1400V Search Results

Contextual Info: 2-Pack IGBT 1400V 300A 2MBI 300P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications

ultrasonic generator 40khz

Abstract: GATE ASSISTED TURN-OFF THYRISTORS ultrasonic generator 1200 w 40khz 40KHZ ULTRASONIC asymmetric thyristor asymmetric thyristor datasheet DF451 TA329 RC snubber diode TA32910Q
Contextual Info: TA329.Q TA329.Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 KEY PARAMETERS VDRM 1400V IT RMS 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs APPLICATIONS • High Frequency Applications

TS2422

Abstract: GS12 TS20 TS22 TS24 TS27 T510S
Contextual Info: Click on outline no. Fast Thyristors Type continued ITRMSM A VDRM VRRM V VDSM = VDRM VRSM = VRRM +100V up to 1400V continued T 408 F 1000.1300* I/TSM kA 10 ms Tvj max VT/IT V/kA Tvj max V TO V(TO) Tvj = Tvj max rT mΩ Tvj = Tvj max (di/dt)cr A/µs DIN

Contextual Info: JANUARY 1996 TF915.B DS4279-2.1 TF915.B FAST SWITCHING THYRISTOR APPLICATIONS KEY PARAMETERS 1400V VDRM 1700A IT RMS 20000A ITSM dV/dt 300V/µs dI/dt 500A/µs 30µs tq • High Power Inverters And Choppers. ■ UPS. ■ Railway Traction. ■ Induction Heating.

IXTT12N140

Abstract: IXTH12N140
Contextual Info: Advance Technical Information IXTT12N140 IXTH12N140 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1400V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: 2-Pack IGBT 1400V 100A 2MBI 100PC-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications

a600g

Contextual Info: 2-Pack IGBT 1400V 150A 2MBI 150P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications

IC12V

Contextual Info: 2-Pack IGBT 1400V 100A 2MBI 100P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications

866a RECTIFIER

Abstract: AN4839 DS502ST DS502ST09 DS502ST10 DS502ST11 DS502ST12 DS502ST13 DS502ST14
Contextual Info: DS502ST DS502ST Rectifier Diode Replaces January 2000 version, DS4794-3.0 DS4794-4.0 October 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 1400V ■ High Surge Capability IF AV 866A IFSM APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control

75P-140

Abstract: 2mbi 2MBI 75P-140
Contextual Info: 2-Pack IGBT 1400V 75A 2MBI 75P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications • High Power Switching

Contextual Info: AUGUST 1995 DS402ST DS4183-2.2 DS402ST RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 1400V VRRM 505A IF AV 5600A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

a431-4a

Contextual Info: 3 M Ä « H A 4 3 1 4 , H A 4 3 1 4 A W i d e b a n d , 4 x 1 V id e o juiy 1995 C r o s s p o in t S w itc h F eatu re s D e s c rip tio n • Lo w P o w er D is s ip a tio n . 105m W • S y m m e tric al S le w R a t e s . 1400V /p s

IN75

Abstract: MAX4142 MAX4142ESD MAX4144 MAX4147
Contextual Info: 19-4763; Rev 0; 7/98 KIT ATION EVALU E L B A AVAIL 250MHz, Low-Power, High-Output-Current, Differential Line Driver _Features ♦ 250MHz -3dB Bandwidth AV = +2V/V ♦ 1400V/µs Slew Rate ♦ 67dB at 10MHz CMR ♦ 0.01%/0.01° Differential Gain/Phase

Contextual Info: DS502ST M ITEL Rectifier Diode SEMICONDUCTOR Supersedes Novem ber 1997 version, DS4794 - 2.3 DS4794 - 2.4 March 1998 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. KEY PARAMETERS v RRM 1400V 540A Jf AV 8000A

Contextual Info: 7.50 + 0.25 3.50 + 0.10 Wm 3.70 + 0.25 Circuit 1 S P E C IF IC A T IO N S C urrent Rating: 1A AC,DC Voltage Rating: 1400V AC,DC Tem perature Range: —25”C ~ + 8 5 ‘ C C ontact Resistance: 10mQ Max Insulation Resistance: 1000MQ Min W ithstanding Voltage: 3800V A C /m in u te

Contextual Info: VCES = IC90 = VCE sat ≤ tfi(typ) = IXSH35N140A High Voltage High speed IGBT Short Circuit SOA Capability 1400V 35A 4.0V 200ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1400 1400

SOD-57

Abstract: BYV36G
Contextual Info: BYV36G SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 1400V CURRENT: 1.5A FEATURE SOD-57 Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability MECHANICAL DATA

Contextual Info: BC Pro 1400VA Tower Standby 120V UPS with USB port Highlights 1400VA / 1.4kVA tower 120V standby UPS MODEL NUMBER: BCPRO1400 Maintains AC output during power failures USB port, Front panel status LEDs, 96% efficient NEMA 5-15P input plug and 6 NEMA 5-15R outlets

TO-220F1

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD C6084 NPN SILICON TRANSISTOR SWITCHING REGULATOR APPLICATIONS 1 1 TO-220  TO-220F FEATURES * High Speed. * High Breakdown Voltage VCBO=1400V . * High Reliability. 1 1 TO-126 1 TO-3P 1 TO-263 TO-220F1 1 TO-220F2  ORDERING INFORMATION

CM400HA-28H

Abstract: CM75 IR module transistor 800v CM1000HA-28H CM100TF-28H CM200DY-28H CM300DY-28H CM50 CM600HA-28H
Contextual Info: SWITCHING ENERGY 1400V CLASS H-SERIES IGBT MODULE 102 101 TURN-ON 100 100 100 101 102 COLLECTOR CURRENT, IC AMPERES 103 TURN-OFF SWITCHING, ESW (mJ/PULSE) CM1000HA-28H CM600HA-28H CM400HA-28H CM200DY-28H 101 CM75*-28H CM50~1000-28H (IC = Ir /10~Ir) CM100TF-28H

DRD520T14

Abstract: DRD520T
Contextual Info: DRD520T14 Rectifier Diode DS5990 – 1 March 2011 LN28176 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 1400V 520A 5900A VOLTAGE RATINGS Part and Ordering Number DRD520T14 DRD520T12 DRD520T10 DRD520T08 DRD520T06

DRD3220X14

Contextual Info: DRD3220X14 Rectifier Diode DS5994 – 1 March 2011 LN28180 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 1400V 3220A 35800A VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VRRM V DRD3220X14 DRD3220X12

300A thyristor gate control circuit

Abstract: DCR504ST DCR504ST10 DCR504ST11 DCR504ST12 DCR504ST13 DCR504ST14 DS4448
Contextual Info: DCR504ST DCR504ST Phase Control Thyristor Advance Information Supersedes January 2000version, DS4448 -4.0 DS4448 -5.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 1400V IT AV 456A ITSM 6800A dVdt 1000V/µs dI/dt 700A/µs ■ High Surge Capability

2MBI200PB-140

Abstract: dc ac inverter schematic igbt ac servo amplifier schematic 200A inverter IGBT 600V 200A 2MBI igbt module Power INVERTER schematic circuit M235 IGBT parallel
Contextual Info: 2MBI200PB-140 IGBT Module P-Series 1400V / 200A 2 in one-package Features • Small temperature dependence of the turn-off switching loss · Easy to connect in parallel · Wide RBSOA square up to 2 time of rated current and high shortcircuit withstand capability