ESAB82M Search Results

ESAB82M-004

Abstract: ccd120 WA3T
Contextual Info: ESAB82M-004 5 a è±/J'i *^ ì - k 5sa% y H r — ' * l) 7 ÿ 4 ‘ Outline D raw ings K SCHOTTKY BARRIER DIODE 4 .5 MAX. 2.0 o -o U z : Features JEDEC SC-67 EIAJ Insulated package by fully m o ld in g . • 1&VF • Low VF fcT-K C onnection Diagram Super high speed sw itching.

Contextual Info: ESAB82M004 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)103# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)2.0

Schottky Diode 40V 5A

Abstract: ESAB82M-004
Contextual Info: ESAB82M-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0 ±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC Insulated package by fully molding Low VF EIAJ Super high speed switching

ESAB82M-006

Contextual Info: ESAB82M -006 5A SCHOTTKY BARRIER DIODE Features Insulated package by fully m o ld in g , • teV p Low Vi. Connection Diagram • 7 ,' iv T ' s V * Super high speed sw itchin g. • 7 V —t - High reliability by planer design. ! Applications High speed pow er sw itchin g.

Contextual Info: ESAB82M006 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)103 V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.60 V(FM) Max.(V) Forward Voltage580m @I(FM) (A) (Test Condition)2.0

al360

Abstract: AL 360 ESAB82M-006
Contextual Info: ESAB82M-006 5A ' >3 ,y | ' +— K : O u tlin e D ra w in g s SCHOTTKY BARRIER DIO DE F e a tu r e s Insulated package by fully m o ld in g , • ifeVp Low Vi. iflVC C o n n e c tio n D ia g ra m Super high speed sw itch in g . • 7 V —J— High reliability by planer design.

ESAB82M-006

Contextual Info: ESAB82M -006 5A SCHOTTKY BARRIER DIODE Features Insulated package by fully m o ld in g , • teV p Low Vi. Connection Diagram • 7 ,' iv T ' s V * Super high speed sw itchin g. • 7 V —t - High reliability by planer design. ! Applications High speed pow er sw itchin g.

schottky diode 60V 5A

Abstract: ESAB82M-006 5A60V ESAB82M006
Contextual Info: ESAB82M-006 5A (60V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0 ±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC Insulated package by fully molding Low VF EIAJ Super high speed switching

Contextual Info: ESAB82M-004 5A '> a"A ^ r—' t y J ’ ÿ ' i ' t — K SCHOTTKY BARRIER DIODE : Features Insulated package by fully m o ld in g . m n m & tin C onnection Diagram Low V F Su p er high speed switching. r > High reliability by planer design, i : A pplications

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

SE024

Abstract: ERB12 ESAD81-004 se014 ERA1506 ERB30 ESAB82M-006 esac6 ERD03-04 SE036
Contextual Info: COLLMER SEMICONDUCTOR INC MÖE D me, dddisôi Schottky/General Purpose Diodes " P ICOL <S o \ ~ \ J > Schottky “Quick Reference” Selection Guide PACKAGE SURFACE MOUNT S I N G L E AXIAL TO-220 TO-3P F-PACK Full Mold Package PACKAGE SURFACE MOUNT D U A

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

ESAB82-004

Abstract: ESAB82M-004 ESAB82M-006 ESAB85-009 KP823C04 KS823C04 TP801C04 TP801C06 YG801C04 YG801C06
Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Type M axim um ratin§ V lo rrm Volts KS823C04 40 KP823C04 40 40 If s h # 2 *1 Am ps. Am ps. 5.0 Tc=87°C 5.0 Tc=87°C) 5.0 Tc=103°C) Therm al rating Tj and Tstg °c -40 t o +125 Characteristics Ta=25°C)

ERC24-06

Abstract: ERA21-06 ERA18 era-84 ERA15-04 ESAD75-02 ERC24-04
Contextual Info: V -V F U J I M IN I AXIAI. DIODI? S E R IE S T PLAN General purpose D iode T Y P lì -~ FRD FRD SOD Low loss FRD FRD FRD ZENER n FRA15-01 ERA15-02 ERA15-04 MM 15-06 ERA15-08 ERA15-10 BRA-18-02 ERA48-04 100 V 200 200 400 EIÏA22-02 ERA22-04 ERA22-0G ERA22-08

ESAD81

Abstract: ESAC6 erb12 ESAD81-004 era-84 SCHOTTKY -004
Contextual Info: SCHOTTKY & GENERAL PURPOSE DIODES Schottky “Quick Reference” Selection Guide PACKAGE 45 VOLT Part Number lo A Pkg. M OUNT SC802-04 1 20 AXIAL ERA82-004 ERA83-004 E R A 8 1-004 ERB81 -004 ERB83-004 ERC81 -004 ERC81S-004 0.6 1 1 2 2 3 5 TO -220 ERC80-004

Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

ESAD81-004

Abstract: SE024 ESAD81 ESAC6
Contextual Info: Schottky-Barrier Diodes Dual package • 25307^2 oogiei^ ? ■ r-^3-07 collmer semiconductor INC 2se j> •¿3- Û ? Ratings and characteristics Maximum ratings lo “ V rrm Volts Amps. Type Thermal ratings I fsm * 2 Tj and Tstg Amps, •c I rrm * 3 Max. mA

010sc4m

Abstract: C120H04Q SOT227B S10SC3M s0241 C8P04Q C8P03Q BYV223V45 20/010SC4M
Contextual Info: SCHOTTKY RECTIFIERS Item Number Part Number 10 Max A VRRM IFSM (V) (A) VF IF Max @ Test (V) (A) Package Style Schottky Rectifiers, General-Purpose (Co nt' d) 5 10 SOHQ030 SOHQ035 0120SC4M SOHQ045 151MQ30 151MQ40 0180SC3M 0180SC4M 0240SC3M 0240SC4M 03S0SC3M

erc24-06

Abstract: ERB06-15 ERC47-02 ERA91-02 erc24 ERC2406 ESAD81-004 ERA18-02 ERB29-04 ERC24-04
Contextual Info: This Material Copyrighted By Its Respective Manufacturer Fast R eco very D iodes S ingle psckage • 223ñ7^2 0001271 s ■ r-oh-oi collmer semiconductor inc ese » Ratings and characteristics Thermal ratings Ifsm * 2 Tj and Tstg Amps. •c Characteristics Te1 = 25 -0

ESAB82M-004

Contextual Info: E S A B 8 2 M - 4 5 a è ± / J ' i * ^ ì - k ‘ Outline Drawings SCHOTTKY BARRIER DIODE 0.4-1 1-2.7 I t t A : Features JEDEC Insulated package by fully m olding. SC-67 EIAJ >1&VF Low V F * Connection Diagram XfcT-K Super high speed switching. High reliability by planer design.

LT GBL406

Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
Contextual Info: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA

5A schottky

Contextual Info: ES AB82 M - 006 5a g ± 'J : Outline D raw ings SCHOTTKY BARRIER DIODE F e a tu re s • El1 iJtt11 ftit£ t l tz 7 )\>=E ' — )\> K ? -f- f Insulate d pa ckage by fu lly m o ld in g • i&Vp iwc Low V r C onnection Diagram S u p e r h ig h speed s w itc h in g .

SE024

Contextual Info: C O L L ME R S E M I C O N D U C T O R INC MAE D 22367*12 D D O I SÔ I 74fl « C O L Schottky/General Purpose Diodes € " P o\~\J> Schottky “Quick Reference” Selection Guide PACKAGE S I N G L E lo A Pkg. SURFACE MOUNT SE014 SC802-04 1 1 AXIAL ERA82-004