M771 Search Results

m7839

Abstract: M9344 M7714 M9343 M9347 M8099 M7272 M8-2411 2411 t1 M7715
Contextual Info: P art Number .130 MAX. .380 MAX. .250± .020 .050 Design V oltage A mps MS C P L ife Hours F ilament T ype C M7272 C M7274 5.0 5.0 .075 .115 .090 .150 16,000 16,000 C -2R C -2R C M7680 C M7683 C M7714 C M7715 5.0 5.0 5.0 5.0 .060 .060 .075 .115 .030 .050 .090

M9344

Abstract: m9343 m7839 M7272 M9347 2411 t1 M9388
Contextual Info: P art Number .130 MAX. .380 MAX. .250± .020 .050 Design V oltage A mps MS C P L ife Hours F ilament T ype C M7272 C M7274 5.0 5.0 .075 .115 .090 .150 16,000 16,000 C -2R C -2R C M7680 C M7683 C M7714 C M7715 5.0 5.0 5.0 5.0 .060 .060 .075 .115 .030 .050 .090

Contextual Info: JANUARY 1996 DF452 DS4213-3.1 DF452 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 1600V IF AV 540A IFSM 5000A Qr 35µC trr 3.2µs • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification.

marking YB SOT89

Abstract: PL-019
Contextual Info: Surface Mount W! NE Monolithic Amplifier 50Ω, Broadband, DC to 4 GHz GAL-55 Features • • • • • • InGap HBT microwave amplifier miniature SOT-89 frequency range, DC to 4 GHz, usalbe to 6 GHz up to 15.0 dBm typ. output power excellent package for heat dissipation, exposed metal bottom

Contextual Info: I S^C D I 7 CÌ2<:1237 aQD5131 T S G S-THOMSON T 3. O 59C 02131 tH Ù M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS D ' Y - 6J- i l B Y T 12-200 — 400, R F A S T R E C O V E R Y R E C TIFIER REDRESSEUR R A PID E ADVANCE INFORMATION .

2748

Abstract: KBA-40 m7713
Contextual Info: NE W! BLUE CELL Frequency Doubler KBA-40 2.7 to 4.8 GHz Features • low conversion loss, 12.3 dB typ. • solder plated leads for strain relief and excellent solderability Applications • synthesizers • local oscillators Electrical Specifications MODEL

Contextual Info: ESM4120 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4141 - 3.3 DS4141 - 3.4 March 1998 KEY PARAMETERS VRRM 1000V 334A Jf AV 4000A FSM 15(lC Q, APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ Inverters And C hoppers.

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

M771

Abstract: DF451 sine wave ups designing
Contextual Info: DF451 DF451 Fast Recovery Diode Replaces January 2000 version, DS4142-5.0 DS4143-6.0 June 2004 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs APPLICATIONS

AN4506

Abstract: AN4839 AN4853 DF451 M771
Contextual Info: DF451 DF451 Fast Recovery Diode Replaces March 1999 version, DS4142-4.0 DS4143-5.0 January 2000 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge KEY PARAMETERS VRRM 1600V IF AV 295A IFSM 3500A Qr 25µC trr 1.22µs Applications

ESM4120

Abstract: M771
Contextual Info: ESM4120 ESM4120 Fast Recovery Diode Advance Information Replaces March 1998 version, DS4141-3.4 DS4141-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 1000V IF AV 334A IFSM 4000A Qr 15µC trr 0.8µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

222SG

Abstract: ups rectifier
Contextual Info: 1 S G S-THOMSON SIC D • 7 C12C1237 □□□Elää fc, o 1 H O M S O N -C S F B DIVISION SEMICONDUCTEURS DISCRETS Y T 7 2 0 0 , , r , 5 . - U 6 0 0 . R / ' O l J V W 1 FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES Formely number ESM 675

CB-33

Contextual Info: I 7=12^237 QQD2351 2 S G S-THOMSON 59C 02351 O D 7^ o 17 ' R T 5 . 1 T H O M S O N -C S F F 1 - * , 8 D IV IS IO N S EM IC O N DUCTE UR S DISCRETS E S M 7 G ü ^ a H IG H E F F IC IE N C Y FA ST R E C O V E rtV R E C T IF IE R S SUPERSWITCH REDRESSEURS R A PIDES A H A U T R E N D E M E N T

aval

Contextual Info: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT

Contextual Info: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T

PAS 1066

Contextual Info: THOMSON 0 0 Ü 2 C I5 L T O T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS 59C 02056 _ 0" _ ' - û ^ _ / 7 1 l \ l 3 B 7 ^ K l O O O G 9 , C O R 1 f % ^ 1 1 X 1 3 8 8 3 , ^ 1 SUPERSW ITCH FAST RECOVERY RECTIFIERS DIODES D E RED R ESSEM EN T RAPID ES

BYT 45 J

Abstract: stc 8000 h
Contextual Info: 1 5^0 D I 7TETE37 0002101 3 S G S-THOMSON Q 59C 02181 T H O M S O N -C S F B 0 7 ^ 0 3 “/7 Y T 6 5 . 6 5 B DIVISION SEMICONDUCTEURS DISCRETS SUPERSW ITCH 6 _ ^ 1 , C R HIGH VOLTAGE FAST RECOVERY RECTIFIERS R E D R ESSEU R S RA PID ES H AU TE TENSION HIGH VOLTAGE

Contextual Info: G S-THQ M SQ N S ÌC D | OGOaOET fl 7 ^ 2 3 7 V THOMSON-CSF C H IP S u ltra-fast recovery rectifier chips pastilles de diodes de redressement ultra-rapide Types >0 A v R flU Vf # ' f = «o m u. *FSU 10 IT* (V) (A) 'R 'V fW M 25*C max. (jlA) V r* OifW lPOOÎ

Contextual Info: DF452 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4213 - 3.1 DS4213 - 3.2 March 1998 KEY PARAMETERS V RRM 1600V 540A Jf AV 5000A FSM 35|lC Q, APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ Inverters And C hoppers.

Contextual Info: MITEL DF252 Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4142 - 3.3 DS4142 - 3.4 KEY PARAMETERS V RRM 1600V 360A Jf AV 3000A FSM 35|iC Q, 3.2|is APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ March 1998 Inverters And Choppers.

Contextual Info: ESM4120 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4141 - 3.3 DS4141 - 3.4 KEY PARAMETERS V RRM 1000V 334A J f A V 4000A FSM 15|lC Q, 0 .8 |is APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ March 1998

Contextual Info: DFS454 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes Septem ber 1995 version, DS4145 - 3.3 DS4145 - 3.4 KEY PARAMETERS V RRM 2500V 365A Jf AV 3500A FSM 200|iC Q, APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ March 1998 Inverters And Choppers.

DF451

Contextual Info: DF451 DF451 Fast Recovery Diode  FEATURES • Double Side Cooling ■ High Surge Capability