DMN3030LSS Search Results

N3030LS

Abstract: N3030
Contextual Info: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V

N3030LS

Contextual Info: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = +25°C 18mΩ @ VGS = 10V 9.0A 30mΩ @ VGS = 4.5V 7.0A V(BR)DSS 30V •     Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

N3030

Abstract: N3030LS DS3126-1
Contextual Info: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V Low Gate Threshold Voltage

N3030LS

Abstract: DMN3030LSS
Contextual Info: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V

N3030LS

Abstract: N3030L
Contextual Info: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V

n3030ls

Abstract: DMN3030LSS DS31261 DMN3030LSS-13 J-STD-020D DS3126-1 N3030L
Contextual Info: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V Low Gate Threshold Voltage

N3030LS

Abstract: N3030l DMN3030LSS DMN3030LSS-13 J-STD-020D
Contextual Info: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V Low Gate Threshold Voltage

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE DMN3030LSS DMN3031LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 18.5mΩ @ VGS = 10V • 31mΩ @ VGS = 4.5V Low Gate Threshold Voltage

N3031LS

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE DMN3030LSS DMN3031LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 18.5mΩ @ VGS = 10V • 31mΩ @ VGS = 4.5V Low Gate Threshold Voltage

N3030L

Contextual Info: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 18m @ VGS = 10V • 30m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V

N3030LS

Abstract: DS3126-1 DS31261
Contextual Info: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V Low Gate Threshold Voltage

n3030ls

Abstract: DMN3030LSS n3030
Contextual Info: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

ALC271X

Abstract: alc271x audio rt8205e RT8205EGQW KB930 kb930qf KB930QF A1 ENE KB930QF A1 LA-6901P RTM890N-631-VB-GRT
Contextual Info: A B C D E Compal Confidential 1 Model Name : P5WE0 File Name : LA-6901P BOM P/N:43 1 Compal Confidential 2 2 P5WE0 M/B Schematics Document Intel Sandy Bridge Processor with DDRIII + Cougar Point PCH Nvidia N12P GS/GV 2010-08-11 3 3 REV:0.1 4 4 Issued Date

SBR20Q100CTP

Abstract: DMN55D DMC2400UV DMS2120LFWB DMN601DWK SBR20A100CT SBR30A50CT SBR10100CTB
Contextual Info: DATE: 8 August, 2012 PCN #: 2084 PCN Title: Qualification of Additional Wafer Fabrication Sources Dear Customer: This is an announcement of change s to products that are currently being

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

DMN62D4SDW-7

Abstract: ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N
Contextual Info: DATE: 29th April, 2013 PCN #: 2094 – Rev01 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (DTC) as an Additional Assembly & Test Site for SOP-8, SOT-23, SOT223, SOT-323, SOT-363, SSOT-23, and SOD-323 Packaged Parts,

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

AEC-Q101

Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
Contextual Info: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC

SBR2U30P1

Abstract: SBR02U100LP-7 DMS2120LFWB SBR1U150SA SBR20100CT SBR10100CTB
Contextual Info: PRODUCT CHANGE NOTICE Initial DCS/PCN-1144 Rev 00 Final Final Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: August 6, 2009 November 4, 2009 Discrete Semiconductors Additional Wafer Fab Sources PCN #:1144 REV 00 FINAL TITLE Qualification of additional wafer fabrication sources

Contextual Info: DATE: 25th April, 2013 PCN #: 2102 PCN Title: Device End of Life Dear Customer: This is an announcement of change s to products that are currently being offered by Diodes Incorporated.

zxczm800

Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
Contextual Info: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)