DSF8045SK Search Results

Contextual Info: DSF8045SK DSF8045SK Fast Recovery Diode Advance Information Replaces January 2000 version, DS4150-6.0 DS4146-7.0 June 2004 KEY PARAMETERS VRRM 4500V IF AV 430A IFSM 3500A Qr 440µC trr 3.07µs APPLICATIONS • Snubber Diode For GTO Applications FEATURES ■ Double side cooling

Contextual Info: DSF8045SK DSF8045SK Fast Recovery Diode Advance Information Replaces January 2000 version, DS4150-6.0 DS4146-7.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 430A IFSM 3500A Qr 440µC trr 3.07µs • Snubber Diode For GTO Applications FEATURES ■ Double side cooling

1000A 100V power diode

Abstract: DSF8045SK DSF8045SK40 DSF8045SK41 DSF8045SK42 DSF8045SK43 DSF8045SK44 DSF8045SK45
Contextual Info: DSF8045SK DSF8045SK Fast Recovery Diode Advance Information Replaces March 1998 version, DS4150-5.6 DS4146-6.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 430A IFSM 3500A Qr 440µC trr 3.07µs • Snubber Diode For GTO Applications FEATURES

Contextual Info: JULY 1996 DSF8045SK ADVANCE ENGINEERING DATA DS4150-5.5 DSF8045SK FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 430A IFSM 3500A Qr 440µC trr 3.07µs • Snubber Diode For GTO Applications. FEATURES ■ Double side cooling. ■ High surge capability.

Contextual Info: M ITEL DSF8045SK Fast Recovery Diode SEMICONDUCTOR Supersedes July 1996 version, DS4150 - 5.5 DS4150 - 5.6 APPLICATIONS • March 1998 KEY PARAMETERS v RRM 4500V 430A Jf AV 3500A FSM 440(lC Q r S nubber Diode For GTO Applications. 3.07(iS FEATURES ■

Contextual Info: Si GEC PLESSEY S E M I C O N D U C T O R S DS4150-5.5 DSF8045SK FAST RECOVERY DIODE KEY PARAMETERS 4500V ^BRM 430A Jf AV 3500A U m 440|iC Or 3.07|is K APPLICATIONS • Snubber Diode For G TO Applications. FEATURES ■ Double side cooling. ■ High surge capability.

DSF8045SK

Abstract: DSF8045SK45 1000A 100V power diode DSF8045SK40 DSF8045SK41 DSF8045SK42 DSF8045SK43 DSF8045SK44
Contextual Info: DSF8045SK DSF8045SK Fast Recovery Diode Advance Information Replaces January 2000 version, DS4150-6.0 DS4146-7.0 June 2004 KEY PARAMETERS VRRM 4500V IF AV 430A IFSM 3500A Qr 440µC trr 3.07µs APPLICATIONS • Snubber Diode For GTO Applications FEATURES ■ Double side cooling

DSF8045SK

Contextual Info: DSF8045SK DSF8045SK Fast Recovery Diode Advance Information DS4146-8 July 2014 LN 31792 APPLICATIONS KEY PARAMETERS VRRM 4500V IF(AV) 430A IFSM 3500A Qr 440µC trr 3.07µs • Snubber Diode For GTO Applications FEATURES ■ Double side cooling ■ High surge capability

Contextual Info: @ M ITEL DSF8045SK Fast Recovery Diode SEMICONDUCTOR Supersedes July 1996 version, DS4150 - 5.5 D S 4 1 5 0 -5 .6 APPLICATIONS March 1998 KEY PARAMETERS v RRM 4500V 430A Jf AV 3500A FSM 440|lC Q r 3.07|is trr • Snubber Diode For GTO Applications. FEATURES

DSF8045SK

Abstract: DSF8045SK40 DSF8045SK41 DSF8045SK42 DSF8045SK43 DSF8045SK44 DSF8045SK45
Contextual Info: DSF8045SK DSF8045SK Fast Recovery Diode Advance Information Replaces March 1998 version, DS4150-5.6 DS4146-6.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 430A IFSM 3500A Qr 440µC trr 3.07µs APPLICATIONS • Snubber Diode For GTO Applications FEATURES

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DYNEx

Abstract: DG306AE
Contextual Info: Part and Ordering Number = vDBM/ioo v DR„ v RRM @ T„ ^DRM @ T VJ ^T AV *TCM @ C s @ T V] ^T(RMS) ^TSM @ T yj @ T VJ ^TM (V) (V) (mA) (A) (A) (^F) (A) (kA) DGT304SE* 1300 16 25 250 700 2 390 4 2.2 DG306AE* 2500 16 50 225 600 1 350 3.5 DG406BP* 2500

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

DCR370T

Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches

GTO 100A 750V

Abstract: GTO gate drive unit dc-dc GTO 100A and 750V Gate Turn-off 100A 750V GTO 100A and 750V GTO 750V 100A GTO thyristor 100A, 2000V DG858DW45 DS4334-4 dvd motor
Contextual Info: DG858DW45 DG858DW45 Gate Turn-Off Thyristor Replaces July 1999 version, DS4334-4.0 DS4334-4.1 May 2000 FEATURES KEY PARAMETERS ITCM 3000A VDRM 4500V IT AV 1100A dVD/dt 750V/µs dIT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability

DG858DW45

Abstract: DG858DW
Contextual Info: DG858DW45 DG858DW45 Gate Turn-Off Thyristor DS4334-5 July 2014 LN31737 FEATURES KEY PARAMETERS ITCM 3000A VDRM 4500V IT(AV) 1100A dVD/dt 750V/µs dIT/dt 300A/µs ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability ● Fault Protection Without Fuses

M779b

Abstract: M771 bsr55 DYNEx
Contextual Info: Part and Ordering Number VRRM IRRM @TV ^R M S ) @ Tc = 65C 65’C UsM l2t @Tv) @Tvj vTO @Tvj rT @Tv, p th J-c) p th(c-hs) Tv, (V) (mA) (A) (A) (kA) (A2sx103) (V) (mü) (°C/W) (°C/W) CC) ESM4120* DF451 * 600-1000 600-1600 100 100 334 295 565 543 4.5 3.5

MP02X

Abstract: DCR10 DYNEX DG648 DCR1596SW DIM200PHM33
Contextual Info: a lp h a n u m e r ic p a r t lis t Part No. ACR300SG ACR400SE ACR44U DCR1002SF DCR1003SF DCR1006SF DCR1008SF DCR1020SF DCR1021SF DCR1374SBA DCR1375SBA DCR1376SBA DCR1474SY DCR1475SY DCR1476SY DCR1478SY DCR1574SY DCR1575SY DCR1576SY DCR1594SW DCR1595SW DCR1596SW

DCR2950W

Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half