF20N06L
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o-220ffqpf65n06fqpf50n06fqpf30n06l+13 | |
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Contextual Info: QFET TM FQPF50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqpf50n06 | |
FQPF50N06Contextual Info: QFET TM FQPF50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqpf50n06 | |
FQPF50N06LContextual Info: QFET TM FQPF50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqpf50n06l | |
30100S
Abstract: FQPF50N06
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fqpf50n0630100s | |
FQPF50N06LContextual Info: FQPF50N06L April 2000 QFET TM FQPF50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqpf50n06l | |
fqpf50n06Contextual Info: QFET N-CHANNEL FQPF50N06 FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ. • Extended Safe Operating Area |
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fqpf50n06o-220f | |
fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14 | |
FDC6331
Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
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2n70022n7002mtfbs170bss123+16 | |
thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
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thermistor ksd201irf power mosfets catalogcomplementary mosfets buz11bzx85c6v8 spice model+6 | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14f155-6af155-10af165-15a+11 | |
FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
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sc70-6sc75-6supersottm-3/sot-23power247tm+10 | |
FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
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uf4003uf4004uf4005uf4006+16 | |
fqpf50n06Contextual Info: QFET N-CHANNEL FQPF5N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ. • Extended Safe Operating Area |
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fqpf5n60o-220ffqpf50n06 | |
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
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ao4405ao4407ao4408ao4409+16 | |
IRFS630A
Abstract: IRFS634A SSS7N60B SSS2N60B FQPF11P06 FQPF13N10 SSS7N60B equivalent IRFS614B SSS10N60b fqpf16n15
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o-220ffqpf85n06fqpf65n06fqpf55n06+15 | |
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
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sc70-6ot-23fdr8321lfdr8521l+13 | |
MC0628R
Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
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st42091f50188enb5f00974abt646cmsa+16 | |
MC0628R
Abstract: 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE
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scyb017at74alvc3237474cbtlv16211sn74cbtd16211+14 | |
thermistor KSD201
Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
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ts-16949iso-14001thermistor ksd201pin configuration npn transistor bc548+8 | |
FQPf10N60C
Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
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fdz201nfdz209nfdz2553nfdz2553nz+16 | |
fqp60n06
Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14 | |