|
GT30J110SRA
|
|
Toshiba Electronic Devices & Storage Corporation
|
IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
|
|
|
TLP5702H
|
|
Toshiba Electronic Devices & Storage Corporation
|
Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
|
|
|
TLP5705H
|
|
Toshiba Electronic Devices & Storage Corporation
|
Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
|
|
|
7UL1G07FU
|
|
Toshiba Electronic Devices & Storage Corporation
|
One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC |
|
|
|
TK3R3E08QM
|
|
Toshiba Electronic Devices & Storage Corporation
|
MOSFET, N-ch, 80 V, 120 A, 0.0033 Ohm@10V, TO-220AB |
|
|
|
TK110E65Z
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220, DTMOS |
|
|
