D1010 Search Results
D1010 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| RJMG2B300D1010R | Amphenol Communications Solutions | RJMG, Input output Connectors, 1G 1x1 without leds |
D1010 Datasheets (17)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| D1010 | Pixim | Video Imaging System For CCTV Cameras | Original | 140.11KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| D1010 | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 128.15KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| D1010 | Unknown | Semiconductor Devices, Diode, and SCR Datasheet Catalog | Scan | 61.19KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| D-101-00 | TE Connectivity | Cables, Wires - Management - Solder Sleeve - D-101-00 | Original | 75.51KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| D-101-00CS1290 | TE Connectivity | Cables, Wires - Management - Solder Sleeve - D-101-00CS1290 | Original | 75.51KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| D-101-00-RS | TE Connectivity Raychem Cable Protection | Cables, Wires - Management - Solder Sleeve - SOLDERSLEEVE | Original | 75.51KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| D1010UK | Semelab | METAL GATE RF SILICON FET | Original | 17.62KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| D1010UK | Semelab | Metal Gate RF Silicon FET | Original | 49.69KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| D1010UK | Semelab | GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W-28V-500MHz PUSH-PULL | Original | 78.17KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRD10100
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Shikues Semiconductor | Reverse Voltage: 40-200V, Forward Current: 10.0A, High current, Low forward voltage, High efficiency, High surge, Any mounting. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SBDD10100CT
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JCET Group | SBDD10100CT Schottky barrier rectifier with 100 V peak repetitive reverse voltage, 10 A average rectified output current, low forward voltage drop of 0.63 V at 125°C, and non-repetitive surge current of 5.0 A. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRD10100CT
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JCET Group | Schottky barrier rectifier diode in TO-252-2L plastic package, with 70V to 100V peak repetitive reverse voltage, 10A average rectified output current, low forward voltage drop, and high surge current capability up to 120A. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRD1010T
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Microdiode Semiconductor (MDD) | Original | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SBD10100SCTB
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JCET Group | SBD10100SCTB and SBDF10100SCTB Schottky barrier rectifiers feature 100 V reverse voltage, 10 A average rectified current, low forward voltage drop of 0.54 V at 125°C, and surge current capability of 150 A, housed in TO-220-3L/TO-220F packages. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SBD10100TCTB
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JCET Group | SBD10100TCTB and SBDF10100TCTB Schottky barrier rectifiers feature 100 V reverse voltage, 10 A average rectified current, low forward voltage drop of 0.63 V at 125°C, and surge current capability of 150 A, housed in TO-220-3L/TO-220F packages. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRD10100
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SUNMATE electronic Co., LTD | Schottky barrier rectifier diode with 10A average forward current, 40 to 200V peak reverse voltage, low forward voltage drop, high surge current capability, and operating temperature from -55 to +150°C, in TO-252 (D-PAK) package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SBD10100CT
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JCET Group | SBD10100CT and SBDF10100CT Schottky barrier rectifiers feature 100 V reverse voltage, 10 A average rectified current, low forward voltage drop of 0.63 V at 125°C, and 120 A peak surge current in a TO-220 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
D1010 Price and Stock
TE Connectivity D-101-00Connection Cable Solder Sleeve Shield Terminal Copper Blue Transparent 17.25mm Nickel |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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D-101-00 | 8,870 | 6 |
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| D-101-00 | 1,200 | 100 |
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D-101-00 | 8,870 | 28 Weeks | 1 |
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Buy Now | |||||
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D-101-00 | Bulk | 29,575 | 25 |
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D-101-00 | 21,643 |
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Get Quote | |||||||
Samtec Inc HLCD-10-10.00-TR-TR-1High Speed Hermaphroditic Cable, 0.50mm Pitch - Bulk (Alt: HLCD-10-10.00-TR-TR-1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HLCD-10-10.00-TR-TR-1 | Bulk | 4 Weeks, 5 Days | 1 |
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HLCD-10-10.00-TR-TR-1 | 1 |
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HLCD-10-10.00-TR-TR-1 |
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Samtec Inc HLCD-10-10.00-TRS-TD-1-T- Bulk (Alt: HLCD-10-10.00-TRS-TD-1-T) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HLCD-10-10.00-TRS-TD-1-T | Bulk | 1 |
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HLCD-10-10.00-TRS-TD-1-T | 1 |
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HLCD-10-10.00-TRS-TD-1-T |
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Taiwan Semiconductor MBRAD10100H10A, 100V, SCHOTTKY RECTIFIER - Tape and Reel (Alt: MBRAD10100H) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MBRAD10100H | Tape & Reel | 12 Weeks | 4,500 |
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MBRAD10100H | 1 |
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MBRAD10100H | 15 Weeks | 4,500 |
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Amphenol Corporation KD101050A000G- Bulk (Alt: KD101050A000G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KD101050A000G | Bulk | 2,100 |
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Buy Now | ||||||
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KD101050A000G | 16 Weeks | 2,100 |
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Get Quote | ||||||
D1010 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: bOE D SEMELAB • Ô1331Ô7 GDDD'ìPfl PLC Sb? «S flL B SEMELAB D1010UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 125W -28V-400M HZ PUSH-PULL M E C H A N IC A L D A TA Dimensions FEATURES • EXTRA LOW PIN1 SOURCE COMMON |
OCR Scan |
d1010uk-28v-400m300/is | |
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Contextual Info: SANGDEST MICROELECTRONICS SDUR/D10100CT Green Products Technical Data Data Sheet N1294, Rev. - SDUR/D10100CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode |
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sdur/d10100ctn1294 | |
D1010UKContextual Info: TetraFET D1010UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K |
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d1010uk500mhz | |
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Contextual Info: D1010UK Transistors N-Channel UHF/Microwave MOSFET V BR DSS (V)70 V(BR)GSS (V)20.0 I(D) Max. (A)20 P(D) Max. (W)350 Maximum Operating Temp (øC)200õ I(DSS) Min. (A) I(DSS) Max. (A)4.0m @V(DS) (V) (Test Condition)28.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.3.2 |
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d1010uk | |
D1010UK
Abstract: 064R UT85 UT85-15
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Original |
d1010uk500mhz25swgft50b-43+3 | |
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Contextual Info: mi TetraFET itti Nil SEM E D1010UK LAB METAL GATE RF SILICON FET MECHANICAL DATA G c 2 pis (typ) * p H D i (2 pis) !A T ▼ GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W - 28V -500MHz PUSH-PULL (4 pis) FEATURES T . T • SIMPLIFIED AMPLIFIER DESIGN |
OCR Scan |
d1010uk-500mhz | |
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Contextual Info: D1010 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)125Ï V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.130 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)25 |
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d1010current10voltage100stylestr-10 | |
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Contextual Info: Illl TetraFET E^E mi D1010UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 2 5 W - 28V -500 M H z PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS DR PIN 1 SOURCE COMMON |
OCR Scan |
d1010uk | |
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Contextual Info: TetraFET D1010UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN |
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d1010uk500mhz25swgft50b-43 | |
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Contextual Info: nil Vrr r = mi TetraFET SEM E D1010UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 2 5 W -2 8 V -5 0 0 M H z PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DR |
OCR Scan |
d1010uk | |
D1010UKContextual Info: TetraFET D1010UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K |
Original |
d1010uk500mhz | |
064R
Abstract: D1010UK UT85 UT85-15
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Original |
d1010uk500mhz25swgft50b-43+3 | |
IRIS drive control
Abstract: Pixim transistor D1020 CMOS image sensor PAL video iris iris control cmos NTSC IMAGE SENSOR 0.18 um CMOS auto iris control DC IRIS
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d1000d1010pb-d1000-2003-10iris drive control+9 | |
UT85 50
Abstract: UT85 coax 064R D1009UK D1010UK UT85 UT85-15
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d1010uk500mhz2-18pf680pf+6 | |
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Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. STUD SIZE PANDUIT DIMENSIONS PART # ENGLISH -#6 #6 #8 #10 #10 -1/4" PMN2-3F PN14-6FN PN14-6F PN14-8F PN14-10F PN14-10FN PMN2-5F PN14-14F |
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pn14-6fnpn14-6fpn14-8fpn14-10f+6 | |
MS25036
Abstract: CP-861 MS25036-157
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ms25036-111pn10-8rms25036-156pn10-10r+9 | |
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Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. B PANDUIT PART NUMBER STUD SIZE PV22-2R #2 PV22-4R #4 PV22-6R #6 PV22-8R #8 PV22-10R #10 DIMENSIONS A .03 .01 W C .02 in. M .03 H |
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pv22-2rpv22-4rpv22-6rpv22-8r+5 | |
MS25036-153Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. PANDUIT PART # B STUD SIZE MILITARY PART # AND CLASS ENGLISH METRIC L DIMENSIONS .03 [0,8] W .01 [0,3] C in. [mm] .02 [0,5] M W .03 |
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pn14-4rpn14-6rms25036-107pn14-6rn+7 | |
WD10C20-05
Abstract: WD2010 WD1010 wd10c20 controller st506 C110 disk drive read write amplifier
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OCR Scan |
wd10c20-05st506/st412wd1010/wd2010+6 | |
M83519
Abstract: MIL-S-83519 Raychem installation procedure rcps-100-70 SAE-AS83519 raychem RPIP 655-00-D NAS1745 D-103-31 raychem rt-1404 RAYCHEM D-103-00 raychem solder sleeve d-142-51
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s02-18-rso63-3-55-26-90m83519/2-19s02-19-r+14 | |
ir911
Abstract: A14C A15C A25C A26C SN74ACT3631 SN74ACT3641 SN74ACT3651
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OCR Scan |
sn74act3641scas33sasn74act3631sn74act3651+6 | |
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Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. NOTES: 1. CONSTRUCTED TO MEET THE FOLLOWING STANDARDS: A. FEMALE M12 D-CODE END: IEC 61076-2-101 SCREW B. M12 TO RJ45: ANSI/TIA-568-C.2 |
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ansi/tia-568-c10/100mbitansi/tia/eia-568-cicam12drjs+5 | |
07N65
Abstract: fusible 1a SMD LN4148 10471 VARISTOR
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Original |
act51x2012-octact512pc817c+5 | |
EE16 12V
Abstract: SMD TRANSISTOR B7 EE16 transformer 5v 2.1a t1/epc17 TRANSFORMER smd transistor 12W 3 pins EE16-4 core transformer
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act41xact410act413epc17+10 | |